CMSD2005STRLEADFREE [CENTRAL]
暂无描述;
| 型号： | CMSD2005STRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 二极管 开关 高压 |
| 文件： | 总2页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMSD2005S
Central
Semiconductor Corp.
SURFACE MOUNT
DUAL, IN SERIES
DESCRIPTION:
HIGH VOLTAGE
The CENTRAL SEMICONDUCTOR
SILICON SWITCHING DIODES
CMSD2005S contains two (2) High Voltage
Silicon Switching Diodes, manufactured by the
epitaxial planar process, epoxy molded in a
SOT-323 surface mount package, designed for
applications requiring high voltage capability.
MARKING CODE: B5D
SOT-323 CASE
MAXIMUM RATINGS (T =25°C)
A
SYMBOL
UNITS
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp= 1µs
Forward Surge Current, tp= 1s
Power Dissipation
V
300
350
200
225
625
4.0
V
V
R
V
RRM
I
mA
mA
mA
A
O
I
F
I
FRM
I
FSM
FSM
P
I
1.0
A
275
mW
D
Operating and Storage
Junction Temperature
T ,T
J stg
-65 to +150
455
°C
Thermal Resistance
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V =280V
MIN
TYP
MAX
100
UNITS
nA
µA
V
I
I
R
R
R
V =280V, T =150°C
100
R
A
BV
I =100µA
350
R
R
V
V
V
I =20mA
0.87
1.0
V
F
F
F
F
I =100mA
V
F
I =200mA
1.25
5.0
V
F
C
V =0, f=1.0 MHz
pF
ns
T
R
t
I =I =30mA, Rec. to 3.0mA, R =100Ω
50
rr
R
F
L
R0 (17-August 2004)
TM
CMSD2005S
Central
Semiconductor Corp.
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-323 CASE - MECHANICAL OUTLINE
MARKING CODE: B5D
2
1
D1
D2
3
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
R0 (17-August 2004)
相关型号：
©2020 ICPDF网 联系我们和版权申明