PS9308L2-E3 [CEL]
2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER;型号: | PS9308L2-E3 |
厂家: | CALIFORNIA EASTERN LABS |
描述: | 2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER 栅极驱动 双极性晶体管 输出元件 |
文件: | 总22页 (文件大小:992K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
A Business Partner of Renesas Electronics Corporation.
reliminary
Data Sheet
R08DS0048EJ0200
Rev.2.00
PS9308L, PS9308L2
2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER
Sep 27, 2013
DESCRIPTION
The PS9308L and PS9308L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo
diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9308L and PS9308L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9308L2 has 8 mm
creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9308L and PS9308L2 are designed specifically for high common mode transient immunity (CMR) and high
switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9308L is lead bending type (Gull-wing) for surface mounting.
The PS9308L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
PIN CONNECTION
•
•
•
•
•
•
•
•
•
Long creepage distance (8 mm MIN.: PS9308L2)
Half size of 8-pin DIP
(Top View)
6
5 4
Peak output current (2.0 A MAX., 1.0 A MIN.)
High speed switching (tPLH, tPHL = 0.25 μs MAX.)
UVLO (Under Voltage Lock Out) protection with hysteresis
High common mode transient immunity (CMH, CML = ±25 kV/μs MIN.)
Embossed tape product : PS9308L-E3, PS9308L2-E3 : 2 000 pcs/reel
Pb-Free product
1. Anode
2. NC
3. Cathode
4. VEE
5. V
O
6. VCC
Safety standards
1
2
3
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• SEMKO approved (EN 60065, EN 60950)
• DIN EN60747-5-5 (VDE0884-5) approved (Option)
<R>
APPLICATIONS
•
•
•
IGBT, Power MOS FET Gate Driver
Industrial inverter
IH (Induction Heating)
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 1 of 20
5
5
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
Lead Bending Type (Gull-wing) For Surface Mount
PS9308L
4.58 0.ꢁ
(0.82)
9.7 0.ꢁ
7.62
ꢀ.27
0.8 0.25
0.4 0.ꢀ
0.25 M
Lead Bending Type (Gull-wing) For Long Creepage Distance (Surface Mount)
PS9308L2
4.58 0.ꢁ
(0.82)
ꢀꢀ.5 0.ꢁ
7.62
ꢀ.27
0.75 0.25
0.4 0.ꢀ
0.25 M
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 2 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
PHOTOCOUPLER CONSTRUCTION
Parameter
PS9308L
PS9308L2
Air Distance (MIN.)
7 mm
7 mm
8 mm
8 mm
Outer Creepage Distance (MIN.)
Isolation Distance (MIN.)
0.4 mm
0.4 mm
MARKING EXAMPLE
<R>
Company Initial
Type Number
Assembly Lot
R
9ꢁ08
N2ꢁꢀ
No. ꢀ pin Mark
N
2
ꢁꢀ
Week Assembled
Year Assembled
(Last ꢀ Digit)
Rank Code
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 3 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
<R>
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
Packing Style
Safety Standard
Approval
Application
Part Number*1
PS9308L
PS9308L-AX
Pb-Free
20 pcs (Tape 20 pcs cut) Standard
PS9308L
PS9308L-E3
PS9308L-E3-AX
(Ni/Pd/Au)
Embossed Tape 2 000
pcs/reel
products
(UL, CSA,
PS9308L2
PS9308L2-AX
20 pcs (Tape 20 pcs cut) SEMKO
PS9308L2
PS9308L2-E3
PS9308L2-E3-AX
Embossed Tape 2 000
pcs/reel
approved)
PS9308L-V
PS9308L-V-AX
20 pcs (Tape 20 pcs cut) DIN EN 60747-5-5 PS9308L
PS9308L-V-E3
PS9308L-V-E3-AX
Embossed Tape 2 000
pcs/reel
(VDE 0884-5)
approved
(Option)
PS9308L2-V
PS9308L2-V-AX
20 pcs (Tape 20 pcs cut)
Embossed Tape 2 000
pcs/reel
PS9308L2
PS9308L2-V-E3 PS9308L2-V-E3-AX
Note: *1. For the application of the Safety Standard, following part number should be used.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 4 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
IF
Ratings
25
Unit
mA
A
Diode
Forward Current
Peak Transient
IF (TRAN)
1.0
Forward Current
(Pulse Width < 1 μs)
Reverse Voltage
VR
5
V
A
Detector High Level Peak
Output Current *1
IOH (PEAK)
2.0
Low Level Peak
Output Current *1
IOL (PEAK)
2.0
A
Supply Voltage
(VCC−VEE
)
0 to 35
0 to VCC
250
V
V
Output Voltage
Power Dissipation *2
Isolation Voltage *3
Total Power Dissipation *4
Operating Frequency *5
Operating Ambient Temperature
Storage Temperature
VO
PC
BV
PT
f
mW
Vr.m.s.
mW
kHz
°C
5 000
300
50
TA
Tstg
−40 to +110
−55 to +125
°C
Notes: *1. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2%
*2. Reduced to 4.8 mW/°C at TA = 70°C or more.
*3. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-3 shorted together, 4-6 shorted together.
*4. Reduced to 5.4 mW/°C at TA = 70°C or more.
*5. IOH (PEAK) ≤ 2.0 A (≤ 0.3 μs), IOL (PEAK) ≤ 2.0 A (≤ 0.3 μs)
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
(VCC−VEE
IF (ON)
MIN.
15
TYP. MAX.
Unit
V
)
30
Forward Current (ON)
7
10
16
0.8
110
mA
V
Forward Voltage (OFF)
VF (OFF)
TA
−2
−40
Operating Ambient Temperature
°C
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 5 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
ELECTRICAL CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
VEE = GND, unless otherwise specified)
Parameter
Symbol
VF
Conditions
IF = 10 mA, TA = 25°C
VR = 3 V, TA = 25°C
f = 1 MHz, VF = 0 V, TA = 25°C
VO = (VCC − 4 V) *2
MIN.
TYP.*1
MAX.
1.8
Unit
V
Diode
Forward Voltage
Reverse Current
Input Capacitance
1.2
1.56
IR
10
μA
pF
A
CIN
30
Detector High Level Output Current
IOH
1.0
1.5
1.0
1.5
1.5
VO = (VCC − 15 V) *3
VO = (VEE + 2.5 V) *2
VO = (VEE + 15 V) *3
IO = −100 mA *4
Low Level Output Current
IOL
1.5
A
High Level Output Voltage
Low Level Output Voltage
High Level Supply Current
Low Level Supply Current
UVLO Threshold
VOH
VOL
ICCH
ICCL
VCC − 3.0 VCC − 1.3
V
V
IO = 100 mA
0.1
1.2
1.2
0.5
2.0
IF = 10 mA, VO = open
VF = 0 to 0.8 V, VO = open
mA
mA
V
2.0
VUVLO+ Vo > 5V, IF = 10 mA
10.8
9.5
12.3
11.0
1.3
13.4
12.5
VUVLO-
UVLO Hysteresis
UVLOHYS
0.4
Coupled Threshold Input Current
IFLH
IO = 0 mA, VO > 5 V
IO = 0 mA, VO < 5 V
1.8
5.0
mA
V
(L → H)
Threshold Input Voltage
VFHL
0.8
(H → L)
Notes: *1. Typical values at TA = 25°C.
*2. Maximum pulse width = 50 μs, Maximum duty cycle = 0.5%.
*3. Maximum pulse width = 10 μs, Maximum duty cycle = 0.2%.
*4. VOH is measured with the DC load current in this testing. (Maximum pulse width = 2 ms, Maximum duty cycle
= 20%)
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 6 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
<R>
SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
VEE = GND, unless otherwise specified)
Parameter
Symbol
tPLH
Conditions
Rg = 10 Ω, Cg = 10 nF,
f = 10 kHz,
MIN.
TYP.*1
MAX.
0.25
0.25
0.1
Unit
μs
μs
Propagation Delay Time (L → H)
Propagation Delay Time (H → L)
Pulse Width Distortion (PWD)
0.08
tPHL
0.10
|tPHL−tPLH
|
Duty Cycle = 50%,
0.02
μs
Propagation Delay Time
(Difference Between Any Two
Products)
tPHL−tPLH IF = 10 mA
−0.1
0.1
μs
Rise Time
Fall Time
tr
tf
50
50
ns
ns
Common Mode Transient
Immunity at High Level Output
|CMH|
TA = 25°C, IF = 10 mA,
VCC = 30 V, VCM = 1.5 kV,
VO (MIN.) = 26 V
25
25
kV/μs
Common Mode Transient
|CML|
TA = 25°C, IF = 0 mA,
kV/μs
Immunity at Low Level Output
VCC = 30 V, VCM = 1.5 kV,
VO (MAX.) = 1 V
Note: *1. Typical values at TA = 25°C.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 7 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
TEST CIRCUIT
Fig. 1 IOH Test Circuit
Fig. 2 IOL Test Circuit
1
2
3
6
5
4
1
2
3
6
5
4
1.0μF
4 V
1.0μF
IOL
VCC = 15 to 30 V
IOH
2.5 V
V
CC
=
15 to 30 V
I =
7 to 16 mA
F
SHIELD
SHIELD
Fig. 3 VOH Test Circuit
Fig. 4 VOL Test Circuit
1
6
1
2
3
6
1.0μF
μ
V
1.0 F
2
3
5
4
5
4
VCC = 15 to 30 V
VOH
OL
V
CC
=
100 mA
15 to 30 V
I =
7 to 16 mA
F
100 mA
SHIELD
SHIELD
Fig. 5 UVLO Test Circuit
Fig. 6 IFLH Test Circuit
1
6
1
2
3
6
IF = 10 mA
1.0
μ
F
1.0μF
2
3
5
4
5
4
IF
VCC
V
O
> 5 V
VO > 5 V
VCC
=
15 to 30 V
SHIELD
SHIELD
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 8 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
Fig. 7 tPLH, tPHL, t
r
, tf Test Circuit and Wave Forms
1
2
3
6
I
F
1.0μF
tr
t
f
I = 10 mA
F
5
4
V
CC = 15 to 30 V
VO
90%
50%
10%
10 Ω
10 nF
10 kHz
50% DUTY
CYCLE
V
OUT
SHIELD
tPLH
t
PHL
Fig. 8 CMR Test Circuit and Wave Forms
IF
A
B
1
2
3
6
V
CM
V
Δ
CM
δ
δ
V
t
1.0μF
=
5
4
t
VCC = 30 V
0 V
V
O
Δ
t
V
OH
V
O
26 V
SHIELD
(Switch A: I
F
= 10 mA)
= 0 mA)
1 V
V
O
VOL
(Switch B: I
F
VCM = 1.5 kV
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 9 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
<R>
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DETECTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
250
200
150
100
50
400
350
300
250
200
150
100
50
100
(°C)
0
100
(°C)
0
25
50
75
125
2.4
5
25
50
75
125
Ambient Temperature T
A
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
THRESHOLD INPUT CURRENT vs.
AMBIENT TEMPERATURE
100
10
5
4
3
2
1
0
V
V
CC = 30 V,
> 5 V,
O
IO
= 0 mA
T
A
= +110°C
+100°C
+85°C
+50°C
+25°C
0°C
1
0.1
−40°C
0.01
−40 −20
0
20
40
60
80 100
1.0
1.2
1.4
1.6
1.8
2.0
(V)
2.2
Forward Voltage V
F
Ambient Temperature T (°C)
A
OUTPUT VOLTAGE vs.
FORWARD CURRENT
HIGH LEVEL OUTPUT VOLTAGE − SUPPLY
VOLTAGE vs. AMBIENT TEMPERATURE
35
30
25
20
15
10
5
0.0
V
CC = 30 V
V
F
CC = 30 V,
= 10 mA,
I
I
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
O
= −100 mA
0
0
1
2
3
4
−40 −20
0
20
40
60
80 100
Ambient Temperature T
A
(°C)
Forward Current I (mA)
F
Remark The graphs indicate nominal characteristics.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 10 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
HIGH LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
LOW LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
0
−1
−2
−3
−4
−5
−6
6
5
4
3
2
1
V
CC = 30 V,
= 0 mA
V
CC = 30 V,
= 10 mA
IF
IF
V = VCC−4 V
O
V = VEE+15 V
O
V = VCC−15 V
O
VO = VEE+2.5 V
0
−40 −20
0
20
40
60
80 100
(°C)
−40 −20
0
20
40
60
80 100
Ambient Temperature T
A
Ambient Temperature T (°C)
A
SUPPLY CURRENT vs.
AMBIENT TEMPERATURE
LOW LEVEL OUTPUT VOLTAGE vs.
AMBIENT TEMPERATURE
2.0
1.5
1.0
0.5
0.0
0.5
0.4
0.3
0.2
0.1
0
V
CC = 30 V,
V
CC = 30 V,
IF
= 0 mA,
VO
= OPEN
I
O
= 100mA
I
CCH (I
F
= 10 mA)
= 0 mA)
I
CCL (I
F
−40 −20
0
20
40
60
80 100
(°C)
−40 −20
0
20
40
60
80 100
(°C)
Ambient Temperature T
A
Ambient Temperature T
A
HIGH LEVEL OUTPUT VOLTAGE − SUPPLY
VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT
LOW LEVEL OUTPUT VOLTAGE vs.
LOW LEVEL OUTPUT CURRENT
5.0
4.0
3.0
2.0
1.0
0.0
0.0
V
IF
CC = 30 V,
= 0 mA
V
IF
CC = 30 V,
= 10 mA
1.0
2.0
T = 110°C
A
TA = 25°C
TA
= −40°C
3.0
TA = −40°C
4.0
TA
= 110°C
−1.0
TA
= 25°C
−5.0
1.0
1.5
2.0
0.0
0.5
−2.0
−1.5
−0.5
0.0
High Level Output Current IOH (A)
Low Level Output Current IOL (A)
Remark The graphs indicate nominal characteristics.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 11 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. AMBIENT TEMPERATURE
SUPPLY CURRENT vs.
SUPPLY VOLTAGE
250
2.0
1.5
1.0
0.5
0.0
V
R
CC = 30 V, I
F
= 10 mA,
= 10 nF,
VO = OPEN
g
= 10 Ω, C
g
f = 10 kHz, Duty cycle = 50%
200
150
100
50
I
CCH (I
F
= 10 mA)
= 0 mA)
I
CCL (I
F
t
PHL
t
PLH
PWD
60 80 100
(°C)
0
40
−40 −20
0
20
15
20
25
30
Supply Voltage VCC (V)
Ambient Temperature T
A
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. FORWARD CURRENT
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. SUPPLY VOLTAGE
250
250
V
C
CC = 30 V, R
= 10 nF, f = 10 kHz,
Duty Cycle = 50%
g
= 10 Ω,
I
C
F
= 10 mA, R
= 10 nF, f = 10 kHz,
Duty Cycle = 50%
g
= 10 Ω,
g
g
200
150
100
50
200
150
100
50
t
PLH
t
PHL
t
PHL
t
PLH
PWD
PWD
0
0
7
10
Forward Current I
13
(mA)
16
15
20
25
30
F
Supply Voltage VCC (V)
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. LOAD CAPACITANCE
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. LOAD RESISTANCE
250
250
V
C
CC = 30 V, I
= 10 nF, f = 10 kHz,
Duty Cycle = 50%
F
= 10 mA,
V
R
CC = 30 V, I
= 10 Ω, f = 10 kHz,
Duty Cycle = 50%
F
= 10 mA,
g
g
200
150
100
50
200
150
100
50
t
PHL
t
PHL
t
PLH
t
PLH
PWD
PWD
0
0
0
10
20
30
40
50
30
Load Capacitance C
40
(nF)
50
0
10
20
g
Load Resistance R (Ω)
g
Remark The graphs indicate nominal characteristics.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 12 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
POWER CONSUMPTION PER CYCLE vs.
OUTPUT VOLTAGE vs. SUPPLY VOLTAGE
LOAD RESISTANCE
ꢀ4
ꢀ2
ꢀ0
8
8
I
F
= ꢀ0 mA,
EE = GND
μ
V
7
6
5
4
ꢁ
2
ꢀ
0
Qg = ꢀ000 nC
Qg = 500 nC
Qg = ꢀ00 nC
UVLOHYS
6
4
VUVLO+
V
UVLO−
(ꢀꢀ.0 V)
(ꢀ2.ꢁ V)
2
0
0
5
ꢀ0
ꢀ5
20
0
ꢀ0
20
ꢁ0
40
50
Supply Voltage VCC – VEE (V)
Load Resistance R
g
(Ω)
Remark The graphs indicate nominal characteristics.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 13 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
<R>
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Tape)
2.0 0.ꢀ
+0.ꢀ
4.0 0.ꢀ
ꢀ.5
–0
4.5 MAX.
+0.ꢀ
ꢀ.5
–0
0.ꢁ5
8.0 0.ꢀ
5.08 0.ꢀ
Tape Direction
PS9ꢁ08L-Eꢁ
Outline and Dimensions (Reel)
2.0 0.5
2.0 0.5
ꢀꢁ.0 0.2
R ꢀ.0
2ꢀ.0 0.8
ꢀ7.5 ꢀ.0
2ꢀ.5 ꢀ.0
Packing: 2 000 pcs/reel
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 14 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
Outline and Dimensions (Tape)
2.0 0.ꢀ
+0.ꢀ
4.0 0.ꢀ
ꢀ.5
–0
4.5 MAX.
+0.ꢀ
2.0
–0
8.0 0.ꢀ
0.ꢁ5
5.08 0.ꢀ
Tape Direction
PS9ꢁ08L2-Eꢁ
Outline and Dimensions (Reel)
2.0 0.5
2.0 0.5
ꢀꢁ.0 0.2
R ꢀ.0
2ꢀ.0 0.8
25.5 ꢀ.0
29.5 ꢀ.0
Packing: 2 000 pcs/reel
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 15 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
D
A
Part Number
PS9ꢁ08L
Lead Bending
A
B
C
D
lead bending type (Gull-wing)
for surface mount
9.2
ꢀ.27
0.8
0.8
2.2
lead bending type (Gull-wing)
for long creepage distance (surface mount)
ꢀ0.2
ꢀ.27
2.2
PS9ꢁ08L2
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 16 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
NOTES ON HANDLING (UNIT: mm)
1. Recommended soldering conditions
(1) Infrared reflow soldering
•
•
•
•
•
•
Peak reflow temperature
260°C or below (package surface temperature)
Time of peak reflow temperature
Time of temperature higher than 220°C
Time to preheat temperature from 120 to 180°C
Number of reflows
10 seconds or less
60 seconds or less
120 ± ±30 s
Three
Flux
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
Recommended Temperature Profile of Infrared Reflow
(heating)
to ꢀ0 s
260°C MAX.
220°C
to 60 s
ꢀ80°C
ꢀ20°C
ꢀ20 ꢁ0 s
(preheating)
Time (s)
(2) Wave soldering
•
•
•
•
•
Temperature
Time
260°C or below (molten solder temperature)
10 seconds or less
Preheating conditions 120°C or below (package surface temperature)
Number of times
Flux
One (Allowed to be dipped in solder including plastic mold portion.)
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
•
•
•
Peak Temperature (lead part temperature) 350°C or below
Time (each pins)
3 seconds or less
Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
Fluxes
•
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 17 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output
transistor may enter the on state, even if the voltage is within the absolute maximum ratings.
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 1.0 μF is used between VCC and GND near device. Also, ensure that the distance
between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close
to the input block pattern of the photocoupler.
If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT
output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics.
(If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to
the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the
range of the recommended operating conditions, and be sure to thoroughly evaluate operation.)
(3) Pin 2 (which is an NC*1 pin) can either be connected directly to the GND pin on the LED side or left open.
Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may
degrade the internal noise environment of the device.
Note: *1. NC: Non-Connection (No Connection).
3. Make sure the rise/fall time of the forward current is 0.5 μs or less.
4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/μs or less.
5. Avoid storage at a high temperature and high humidity.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 18 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
<R>
Parameter
Symbol
Spec.
Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1)
40/110/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.6 × UIORM., Pd < 5 pC
UIORM
Upr
Vpeak
Vpeak
1 130
1 808
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM., Pd < 5 pC
Highest permissible overvoltage
Upr
2 119
Vpeak
Vpeak
UTR
8 000
2
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11))
Material group (DIN EN 60664-1 VDE0110 Part 1)
Storage temperature range
CTI
175
III a
Tstg
TA
–55 to +125
–40 to +110
°C
°C
Operating temperature range
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
VIO = 500 V dc at TA MAX. at least 100°C
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Tsi
Isi
Psi
175
400
700
°C
mA
mW
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
V
IO = 500 V dc at TA = Tsi
Ris MIN.
109
Ω
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 19 of 20
A Business Partner of Renesas Electronics Corporation.
PS9308L, PS9308L2
Chapter Title
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Caution GaAs Products
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
ꢀ. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0048EJ0200 Rev.2.00
Sep 27, 2013
Page 20 of 20
Revision History
PS9308L, PS9308L2 Data Sheet
Description
Summary
Rev.
Date
Page
−
p.1
p.3
p.4
p.7
1.00
2.00
Aug 31, 2011
Sep 27, 2013
First edition issued
Modification of FEATURES
Modification of MARKING EXAMPLE
Modification of ORDERING INFORMATION
Modification of SWITCHING CHARACTERISTICS
pp.10 to 13 Addition of TYPICAL CHARACTERISTICS
pp.14 to 15 Modification of TAPING SPECIFICATIONS
p.19
Modification of SPECIFICATION OF VDE MARKS LICENCE DOCUMENT
All trademarks and registered trademarks are the property of their respective owners.
C - 1
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
[Colophon 2.2]
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