C106D [CENTRAL]

4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS; 4.0A敏感门可控硅整流200 THRU 600伏
C106D
型号: C106D
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS
4.0A敏感门可控硅整流200 THRU 600伏

栅极 触发装置 可控硅整流器 局域网
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TM  
C106B  
C106D  
Central  
C106M  
Semiconductor Corp.  
4.0A SENSITIVE GATE  
SILICON CONTROLLED RECTIFIER  
200 THRU 600 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR C106B  
Series are 4.0A, PNPN sensitive gate triggering  
silicon controlled rectifiers with voltages ranging  
from 200V to 600V. These devices are designed  
for applications such as temperature, light and  
speed control, remote warning and triggering  
applications.  
MARKING CODE: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
C106B C106D C106M  
UNITS  
V
A
A
A2s  
Peak Repetitive Off-State Voltage  
RMS On-State Current (T =80°C)  
V
V
200  
400  
600  
DRM, RRM  
I
I
4.0  
20  
1.65  
C
T(RMS)  
TSM  
Peak Non-Repetitive Surge Current (T =110°C)  
J
I2t Value for Fusing (t=8.3ms)  
I2t  
Peak Gate Power (T =80°C)  
P
P
I
0.5  
0.1  
0.2  
W
W
A
°C  
°C  
°C/W  
°C/W  
C
GM  
G(AV)  
GFM  
Average Gate Power (T =80°C)  
C
Peak Forward Gate Current (T =80°C)  
C
Storage Temperature  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
T
T
Θ
Θ
-40 to +150  
-40 to +110  
3.0  
stg  
J
JC  
JA  
75  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
J
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
UNITS  
µA  
µA  
V
µA  
µA  
V
V
mA  
mA  
mA  
mA  
mA  
V/µs  
I
I
V
I
I
Rated V  
Rated V  
V
V
R
=1KΩ  
=1KΩ, T =110°C  
DRM, RRM  
DRM, RRM, GK  
R
100  
2.2  
200  
500  
0.8  
1.0  
3.0  
6.0  
2.0  
5.0  
7.0  
DRM, RRM  
DRM, RRM, GK  
J
I
=4.0A  
TM  
FM  
I
I
V
V
V
V
V
V
=6.0V, R =100Ω  
GT  
GT  
AK  
AK  
AK  
AK  
L
=6.0V, R =100Ω, T = -40°C  
L
J
=6.0V, R =100Ω  
0.4  
0.5  
GT  
GT  
L
=6.0V, R =100Ω, T = -40°C  
L
J
I
I
I
I
I
V =12V  
H
D
V =12V, T = -40°C  
H
H
L
D
J
J
V =12V, T =110°C  
D
V =12V  
D
V =12V, T = -40°C  
L
D
J
dv/dt  
V = Rated V  
, R =1KΩ, T =110°C  
DRM GK  
8.0  
D
J
R0 (27-April 2004)  
TM  
C106B  
C106D  
Central  
Semiconductor Corp.  
C106M  
4.0A SENSITIVE GATE  
SILICON CONTROLLED RECTIFIER  
200 THRU 600 VOLTS  
TO-126 CASE - MECHANICAL OUTLINE  
DIMENSIONS  
LEAD CODE:  
1) CATHODE  
2) ANODE  
INCHES  
MILLIMETERS  
SYMBOL MIN  
MAX  
0.094 0.110  
0.050  
MIN  
2.40  
MAX  
2.80  
A
B
C
D
E
F
3) GATE  
1.27  
0.015 0.030  
0.291 0.335  
0.148  
0.38  
7.40  
0.75  
8.50  
MARKING CODE:  
3.75  
FULL PART NUMBER  
0.118 0.134  
3.00  
3.40  
G
H
J
0.413 0.472 10.50 12.00  
0.618  
0.024 0.035  
0.089  
15.70  
0.62  
0.90  
K
L
M
N
2.25  
4.50  
0.177  
0.045 0.055  
0.083  
1.14  
1.40  
2.10  
TO-126 (REV:R3)  
R0 (27-April 2004)  

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