CJD50BKPBFREE [CENTRAL]
Transistor,;
| 型号： | CJD50BKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, 开关 晶体管 |
| 文件： | 总2页 (文件大小：556K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CJD47
CJD50
www.centralsemi.com
SURFACE MOUNT SILICON
NPN POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD47 and CJD50
are silicon NPN power transistors manufactured in
a surface mount package, and designed for high
voltage applications such as power supplies and other
switching applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL
CJD47
CJD50
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
350
500
V
CBO
CEO
EBO
V
V
250
400
V
V
5.0
1.0
2.0
600
15
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
I
A
C
I
A
CM
I
mA
W
B
P
D
D
Power Dissipation (T =25°C)
A
P
1.56
W
Operating and Storage Junction Temperature
T , T
-65 to +150
8.33
°C
J
stg
Thermal Resistance
Θ
°C/W
°C/W
JC
JA
Thermal Resistance
Θ
80.1
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
I
I
V
V
V
V
V
=150V (CJD47)
=300V (CJD50)
=350V (CJD47)
=500V (CJD50)
=5.0V
200
μA
CEO
CEO
CES
CES
EBO
CE
CE
CE
CE
EB
200
100
100
1.0
μA
μA
μA
mA
V
BV
I =30mA (CJD47)
250
400
CEO
CEO
C
BV
I =30mA (CJD50)
V
C
V
V
I =1.0A, I =200mA
1.0
1.5
150
V
CE(SAT)
BE(ON)
FE
C
B
V
=10V, I =1.0A
V
CE
CE
CE
CE
CE
C
h
h
V
V
V
V
=10V, I =300mA
30
10
10
25
C
=10V, I =1.0A
FE
C
f
=10V, I =200mA, f=2.0MHz
MHz
T
C
h
=10V, I =200mA, f=1.0kHz
fe
C
R3 (21-January 2013)
CJD47
CJD50
SURFACE MOUNT SILICON
NPN POWER TRANSISTORS
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R3 (21-January 2013)
www.centralsemi.com
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