CMCS5062 [CENTRAL]
SURFACE MOUNT SILICON CONTROLLED RECTIFIER; 表面贴装可控硅整流
| 型号： | CMCS5062 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT SILICON CONTROLLED RECTIFIER |
| 文件： | 总2页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMCS5062
CMCS5064
CMCS5066
Central
Semiconductor Corp.
SURFACE MOUNT
DESCRIPTION:
SILICON CONTROLLED RECTIFIER
The CENTRAL SEMICONDUCTOR
CMCS5062, CMCS5064 and CMCS5066 types
are epoxy molded PNPN Silicon Controlled
Rectifiers manufactured in an SC-59 case,
designed for control systems and sensing circuit
applications.
MARKING CODES: CMCS5062: CP2B
CMCS5064: CP2D
CMCS5066: CP2F
SC-59 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
CMCS5062 CMCS5064 CMCS5066
UNITS
Peak Repetitive Off-State Voltage
Peak Repetitive Reverse Voltage
RMS On-State Current
V
200
200
400
400
0.8
600
600
V
V
DRM
RRM
V
I
A
T(RMS)
Average On-State Current (T =67°C)
C
Power Dissipation
I
0.51
350
A
T(AV)
P
D
mW
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
-65 to +150
357
°C
J stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
CMCS5062
CMCS5064
CMCS5066
MIN MAX UNITS
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
I
I
I
I
V =Rated V
, R =1KΩ
DRM GK
1.0
1.0
1.0
1.0
1.0
1.0
50
µA
µA
µA
µA
V
DRM
RRM
DRM
RRM
D
V =Rated V
, R =1KΩ
DRM GK
D
V =Rated V
D
, R =1KΩ, T =125°C
50
50
DRM GK
C
V =Rated V
D
, R =1KΩ, T =125°C
50
50
50
DRM GK
C
V
I =1.2A
T
1.7
1.7
1.7
200
0.8
T
I
V =7.0V, R =100Ω, R =1KΩ
200
0.8
200
0.8
µA
V
GT
D
L
GK
V
V =7.0V, R =100Ω, R =1KΩ
GK
GT
GD
D
L
V
I
V = Rated V
DRM
, R =100Ω, T =125°C
0.1
0.1
0.1
V
D
L
C
V =7.0, R =1KΩ
GK
5.0
5.0
5.0
mA
H
D
t
V = Rated V
, I =1.0mA, R =1.0Ω,
GK
ON
D
DRM GT
di/dt=6.0A/µs
2.8 TYP
2.8 TYP
2.8 TYP
µs
R0 (7-March 2005)
TM
CMCS5062
CMCS5064
CMCS5066
Central
Semiconductor Corp.
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
MECHANICAL OUTLINE - SC-59
LEAD CODE:
1) CATHODE
2) GATE
3) ANODE
MARKING CODES:
CMCS5062: CP2B
CMCS5064: CP2D
CMCS5066: CP2F
R0 (7-March 2005)
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