S002611 [CENTRAL]
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN;
| 型号： | S002611 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总2页 (文件大小：639K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CP517
Power Transistor
Central
Semiconductor Corp.
PNP - Darlington Chip
PROCESS DETAILS
Process
EPITAXIAL BASE
Die Size
111 X 111 MILS
10 MILS
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
20 X 30 MILS
20 X 26 MILS
Al - 30,000Å
Au/Cr/Ni/Au - 6,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
910
PRINCIPAL DEVICE TYPES
2N6040
2N6041
2N6042
2N6299
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (18-August 2006)
TM
PROCESS CP517
Typical Electrical Characteristics
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (18-August 2006)
www.centralsemi.com
相关型号：
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