CMXT2207BK [CENTRAL]
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERMINI-6;
| 型号： | CMXT2207BK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SUPERMINI-6 晶体 小信号双极晶体管 开关 光电二极管 |
| 文件： | 总2页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMXT2207
Central
SURFACE MOUNT
SUPERmini™
Semiconductor Corp.
DUAL COMPLEMENTARY
SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXT2207 type is
a dual complementary silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, designed for
small signal general purpose and switching applications.
MARKING CODE: X07
SOT-26 CASE
MAXIMUM RATINGS: (T =25°C)
A
NPN
PNP
SYMBOL
UNITS
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
75
40
6.0
60
60
5.0
CBO
CEO
EBO
I
P
600
350
C
Power Dissipation
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J stg
-65 to +150
357
°C
°C/W
Θ
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
I
I
I
I
I
I
I
V
V
V
V
V
V
V
=60V
=50V
10
nA
nA
µA
µA
nA
nA
nA
V
CBO
CBO
CBO
CBO
EBO
CEV
CEV
CB
CB
CB
CB
EB
CE
CE
10
=60V, T =125°C
10
A
=50V, T =125°C
A
10
=3.0V
10
10
=60V, V =3.0V
EB
=30V, V =0.5V
50
BE
BV
BV
BV
I =10µA
75
40
60
60
CBO
CEO
EBO
C
I =10mA
V
C
I =10µA
6.0
5.0
V
E
V
V
V
V
I =150mA, I =15mA
0.3
1.0
1.2
2.0
0.4
1.6
1.3
2.6
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =500mA, I =50mA
V
C
B
I =150mA, I =15mA
0.6
V
C
B
I =500mA, I =50mA
V
C
B
h
h
h
h
h
h
V
=10V, I =0.1mA
35
50
75
CE
CE
CE
CE
CE
CE
CE
CE
C
V
V
V
V
V
V
V
=10V, I =1.0mA
100
100
100
FE
C
=10V, I =10mA
75
FE
C
=10V, I =150mA
100
50
300
300
FE
C
=1.0V, I =150mA
FE
C
=10V, I =500mA
40
50
FE
C
f
f
=20V, I =20mA, f=100MHz
300
MHz
MHz
T
C
=20V, I =50mA, f=100MHz
200
T
C
R2 (06-August 2003)
TM
CMXT2207
Central
SURFACE MOUNT
SUPERmini™
Semiconductor Corp.
DUAL COMPLEMENTARY
SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN
PNP
MIN MAX
8.0
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
pF
C
C
C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=10V, I =0, f=1.0MHz
8.0
25
ob
CB
EB
EB
CE
CE
CE
CE
CE
CE
CE
CE
CB
CE
CC
CC
CC
CC
CC
CC
CC
CC
E
=0.5V, I =0, f=1.0MHz
pF
ib
C
=2.0V, I =0, f=1.0MHz
30
pF
ib
C
h
h
h
h
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
2.0
8.0
1.25
8.0
kΩ
ie
C
=10V, I =10mA, f=1.0kHz
0.25
kΩ
ie
C
-4
-4
=10V, I =1.0mA, f=1.0kHz
x10
x10
re
re
fe
fe
oe
oe
C
=10V, I =10mA, f=1.0kHz
4.0
C
=10V, I =1.0mA, f=1.0kHz
50
75
5.0
25
300
375
35
C
=10V, I =10mA, f=1.0kHz
C
=10V, I =1.0mA, f=1.0kHz
µmhos
µmhos
ps
C
=10V, I =10mA, f=1.0kHz
200
150
4.0
C
rb’C
NF
=10V, I =20mA, f=31.8MHz
E
c
=10V, I =100mA, R =1.0kΩ, f=1.0kHz
dB
C
S
t
=30V, V =0.5V, I =150mA, I =15mA
BE B1
45
10
ns
on
C
t
=30V, V =0.5V, I =150mA, I =15mA
BE B1
10
25
ns
d
C
t
=30V, V =0.5V, I =150mA, I =15mA
BE B1
40
ns
r
C
t
=6.0V, I =150mA, I =I =15mA
100
ns
off
C
B1 B2
t
=30V, I =150mA, I =I =15mA
225
60
ns
s
C
B1 B2
t
=6.0V, I =150mA, I =I =15mA
B1 B2
80
30
ns
s
C
t
=30V, I =150mA, I =I =15mA
ns
f
C
B1 B2
t
=6.0V, I =150mA, I =I =15mA
B1 B2
ns
f
C
SOT-26 CASE - MECHANICAL OUTLINE
6
5
2
4
Q2
Q1
1
3
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODE: X07
R2 (06-August 2003)
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