2N5323LEADFREE [CENTRAL]

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN;
2N5323LEADFREE
型号: 2N5323LEADFREE
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

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2N5320 2N5321 NPN  
2N5322 2N5323 PNP  
www.centralsemi.com  
COMPLEMENTARY SILICON  
SWITCHING TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N5320, 2N5322  
series types are complementary silicon power  
transistors manufactured by the epitaxial planar process,  
designed for amplifier and switching applications.  
MARKING: FULL PART NUMBER  
TO-39 CASE  
2N5320  
2N5322  
100  
2N5321  
2N5323  
75  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
CBO  
V
100  
75  
75  
50  
V
V
CEV  
CEO  
EBO  
V
V
6.0  
5.0  
V
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
2.0  
1.0  
10  
A
C
I
A
B
P
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
175  
°C  
°C/W  
°C/W  
J
stg  
Θ
JA  
JC  
Thermal Resistance  
Θ
17.5  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
2N5320  
2N5322  
2N5321  
2N5323  
SYMBOL  
TEST CONDITIONS  
MIN  
-
MAX  
0.5  
MIN  
-
MAX  
-
UNITS  
μA  
I
I
I
I
V
V
V
V
=80V  
=60V  
=5.0V  
=4.0V  
CBO  
CBO  
EBO  
EBO  
CB  
CB  
EB  
EB  
-
-
-
-
5.0  
μA  
μA  
μA  
V
0.1  
-
-
-
-
-
0.5  
BV  
BV  
BV  
I =100μA, V =1.5V  
BE  
100  
75  
6.0  
-
-
75  
50  
5.0  
-
-
CEV  
CEO  
C
I =10mA  
-
-
-
-
V
C
I =100μA  
V
EBO  
E
V
V
V
V
V
I =500mA, I =50mA (2N5320)  
0.5  
-
-
V
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
B
I =500mA, I =50mA (2N5321)  
-
-
0.8  
-
V
C
B
I =500mA, I =50mA (2N5322)  
-
0.7  
-
-
V
C
B
I =500mA, I =50mA (2N5323)  
-
-
1.2  
1.4  
250  
-
V
C
B
V
=4.0V, I =500mA  
-
1.1  
150  
-
-
V
CE  
CE  
CE  
CE  
C
h
h
V
V
V
=4.0V, I =500mA  
30  
10  
50  
40  
-
C
=2.0V, I =1.0A  
FE  
C
f
=4.0V, I =50mA, f=10MHz  
-
50  
-
MHz  
T
C
R4 (11-June 2012)  
2N5320 2N5321 NPN  
2N5322 2N5323 PNP  
COMPLEMENTARY SILICON  
SWITCHING TRANSISTORS  
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MAX  
UNITS  
t
t
t
t
V
V
V
V
=30V, I =500mA, I =50mA (2N5320, 2N5321)  
80  
ns  
on  
on  
off  
off  
CC  
CC  
CC  
CC  
C
B1  
=30V, I =500mA, I =50mA (2N5322, 2N5323)  
100  
800  
1.0  
ns  
ns  
μs  
C
B1  
=30V, I =500mA, I =I =50mA (2N5320, 2N5321)  
C
B1 B2  
=30V, I =500mA, I =I =50mA (2N5322, 2N5323)  
C
B1 B2  
TO-39 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
1) Emitter  
2) Base  
3) Collector  
MARKING: FULL PART NUMBER  
R4 (11-June 2012)  
www.centralsemi.com  

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