BU806 [CENTRAL]
NPN SILICON DARLINGTON TRANSISTOR; NPN硅达林顿晶体管
| 型号： | BU806 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | NPN SILICON DARLINGTON TRANSISTOR |
| 文件： | 总2页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BU806
BU807
www.centralsemi.com
NPN SILICON
DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BU806 and
BU807 types are NPN Silicon Darlington Transistors
designed for high voltage, high current, fast switching
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
BU806
400
BU807
330
UNITS
V
C
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CBO
V
400
200
330
150
V
V
CEV
CEO
EBO
V
V
6.0
8.0
15
V
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
I
A
C
I
A
CM
I
2.0
60
A
B
P
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
70
°C
°C/W
°C/W
J
stg
Θ
Θ
JA
JC
Thermal Resistance
2.08
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
I
I
V
V
V
V
V
=400V (BU806)
100
μA
CES
CES
CEV
CEV
EBO
CE
CE
CE
CE
EB
=330V (BU807)
100
100
100
3.5
μA
μA
μA
mA
V
=400V, V =6.0V (BU806)
EB
=330V, V =6.0V (BU807)
EB
=6.0V
BV
I =100mA (BU806)
200
150
CEO
CEO
C
BV
I =100mA (BU807)
V
C
V
V
V
I =5.0A, I =50mA
1.5
2.4
2.0
V
CE(SAT)
BE(SAT)
F
C
B
I =5.0A, I =50mA
V
C
B
I =4.0A
V
F
t
t
V
=100V, I =5.0A, I =50mA, I =500mA
B1 B2
0.35
0.4
ꢀs
ꢀs
on
off
CC
CC
C
V
=100V, I =5.0A, I =50mA, I =500mA
1.0
C
B1 B2
R0 (4-August 2011)
BU806
BU807
NPN SILICON
DARLINGTON TRANSISTOR
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
R0 (4-August 2011)
www.centralsemi.com
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