2N6676 [CENTRAL]
NPN SILICON POWER TRANSISTOR; NPN硅功率晶体管
| 型号： | 2N6676 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | NPN SILICON POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6676
2N6677
2N6678
www.centralsemi.com
DESCRIPTION:
NPN SILICON
The CENTRAL SEMICONDUCTOR 2N6676 SERIES
types are NPN Silicon Power Transistors designed for
high voltage switching applications.
POWER TRANSISTOR
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
2N6676
450
2N6677
550
2N6678
650
UNITS
V
C
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEV
CEO
EBO
V
V
300
350
400
V
V
8.0
Continuous Collector Current
Peak Collector Current
I
15
20
A
C
I
A
CM
Continuous Base Current
Power Dissipation
I
5.0
A
B
P
175
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +200
1.0
°C
°C/W
J
stg
Θ
JC
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=Rated V
=Rated V
=8.0V
, V
=1.5V
=1.5V, T =100°C
100
1.0
2.0
μA
CEV
CEV
EBO
CE
CE
EB
CEV BE(off)
, V
CEV BE(off)
mA
mA
V
C
BV
BV
BV
I =200mA (2N6676)
300
350
400
CEO
CEO
C
I =200mA (2N6677)
V
C
I =200mA (2N6678)
V
CEO
C
V
V
I =15A, I =3.0A
1.5
1.5
V
CE(SAT)
BE(SAT)
FE
C
B
I =15A, I =3.0A
V
C
B
h
V
=3.0V, I =15A
8.0
3.0
CE
CB
CE
C
C
V
V
=10V, I =0, f=1.0MHz
500
10
pF
MHz
μs
ob
E
f
t
t
t
t
=10V, I =1.0A, f=5.0MHz
t
C
0.1
0.6
2.5
0.5
d
r
V
=200V, I =15A, I =I =3.0A
B1 B2
CC
C
μs
t =20μs, Duty Cycle≤2.0%
p
μs
s
f
V
≈6.0V, R =13.5Ω
BB
L
μs
R0 (26-July 2010)
2N6676
2N6677
2N6678
NPN SILICON
POWER TRANSISTOR
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R0 (26-July 2010)
www.centralsemi.com
相关型号：
2N6677
Power Bipolar Transistor, 15A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
VISHAY
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