CP317-PN3564-WN [CENTRAL]
Transistor;
| 型号： | CP317-PN3564-WN |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CP317
Small Signal Transistor
NPN - RF Transistor Chip
Central
Semiconductor Corp.
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
Die Thickness
14.5 x 14.5 MILS
9.0 MILS
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
2.4 x 2.2 MILS
2.4 x 2.2 MILS
Al - 30,000Å
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
53,730
PRINCIPAL DEVICE TYPES
CMPT918
2N918
2N2857
2N5179
2N5770
BFY90
PN3563
PN3564
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1-August 2002)
TM
PROCESS CP317
Central
Semiconductor Corp.
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (1-August 2002)
www.centralsemi.com
相关型号：
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