CBR25F-010P_15 [CENTRAL]
FAST RECOVERY SILICON BRIDGE RECTIFIERS;
| 型号： | CBR25F-010P_15 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | FAST RECOVERY SILICON BRIDGE RECTIFIERS 快速恢复二极管 |
| 文件： | 总2页 (文件大小：470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CBR25F-010P SERIES
www.centralsemi.com
FAST RECOVERY
SILICON BRIDGE RECTIFIERS
25 AMP, 100 THRU 600 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR25F-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for fast recovery applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
MARKING: FULL PART NUMBER
CASE FP
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
CBR25F
A
SYMBOL -010P
-020P
-040P
-060P
UNITS
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
100
100
70
200
200
140
400
600
V
RRM
V
400
280
600
420
V
V
R
RMS Reverse Voltage
V
R(RMS)
Average Forward Current (T =60°C)
C
I
25
A
O
Peak Forward Surge Current
I
300
A
FSM
RMS Isolation Voltage (case to lead)
Operating and StorageJunction Temperature
Thermal Resistance
V
2500
Vac
°C
iso
T , T
-65 to +150
1.5
J
Θ
stg
°C/W
JC
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C)
SYMBOL TEST CONDITIONS
A
MIN
MAX
UNITS
I
V =Rated V
10
μA
R
R
RRM
V
I =12.5A
1.3
V
F
F
t
t
I =0.5A, I =1.0A, I =0.25A (100V, 200V, 400V)
200
350
ns
ns
rr
rr
F
R
rr
I =0.5A, I =1.0A, I =0.25A (600V)
rr
F
R
R1 (4-November 2013)
CBR25F-010P SERIES
FAST RECOVERY
SILICON BRIDGE RECTIFIERS
25 AMP, 100 THRU 600 VOLT
CASE FP - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R1 (4-November 2013)
www.centralsemi.com
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