CMRDM7590BKPBFREE [CENTRAL]
Transistor,;
| 型号： | CMRDM7590BKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMRDM7590
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMRDM7590 is
an Enhancement-mode Dual P-Channel Field Effect
Transistor designed for high speed pulsed amplifier
and driver applications. This MOSFET offers Low
r
and Low Threshold Voltage.
DS(ON)
MARKING CODE: CW
FEATURES:
• Power Dissipation: 125mW
• Low Package Profile: 0.5mm (MAX)
SOT-963 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Low r
• Low Threshold Voltage
DS(ON)
• Power Supply Converter Circuits
• Battery Powered Portable Devices
• Logic Level Compatibility
• Small SOT-963 Surface Mount Package
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
SYMBOL
UNITS
V
V
mA
mA
mW
°C
A
V
V
I
I
20
8.0
140
180
125
DS
GS
D
D
D
stg
Continuous Drain Current, t <5.0s
p
Power Dissipation
P
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
1000
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, V =0
100
50
100
nA
GSSF GSSR
DSS
DSS
GS
DS
DS
GS
DS
=5.0V, V =0
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
S
pF
pF
pF
ns
ns
GS
=16V, V =0
GS
BV
V
=0, I =250μA
20
0.4
DSS
GS(th)
D
=V
I =250μA
=4.5V, I =100mA
1.0
5.0
7.0
10
DS GS, D
r
r
r
r
r
Q
Q
Q
4.0
5.5
8.0
11
20
0.536
0.292
0.236
1.3
1.0
12
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DD
DD
D
=2.5V, I =50mA
=1.8V, I =20mA
=1.5V, I =10mA
=1.2V, I =1.0mA
=10V, V =4.5V, I =100mA
=10V, V =4.5V, I =100mA
D
D
D
D
GS
GS
17
g(tot)
gs
D
D
D
=10V, V =4.5V, I =100mA
GS
gd
FS
rss
iss
oss
g
=5.0V, I =125mA
D
C
C
C
t
t
=15V, V =0, f=1.0MHz
GS
=15V, V =0, f=1.0MHz
GS
GS
GS
=15V, V =0, f=1.0MHz
=10V, V =4.5V, I =200mA
=10V, V =4.5V, I =200mA
GS
2.7
60
210
on
off
D
D
R2 (2-August 2011)
CMRDM7590
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
SOT-963 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Source Q1
2) Gate Q1
3) Drain Q2
4) Source Q2
5) Gate Q2
6) Drain Q1
MARKING CODE: CW
R2 (2-August 2011)
www.centralsemi.com
相关型号：
CMRDM7590TR
Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND FEMTOMINI-6
CENTRAL
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