CLL3595 [CENTRAL]
SURFACE MOUNT LOW LEAKAGE SILICON DIODE; 表面贴装小漏硅二极管
| 型号： | CLL3595 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT LOW LEAKAGE SILICON DIODE |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CLL3595
Central
Semiconductor Corp.
SURFACE MOUNT
LOW LEAKAGE SILICON DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL3595
type is an epitaxial planar silicon diode,
manufactured in a hermetically sealed glass
surface mount package, designed for low
leakage, high conductance applications.
SOD-80 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
Peak Working Reverse Voltage
Average Forward Current
V
V
O
150
125
150
225
600
500
4.0
V
V
RRM
RWM
I
I
mA
mA
mA
mA
A
Forward Steady-State Current
Recurrent Peak Forward Current
Peak Forward Surge Current (1.0s pulse)
Peak Forward Surge Current (1.0µs pulse)
Power Dissipation
F
f
i
I
I
FSM
FSM
P
500
mW
D
Operating and Storage
Junction Temperature
T ,T
stg
-65 to +200
350
°C
°C/W
J
Thermal Resistance
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
BV
I =100µA
150
V
nA
nA
µA
nA
V
R
R
I
I
I
I
V =125V
1.0
500
3.0
R
R
R
R
R
V =125V, T =125°C
R
A
V =125V, T =150°C
R
A
V =30V, T =125°C
300
0.69
0.77
0.80
0.88
0.92
1.00
8.0
R
A
V
V
V
V
V
V
I =1.0mA
0.54
0.62
0.65
0.75
0.79
0.83
F
F
F
F
F
F
F
I =5.0mA
V
F
I =10mA
V
F
I =50mA
V
F
I =100mA
V
F
I =200mA
V
F
C
t
V =0, f=1.0MHz
pF
µs
T
R
V =3.5V, I =10mA, R =1.0kΩ
3.0
rr
R
f
L
R1 ( 25-September 2001)
TM
CLL3595
Central
Semiconductor Corp.
SURFACE MOUNT
LOW LEAKAGE SILICON DIODE
SOD-80 CASE - MECHANICAL OUTLINE
R1 ( 25-September 2001)
相关型号：
CLL3595LEADFREE
Rectifier Diode, 1 Element, 0.15A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
CENTRAL
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