2N6552LEADFREE [CENTRAL]
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin,;
| 型号： | 2N6552LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin, 局域网 放大器 晶体管 |
| 文件： | 总2页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6551 2N6552 2N6553
2N6554 2N6555 2N6556
NPN
PNP
www.centralsemi.com
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6551, 2N6554
series types are complementary silicon transistors
manufactured by the epitaxial planar process, designed
for general purpose audio amplifier applications.
MARKING: FULL PART NUMBER
TO-202 CASE
2N6551 2N6552 2N6553
SYMBOL 2N6554 2N6555 2N6556
MAXIMUM RATINGS: (T =25°C)
UNITS
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
60
80
100
CBO
CEO
EBO
60
80
100
V
V
5.0
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
I
1.0
A
C
I
2.0
A
CM
I
0.1
A
B
P
2.0
W
D
D
Power Dissipation (T =25°C)
P
10
W
C
Operating and Storage Junction Temperature
T , T
-65 to +150
62.5
12.5
°C
°C/W
°C/W
J
stg
Thermal Resistance
Θ
JA
JC
Thermal Resistance
Θ
2N6551
2N6554
MIN MAX
2N6552
2N6555
MIN MAX
2N6553
2N6556
MIN MAX
ELECTRICAL CHARACTERISTICS: (T =25°C)
A
SYMBOL
TEST CONDITIONS
UNITS
I
I
I
I
V
V
V
V
=40V
=60V
=80V
=4.0V
-
100
-
-
100
-
-
-
nA
CBO
CBO
CBO
EBO
CB
CB
CB
EB
-
-
-
-
-
-
nA
nA
nA
V
-
-
-
-
100
100
-
-
100
-
-
100
-
BV
BV
BV
l =100μA
60
60
5.0
-
80
80
5.0
-
100
100
5.0
-
CBO
CEO
EBO
C
l =1.0mA
-
-
-
V
C
l =100μA
-
-
-
V
E
V
V
V
l =250mA, I =10mA
0.5
1.0
1.2
-
0.5
1.0
1.2
-
0.5
1.0
1.2
-
V
CE(SAT)
CE(SAT)
BE(ON)
FE
C
B
l =1.0A, I =100mA
-
-
-
V
C
B
V
=5.0V, I =250mA
-
-
-
V
CE
CE
CE
CE
CE
CE
CB
C
h
h
h
h
V
V
V
V
V
V
=1.0V, I =10mA
60
60
60
C
=1.0V, I =50mA
80 300
80 300
80 300
FE
C
=1.0V, I =250mA
60
25
-
-
60
25
-
-
60
25
-
-
FE
C
=1.0V, I =500mA
FE
C
f
=5.0V, l =100mA, f=20MHz
75 375
18
75 375
18
75 375
18
MHz
T
C
C
=20V, l =0, f=1.0MHz
-
-
-
pF
ob
E
R1 (23-January 2012)
2N6551 2N6552 2N6553
2N6554 2N6555 2N6556
NPN
PNP
COMPLEMENTARY
SILICON TRANSISTORS
TO-202 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
Tab is common to pin 3
MARKING:
FULL PART NUMBER
R1 (23-January 2012)
www.centralsemi.com
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