CZTA64BK [CENTRAL]
Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,;
| 型号： | CZTA64BK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, 晶体 晶体管 达林顿晶体管 |
| 文件： | 总2页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CZTA14 NPN
CZTA64 PNP
www.centralsemi.com
SURFACE MOUNT
COMPLEMENTARY
SILICON DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA14, CZTA64
types are complementary silicon Darlington transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
applications requiring extremely high gain.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
V
V
V
30
30
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
10
V
Continuous Collector Current
Power Dissipation
I
500
mA
W
C
P
2.0
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
J, stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
UNITS
I
I
V
V
=30V
=10V
nA
nA
V
CBO
EBO
CB
100
EB
BV
I =100µA
30
CES
CE(SAT)
BE(ON)
FE
C
V
V
I =100mA, I =0.1mA
1.5
2.0
V
C
B
V
=5.0V, I =100mA
V
CE
CE
CE
CE
C
h
h
V
V
V
=5.0V, I =10mA
10,000
20,000
125
C
=5.0V, I =100mA
FE
C
f
=5.0V, I =10mA, f=100MHz
MHz
T
C
R4 (2-March 2011)
CZTA14 NPN
CZTA64 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON DARLINGTON TRANSISTORS
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R4 (2-March 2011)
www.centralsemi.com
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