CEDF640_09 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管型号: | CEDF640_09 |
厂家: | CHINO-EXCEL TECHNOLOGY |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总4页 (文件大小:370K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CEDF640/CEUF640
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
200
Gate-Source Voltage
±20
15
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
60
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
83
W
PD
0.66
-55 to 150
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
1.8
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
50
2009.Dec
http://www.cetsemi.com
1
CEDF640/CEUF640
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 160V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
200
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 10A
2
4
V
Ω
S
0.125
9
0.15
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 10V, ID = 9A
Ciss
Coss
Crss
1955
355
55
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
td(on)
tr
td(off)
tf
21
5
42
10
ns
ns
VDD = 100V, ID = 11A,
VGS = 10V, RGEN = 9.1Ω
Turn-On Rise Time
Turn-Off Delay Time
66
11
47
10
16
132
22
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
61
nC
nC
nC
VDS = 160V, ID = 15A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
15
A
V
VSD
VGS = 0V, IS = 15A
1.5
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, I = 25A, V = 25V, R = 25Ω, Starting T = 25 C
AS
DD
G
J
6 - 2
CEDF640/CEUF640
32
12
10
8
25 C
VGS=10,9,8,7V
24
-55 C
TJ=125 C
16
8
6
VGS
=
6V
4
2
0
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
3000
2500
2000
1500
1000
500
ID=10A
VGS=10V
C
iss
C
oss
C
rss
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEDF640/CEUF640
102
10
8
VDS=160V
ID=15A
RDS(ON)Limit
10µs
100µs
1ms
101
6
10ms
DC
4
6
2
100
TC=25 C
TJ=150 C
Single Pulse
0
100
101
102
0
16
32
48
64
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
0.1
10-1
PDM
0.05
t1
t2
0.02
0.01
1. Rθ JC (t)=r (t) * Rθ JC
2. Rθ JC=See Datasheet
3. TJM-TC = P* Rθ JC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
6 - 4
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