CJD350TR13TIN/LEAD [CENTRAL]
Transistor;
| 型号： | CJD350TR13TIN/LEAD |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：1050K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CJD340 NPN
CJD350 PNP
www.centralsemi.com
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD340 and CJD350
are complementary silicon power transistors manufactured
in a surface mount package, and designed for high
voltage general purpose applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
V
300
300
V
CBO
CEO
EBO
V
V
V
V
3.0
I
500
mA
mA
W
C
I
750
CM
P
15
D
D
Power Dissipation (T =25°C)
A
P
1.56
W
Operating and Storage Junction Temperature
T , T
-65 to +150
8.33
°C
J
stg
Thermal Resistance
Θ
°C/W
°C/W
JC
JA
Thermal Resistance
Θ
80.1
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=300V
=300V
=3.0V
100
μA
CBO
CEO
EBO
CB
CE
EB
100
100
μA
μA
V
BV
I =1.0mA
300
CEO
CE(SAT)
CE(SAT)
BE(ON)
BE(ON)
FE
C
V
V
V
V
I =100mA, I =10mA (CJD340)
1.0
2.6
1.5
2.0
240
V
C
B
I =100mA, I =10mA (CJD350)
V
C
B
V
=10V, I =1.0A (CJD340)
V
CE
CE
CE
CE
C
V
V
V
=10V, I =1.0A (CJD350)
V
C
h
=10V, I =50mA
30
10
C
f
=10V, I =50mA, f=10MHz
MHz
T
C
R5 (11-June 2013)
CJD340 NPN
CJD350 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R5 (11-June 2013)
www.centralsemi.com
CJD340 NPN
CJD350 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
NPN TYPICAL ELECTRICAL CHARACTERISTICS
R5 (11-June 2013)
www.centralsemi.com
CJD340 NPN
CJD350 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
PNP TYPICAL ELECTRICAL CHARACTERISTICS
R5 (11-June 2013)
www.centralsemi.com
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