CEM8809 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEM8809 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEM8809
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 16A, RDS(ON) = 6.2mΩ @VGS = 10V.
RDS(ON)
= 9 mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
8
D
D
6
D
5
7
Surface mount Package.
SO-8
1
2
3
4
1
S
S
S
G
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
VDS
VGS
ID
Limit
Units
Drain-Source Voltage
30
±20
16
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
IDM
60
Maximum Power Dissipation
PD
2.5
W
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient b
RθJA
50
C/W
Rev 4. 2010.Dec
http://www.cetsemi.com
Details are subject to change without notice .
1
CEM8809
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 8A
1
3
6.2
9
V
4.8
6
mΩ
mΩ
On-Resistance
Dynamic Characteristics d
Input Capacitance
Ciss
Coss
Crss
2970
600
pF
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
450
td(on)
tr
td(off)
tf
20
13
74
24
72
8
40
26
ns
ns
VDD = 15V, ID = 6.5A,
VGS = 10V, RGEN = 4.7Ω
Turn-On Rise Time
Turn-Off Delay Time
148
48
ns
Turn-On Fall Time
ns
Total Gate Charge
Qg
94
nC
nC
nC
VDS = 24V, ID = 13A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
20
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
2.1
1.3
A
V
VSD
VGS = 0V, IS = 2.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEM8809
10
8
20
16
12
8
VGS=10,8,6,5V
V
GS=3V
6
4
25 C
TJ=125 C
2
0
4
-55 C
0
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
3600
3000
2400
1800
1200
600
ID=16A
VGS=10V
C
iss
C
oss
C
rss
0
-100
-50
0
50
100
150
200
0
2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
VDS=VGS
ID=250µA
V
GS=0V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEM8809
102
101
100
10-1
10-2
10
8
VDS=24V
ID=13A
RDS(ON)Limit
1ms
10ms
100ms
1s
DC
6
4
2
TA=25 C
TJ=150 C
Single Pulse
0
10-2
10-1
100
101
102
0
20
40
60
80
100
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
0.05
0.02
PDM
0.01
10-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-3
10-4
10-3
10-2
10-1
100
101
102
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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