CEM2187 [CET]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | CEM2187 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEM2187
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V.
RDS(ON) = 32mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D1
8
D1
7
D2
6
D2
5
Surface mount Package.
SO-8
1
2
3
4
1
S1
G1
S2
G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
VDS
VGS
ID
Limit
Units
Drain-Source Voltage
-20
±12
-7.6
-30
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
IDM
Maximum Power Dissipation
PD
2.0
W
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient b
RθJA
62.5
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 2. 2010.Oct
http://www.cetsemi.com
1
CEM2187
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
-20
V
-1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA -0.4
VGS = -4.5V, ID = -7.6A
VGS = -2.5V, ID = -6A
-1.3
22
V
17
24
mΩ
mΩ
Static Drain-Source
On-Resistance
32
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
gFS
VDS = -9V, ID = -7.6A
32
2805
505
395
S
Ciss
Coss
Crss
pF
pF
pF
VDS = -10V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
20
18
40
36
ns
ns
VDD = -6V, ID = -1A,
VGS = -4.5V, RGEN = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
89
178
98
ns
49
ns
Total Gate Charge
Qg
31.5
3.8
8.8
41
nC
nC
nC
VDS = -6V, ID = -7.6A,
VGS = -4.5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
-7.6
-1.2
A
V
VSD
VGS = 0V, IS = -2.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEM2187
5
4
3
2
15
12
9
25 C
-VGS=1.
5,4,4.5V
6
TJ=125 C
3
1
0
-VGS=1V
-55 C
0
0.0 0.25
0.5 0.75 1.00 1.25
1.5
0.0
0.5
1
1.5
2
2.5
3
-VDS, Drain-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
3600
3000
2400
1800
1200
600
2.2
1.9
1.6
1.3
1.0
0.7
0.4
ID=-7.6A
VGS=-4.5V
C
iss
C
oss
C
rss
0
0
2
4
6
8
10
12
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
V
GS=0V
ID=-250µA
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEM2187
102
101
100
10-1
10-2
5
4
3
2
1
0
VDS=-6V
ID=-7.6A
RDS(ON)Limit
10ms
100ms
1s
DC
TA=25 C
TJ=150 C
Single Pulse
10-2
10-1
100
101
102
0
7
14
21
28
35
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
PDM
10-1
0.1
t1
t2
0.05
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0.02
Single Pulse
10-2
10-4
10-3
10-2
10-1
100
101
102
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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