2N3725 [CENTRAL]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | 2N3725 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3724
2N3725
2N3725A
www.centralsemi.com
DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR 2N3724, 2N3725,
2N3725A types are Silicon NPN Planar Epitaxial
Transistors designed for high voltage, high current,
high speed switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
2N3724
50
30
2N3725 2N3725A
UNITS
V
V
V
A
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
V
V
V
80
50
80
50
CBO
CEO
EBO
6.0
1.2
I
C
I
1.75
0.8
3.5
A
CM
P
P
0.8
3.5
1.0
5.0
W
W
°C
D
D
Power Dissipation (T =25°C)
C
Operating and Storage Junction Temperature
T , T
-65 to +200
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
2N3724
2N3725
MIN MAX
2N3725A
MIN MAX
SYMBOL
TEST CONDITIONS
MIN MAX
UNITS
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
=50V
=80V
=40V
=40V, T =100°C
=60V
=60V, T =100°C
=50V
=80V
-
-
-
-
-
-
-
-
10
-
1.7
120
-
-
10
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
10
-
B
B
CE
CE
CB
CB
CB
CB
CE
CE
CBO
CBO
CBO
CBO
CES
CES
-
-
A
1.7
120
-
10
-
-
-
-
0.25
0.26
0.40
0.52
0.80
0.95
0.76
0.86
1.1
1.1
1.5
1.7
0.5
50
-
10
-
-
A
BV
BV
BV
BV
I =10µA
50
50
30
6.0
-
-
-
-
-
-
-
-
80
80
50
6.0
-
-
-
-
-
-
-
-
80
80
50
6.0
-
-
-
-
-
-
-
-
-
CBO
CES
CEO
EBO
C
I =10µA
-
-
-
C
I =10mA
-
-
C
I =10µA
E
V
V
V
V
V
V
V
V
V
V
V
V
I =10mA, I =1.0mA
0.25
0.20
0.32
0.42
0.65
0.75
0.76
0.86
1.1
1.1
1.5
1.7
0.25
0.26
0.40
0.52
0.80
0.90
0.76
0.86
1.0
1.1
1.3
1.4
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
BE(SAT)
BE(SAT)
BE(SAT)
BE(SAT)
C
B
B
B
B
I =100mA, I =10mA
C
I =300mA, I =30mA
C
I =500mA, I =50mA
C
I =800mA, I =80mA
C
B
I =1.0A, I =100mA
C
B
I =10mA, I =1.0mA
C
B
B
B
B
I =100mA, I =10mA
C
I =300mA, I =30mA
-
-
C
I =500mA, I =50mA
0.80
-
-
0.80
-
-
0.80
-
0.90
V
V
V
C
I =800mA, I =80mA
C
B
I =1.0A, I =100mA
C
B
R1 (5-December 2010)
2N3724
2N3725
2N3725A
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
2N3724
MIN MAX MIN MAX
30 30
60 150 60 150
2N3725
2N3725A
MIN MAX
SYMBOL
TEST CONDITIONS
UNITS
h
h
h
h
h
h
h
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=1.0V, I =10mA
-
-
30
-
FE
FE
FE
FE
FE
FE
FE
CE
CE
CE
CE
CE
CE
CE
CE
CB
EB
CC
CC
CC
CC
CC
CC
CC
CC
C
=1.0V, I =100mA
60 150
C
=1.0V, I =300mA
40
35
25
30
-
-
-
-
-
40
35
20
25
-
-
-
-
-
40
-
C
=1.0V, I =500mA
35
-
C
=2.0V, I =800mA
25
-
C
=5.0V, I =1.0A
25
-
C
=5.0V, I =1.5A
-
-
20
-
C
f
C
C
=10V, I =50mA, f=100MHz
300
-
300
-
300
-
MHz
pF
pF
ns
ns
ns
ns
ns
ns
ns
T
ob
ib
C
=10V, I =0, f=1.0MHz
-
-
-
-
-
-
-
-
-
-
12
55
10
30
35
50
25
60
-
-
-
-
-
-
-
-
-
-
-
10
55
10
30
35
50
25
60
-
-
-
-
-
-
-
-
-
-
-
10
55
10
30
35
50
25
60
50
50
E
=0.5V, I =0, f=1.0MHz
C
t
t
t
t
t
t
t
t
=30V, I =500mA, I =50mA
d
r
on
s
f
off
on
off
C B1
=30V, I =500mA, I =50mA
B1
C
=30V, I =500mA, I =50mA
C
B1
B1 B2
B1 B2
B1 B2
=30V, I =500mA, I =I =50mA
C
=30V, I =500mA, I =I =50mA
C
=30V, I =500mA, I =I =50mA
C
=30V, I =1.0A, I =I =100mA
C
C
B1 B2
=30V, I =1.0A, I =I =100mA
B1 B2
-
-
ns
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (5-December 2010)
www.centralsemi.com
相关型号：
2N3726LEADFREE
Small Signal Bipolar Transistor, 0.3A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, TO-78
CENTRAL
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