CPD24-CMR1F-04M-WN [CENTRAL]
Rectifier Diode,;型号: | CPD24-CMR1F-04M-WN |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Rectifier Diode, |
文件: | 总2页 (文件大小:811K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PROCESS CPD24
Fast Recovery Rectifier
1 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
GLASS PASSIVATED MESA
Die Size
51 x 51 MILS
Die Thickness
11 MILS
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
35 x 35 MILS
Ni/Au - 5,000Å/2,000Å
Ni/Au - 5,000Å/2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
4,250
PRINCIPAL DEVICE TYPES
1N4933 thru 1N4937
1N4942 thru 1N4948
1N5615 thru 1N5623
CMR1F-02M Series
BACKSIDE CATHODE
R1
R3 (29-April 2010)
www.centralsemi.com
PROCESS CPD24
Typical Electrical Characteristics
R3 (29-April 2010)
www.centralsemi.com
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