BCY58VIILEADFREE [CENTRAL]
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN;
| 型号： | BCY58VIILEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN 开关 晶体管 |
| 文件： | 总2页 (文件大小：540K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCY58, VII, VIII, IX, X
BCY59, VII, VIII, IX, X
www.centralsemi.com
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCY58 and BCY59
series types are silicon NPN epitaxial planar transistors,
mounted in a hermetically sealed metal case, designed
for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted) SYMBOL
BCY58
32
32
BCY59
45
45
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
V
V
V
CBO
CEO
EBO
C
CM
7.0
100
200
200
340
1.0
I
I
I
BM
Power Dissipation
P
P
D
D
Power Dissipation (T =25°C)
C
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +200
450
J
stg
JA
JC
Thermal Resistance
150
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=Rated V
=Rated V
=5.0V
10
10
10
nA
CBO
CBO
EBO
CBO
CBO
CEO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
CB
CB
EB
CBO
CBO
, T =150°C
μA
nA
V
V
V
V
V
V
V
A
BV
BV
BV
BV
BV
V
V
V
V
I =10μA (BCY58)
32
45
32
45
7.0
C
I =10μA (BCY59)
C
I =2.0mA (BCY58)
C
I =2.0mA (BCY59)
C
I =1.0μA
E
I =10mA, I =250ꢀA
0.35
0.70
0.85
1.20
C
B
B
B
B
I =100mA, I =2.5mA
C
I =10mA, I =250ꢀA
0.60
0.75
V
V
C
I =100mA, I =2.5mA
C
BCY58-VII
BCY59-VII
MIN TYP MAX
BCY58-VIII
BCY59-VIII
MIN MAX
BCY58-IX
BCY59-IX
MIN MAX
BCY58-X
BCY59-X
MIN MAX
h
h
h
h
V
=5.0V, I =10μA
-
20
-
-
-
20
180 310
120 400
-
40
-
100
380 630
240 1000
-
FE
FE
FE
FE
CE
CE
CE
CE
C
V
V
V
=5.0V, I =2.0mA
120
80
40
220
-
-
250 460
160 630
60
C
=1.0V, I =10mA
C
=1.0V, I =100mA
-
45
-
-
60
-
C
R2 (8-November 2013)
BCY58, VII, VIII, IX, X
BCY59, VII, VIII, IX, X
SILICON
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNITS
f
C
C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, I =10mA, f=100MHz
150
MHz
T
ob
ib
CE
CB
EB
CE
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
C
=10V, I =0, f=1.0MHz
5.0
15
10
pF
pF
dB
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
E
=0.5V, I =0, f=1.0MHz
C
NF
=5.0V, I =0.2mA, R =2.0kΩ, f=1.0kHz, B=200Hz
C
C
s
t
t
t
t
t
t
t
t
t
t
t
t
=10V, I =10mA, I =I =1.0mA
85
35
50
450
400
80
55
5.0
50
450
250
20
150
on
d
r
off
s
f
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
B1 B2
=10V, I =10mA, I =I =1.0mA
C
=10V, I =10mA, I =I =1.0mA
C
=10V, I =10mA, I =I =1.0mA
800
150
800
C
=10V, I =10mA, I =I =1.0mA
C
=10V, I =10mA, I =I =1.0mA
C
=10V, I =100mA, I =I =10mA
on
d
C
=10V, I =100mA, I =I =10mA
C
=10V, I =100mA, I =I =10mA
r
off
s
C
B1 B2
B1 B2
B1 B2
=10V, I =100mA, I =I =10mA
C
=10V, I =100mA, I =I =10mA
C
=10V, I =100mA, I =I =10mA
B1 B2
f
C
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R2 (8-November 2013)
www.centralsemi.com
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