CMPT5551 [CENTRAL]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | CMPT5551 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Ce n t r a l
CMPT5551
S e m ic o n d u c t o r Co r p .
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT5551 type is an NPN silicon transistor
manufactured bythe epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage amplifier
applications.
Marking Code is 1FF.
SOT-23 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
180
160
6.0
600
350
V
V
V
CBO
CEO
EBO
V
V
I
mA
mW
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
J stg
JA
-65 to +150
357
C
C/W
o
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
50
UNITS
I
I
V
V
=120V
nA
µ A
V
V
V
V
V
V
V
CBO
CBO
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
FE
FE
T
CB
o
120V, T =100 C
CB=
A
BV
BV
BV
V
V
V
V
h
h
h
f
C
I =100µA
180
160
6.0
C
I =1.0mA
C
I =10µA
E
I =10mA, I =1.0mA
0.15
0.20
1.00
1.00
C
B
B
B
B
I =50mA, I =5.0mA
C
I =10mA, I =1.0mA
C
I =50mA, I =5.0mA
C
V
=5.0V, I =1.0mA
80
80
30
CE
CE
CE
CE
CB
C
V
V
V
V
=5.0V, IC=10mA
250
=5.0V, I =50mA
C
=10V, I =10mA, f=100MHz
C
100
300
6.0
MHz
pF
=10V, I =0, f=1.0MHz
ob
E
186
SYMBOL
TEST CONDITIONS
=10V, I =1.0mA, f=1.0kHz
MIN
50
MAX
200
UNITS
h
V
fe
CE
C
N
F
VCE=5.0V, I =200µA, R =10Ω
C
S
f=10Hz to 15.7kHz
8.0
dB
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
187
相关型号：
CMPT5551BKLEADFREE
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
CENTRAL
CMPT5551ETR
Small Signal Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
CENTRAL
CMPT5551HCBK
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CENTRAL
CMPT5551HCLEADFREE
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CENTRAL
CMPT5551HCTR
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CENTRAL
©2020 ICPDF网 联系我们和版权申明