CS65-70PB [CENTRAL]
SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS; 可控硅整流70安培RMS ， 200 THRU 1200伏
| 型号： | CS65-70PB |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS |
| 文件： | 总2页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CS65-70B
CS65-70D
CS65-70M
CS65-70N
CS65-70P
CS65-70PB
SILICON CONTROLLED RECTIFIER
70 AMPS RMS, 200 THRU 1200 VOLTS
TO-65 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS65-70B series types are High Power Silicon Controlled Rectifiers designed for
phase control applications.
MAXIMUM RATINGS (T =25°C unless otherwise noted)
A
CS65 CS65 CS65 CS65
-70B -70D -70M -70N
CS65 CS65
SYMBOL
-70P -70PB UNITS
Peak Repetitive Off-State Voltage
Peak Non-Repetitive Reverse Voltage
V
V
I
I
I
, V
200
300
400
500
600
700
800 1000 1200
900 1100 1300
V
V
A
A
A
DRM RRM
RSM
T(RMS)
T(AV)
TSM
RMS On-State Current (T =102°C)
63
40
C
Average On-State Current (T =102°C)
C
Peak One Cycle Surge ( 60Hz)
1000
4100
I2t Value for Fusing (t=8.3ms)
I2t
A2s
Peak Forward Gate Voltage
V
V
P
P
20
10
10
V
FGM
RGM
GM
Peak Reverse Gate Voltage
Peak Gate Power
Average Gate Power (tp=10µs)
Peak Gate Current
V
W
W
A
1.0
3.0
200
G(AV)
GM
I
Critical Rate of Rise of On-State Current
di/dt
A/µs
Storage Temperature
T
T
-65 to +150
-65 to +125
0.35
°C
stg
J
Junction Temperature
Thermal Resistance
°C
°C/W
Θ
J-C
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
V
V
, I
Rated V
, V
V =12V, R =33Ω
, T =125°C
6.0
100
200
3.0
mA
mA
mA
V
V
V/µs
DRM RRM
GT
H
GT
TM
DRM RRM
C
D
L
I =500mA
T
V =12V, R =33Ω
D
L
I
=500A
3.0
TM
dv/dt
V =.67 x V
, T =125°C
200
D
DRM
C
(SEE REVERSE SIDE)
R2
CS65-70 SERIES
SILCON CONTROLLED RECTIFIER
MAXIMUM ON-STATECHARACTERISTICS
10 00
100
10
T
= 2 5°C
T
= 12 5°C
C
C
0
0.5
1
1.5
2
2.5
3
3.5
V
, ON-STATE V OLTAGE ( V )
TM
TO-65 PACKAGE - MECHANICAL OUTLINE
A
DIMENSIONS
INCHES
MILLIMETERS
SYMBOL MIN
MAX
0.667
MIN
-
MAX
16.94
0.76
D
A (DIA)
-
B
B
C
D
E
F
0.025 0.030 0.64
-
0.770
-
19.56
C
0.677 0.685 17.20 17.40
0.120
-
3.05
-
0.200 0.300 5.08
7.62
3.93
2.15
G (DIA) 0.145 0.155 3.68
F
H
H
J
0.065 0.085 1.65
1.200 1.250 30.48 31.75
G
K (DIA) 0.055 0.065 1.40
1.65
3.94
13.08
CATHODE
L
M
N
0.115 0.155 2.92
0.515
E
-
-
K
J
0.427 0.447 10.84 11.35
TO-65 (REV: R1)
GATE
M
N
L
ANODE
R1
1/4-28 UNF - 3A THREAD
相关型号：
CS65-70PBLEADFREE
Silicon Controlled Rectifier, 63A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-65, TO-65, 2 PIN
CENTRAL
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