CEB75A3 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEB75A3 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP75A3/CEB75A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
25V, 69A, RDS(ON) = 9mΩ @VGS = 10V.
RDS(ON) = 13mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-263 & TO-220 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
25
Gate-Source Voltage
±20
69
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
276
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
68
W
PD
0.45
-55 to 175
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
2.2
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
Rev 1. 2006.Nov
Details are subject to change without notice .
http://www.cetsemi.com
1
CEP75A3/CEB75A3
Electrical Characteristics T = 25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 25V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
25
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
6
Gate Threshold Voltage
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 35A
VGS = 4.5V, ID = 29A
1
3
9
V
7
mΩ
mΩ
Static Drain-Source
On-Resistance
10
13
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
gFS
Ciss
VDS = 10V, ID = 15A
12
1190
280
155
S
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
td(off)
tf
13
5
26
10
66
14
13
ns
ns
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Turn-Off Fall Time
33
7
ns
ns
Total Gate Charge
Qg
9.8
3.4
2.7
nC
nC
nC
VDS = 15V, ID = 20A,
VGS = 5V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
69
A
V
VSD
VGS = 0V, IS = 20A
0.85
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testin
2
CEP75A3/CEB75A3
100
80
60
40
20
0
100
VGS=10,8,6,4V
80
60
V
GS=3V
40
25 C
20
TJ=125 C
-55 C
0
0
1
2
3
4
0
1
2
3
4
5
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
1800
1500
1200
900
600
300
0
ID=40A
VGS=10V
C
iss
C
oss
C
rss
-100
-50
0
50
100
150
200
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
102
101
100
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEP75A3/CEB75A3
103
5
4
3
2
1
0
VDS=15V
ID=20A
RDS(ON)Limit
10µs
102
100µs
1ms
DC
101
6
TC=25 C
TJ=175 C
Single Pulse
100
10-1
100
101
102
0
2
4
6
8
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
0.1
10-1
0.05
PDM
t1
t2
0.02
0.01
1. Rθ JC (t)=r (t) * Rθ JC
2. Rθ JC=See Datasheet
3. TJM-TC = P* Rθ JC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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