CMT01N60GN92 [CHAMP]
POWER FIELD EFFECT TRANSISTOR; 功率场效应晶体管
| 型号： | CMT01N60GN92 |
| 厂家： | 
CHAMPION MICROELECTRONIC CORP. |
| 描述： | POWER FIELD EFFECT TRANSISTOR |
| 文件： | 总8页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMT01N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
SYMBOL
TO-251
TO-252
TO-92
Front View
Front View
Front View
D
G
2
3
1
S
N-Channel MOSFET
2
3
1
2
3
1
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current － Continuous
－ Pulsed
Symbol
ID
Value
1.0
Unit
A
IDM
9.0
Gate-to-Source Voltage － Continue
－ Non-repetitive
VGS
VGSM
PD
±30
±40
V
V
Total Power Dissipation
W
TO-251/252
50
-55 to 150
20
Operating and Storage Temperature Range
TJ, TSTG
EAS
℃
Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃
(VDD = 100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25Ω)
Thermal Resistance － Junction to Case
mJ
θJC
θJA
TL
1.0
62.5
260
℃/W
－ Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
℃
2006/10/11 Rev. 1.6
Champion Microelectronic Corporation
Page 1
CMT01N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
CMT01N60N251
Package
TO-251
TO-252
TO-92
CMT01N60N252
CMT01N60N92
CMT01N60GN251*
CMT01N60GN252*
TO-251
TO-252
TO-92
CMT01N60GN92*
*Note: G : Suffix for Pb Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT01N60
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Symbol
Min
Typ
Max
Units
V(BR)DSS
600
V
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
IDSS
mA
0.1
0.3
100
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
IGSSR
nA
nA
V
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
100
4.0
8.0
Gate Threshold Voltage
VGS(th)
2.0
0.5
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) *
Forward Transconductance (VDS ≧ 50 V, ID = 0.5A) *
Input Capacitance
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
Ω
mhos
210
28
4.2
8
pF
pF
(VDS = 25 V, VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
f = 1.0 MHz)
pF
ns
ns
(VDD = 300 V, ID = 1.0 A,
VGS = 10 V,
21
18
24
8.5
1.8
4
ns
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
RG = 18Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Qg
14
nC
nC
(VDS = 400 V, ID = 1.0 A,
VGS = 10 V)*
Qgs
Qgd
LD
nC
nH
4.5
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
LS
7.5
nH
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
(IS = 1.0 A, VGS = 0 V,
Forward Turn-On Time
dIS/dt = 100A/μs)
VSD
ton
trr
1.5
V
**
ns
ns
Reverse Recovery Time
350
500
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
2006/10/11 Rev. 1.6
Champion Microelectronic Corporation
Page 2
CMT01N60
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2006/10/11 Rev. 1.6
Champion Microelectronic Corporation
Page 3
CMT01N60
POWER FIELD EFFECT TRANSISTOR
2006/10/11 Rev. 1.6
Champion Microelectronic Corporation
Page 4
CMT01N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-251
2006/10/11 Rev. 1.6
Champion Microelectronic Corporation
Page 5
CMT01N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-252
2006/10/11 Rev. 1.6
Champion Microelectronic Corporation
Page 6
CMT01N60
POWER FIELD EFFECT TRANSISTOR
2006/10/11 Rev. 1.6
Champion Microelectronic Corporation
Page 7
CMT01N60
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
TEL: +886-3-567 9979
FAX: +886-3-567 9909
TEL: +886-2-2788 0558
FAX: +886-2-2788 2985
2006/10/11 Rev. 1.6
Champion Microelectronic Corporation
Page 8
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