NE97833 [CEL]
PNP SILICON HIGH FREQUENCY TRANSISTOR; PNP硅高频三极管
| 型号： | NE97833 |
| 厂家： | 
CALIFORNIA EASTERN LABS |
| 描述： | PNP SILICON HIGH FREQUENCY TRANSISTOR |
| 文件： | 总6页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP SILICON HIGH
FREQUENCY TRANSISTOR
NE97833
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 5.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE02133
• HIGH INSERTION POWER GAIN:
2
|S21E| = 10 dB at 1 GHz
33 (SOT 23 STYLE)
DESCRIPTION
NEC’s NE97833 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97833 offers
excellent performance and reliability at low cost.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE97833
2SA1978
33
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth Product at VCE = -10 V, IC = -15 mA
GHz
4.0
5.5
NF
Noise Figure at VCE = -10 V, IC = -3 mA
dB
dB
2.0
10.0
40
3.0
2
|S21E|
Insertion Power Gain at VCE = -10 V, IC = -15 mA, f = 1 GHz
Forward Current Gain Ratio at VCE = -10 V, IC = -15 mA
Collector Cutoff Current at VCB = -10 V, IE = 0
Emitter Cutoff Current at VBE = -2 V, IC = 0
Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz
Total Power Dissipation
8.0
20
hFE
ICBO
IEBO
CRE2
PT
100
-0.1
-0.1
1.0
µA
µA
pF
0.5
mW
200
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE97833
DC CURRENT GAINS VS.
COLLECTOR CURRENT
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
VCBO
VCEO
VEBO
IC
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
UNITS
RATINGS
100
V
-20
-12
V
V
-3
V
V
V
CE = -3 V
CE = -2 V
CE = -1 V
mA
°C
-50
TJ
Junction Temperature
Storage Temperature
150
TSTG
°C
-65 to +200
10
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
1
-0.1
-1.0
-10
-100
-1000
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Collector Current, IC (mA)
DC POWER DERATING CURVES
INSERTION GAIN vs. FREQUENCY
400
FREE AIR
30
20
300
200
V
CE = -10 V
IC = -15 mA
10
0
V
I
CE = 1 V
C = 5 mA
NE97833
100
-10
0
0
50
100
150
200
100
200 300
500
1000
3000
Ambient Temperature, TA (°C)
Frequency, f (MHz)
GAIN BANDWIDTH
INSERTION GAIN
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
14
12
10
8
14
f = 1 GHz
f = 1 GHz
12
10
V
CE = -10 V
VCE = -10 V
8
6
6
V
CE = -3 V
V
CE = -3 V
4
4
V
CE = -1 V
V
CE = -1 V
2
0
2
0
1
100
10
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
NE97833
TYPICAL PERFORMANCE CURVES(TA = 25°C)
NOISE FIGURE VS.
COLLECTOR CURRENT
DC CURRENT GAIN VS.
COLLECTOR CURRENT
6
100
V
CE = -10 V
VCE = 10 V
f = 1 GHz
4
10
2
0
1.0
-100
-1000
-0.1
-10
10
1
-1.0
100
Collector Current, IC (mA)
Collector Current, IC (mA)
SWITCHING CHARACTERISTICS
VIN = 1 V
UNITS
PARAMETERS
UNITS
ns
TYP
1.10
0.77
0.40
0.79
tON (delay) Turn-on Delay Time
tr Rise Time
tOFF (delay) Turn-off Delay Time
Fall Time
ns
ns
tf
ns
SWITCHING TIME MEASUREMENT CIRCUIT
V
CC (-)
R
C1
R
C2
VIN
20 ns
R
L2
VOUT
t
r
tf
t
ON (delay)
tOFF (delay)
R
L1
R
S
V
IN
50 Ω
Sampling
V
BB (-)
VOUT
Oscilloscope
R
E
V
EE (+)
VIN = 1 v, VBB = -0.5 V, RC1 = RC2
RS
(Ω)
RC
(Ω)
RL1
(Ω)
RL2
(Ω)
RE
(Ω)
VEE
(V)
VCC
(V)
160
1 K
200
250
2.7 K
27
26.3
NE97833
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
90˚
1
0.8
1.5
0.6
S
21
2
45˚
135˚
0.4
3
4
5
0.2
S
12
10
20
50
-50
0.2
0.4
0.6 0.8
11
1
1.5
2
3
4
5
10 20
180˚
0˚
0.1 0.2 0.3 0.4 0.5
S
-20
-10
S
22
2.5
-5
-4
-0.2
-3
5.0
-0.4
NE97833
315˚
225˚
-2
VCE = -8 V, IC = -10 mA
-0.6
-1.5
-0.8
-1
270˚
VCE = -5 V, IC = -10 mA
FREQUENCY
S11
S21
S12
S22
K
MAG1
(GHz)
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
MAG
0.274
0.273
0.278
0.308
0.352
0.402
0.449
0.506
0.527
ANG
-149.2
-177.0
169.8
144.6
125.0
109.1
96.4
MAG
ANG
96.9
82.0
74.5
58.7
45.3
33.5
23.6
9.1
MAG
ANG
MAG
ANG
-30.9
-32.2
-34.5
-44.8
-59.4
-75.9
-91.0
(dB)
19.9
14.7
12.8
9.6
7.8
7.2
5.7
3.5
6.102
4.037
3.303
2.311
1.808
1.496
1.281
1.023
0.908
0.063
0.093
0.114
0.170
0.229
0.288
0.345
0.458
0.574
68.1
70.1
70.3
68.1
63.9
58.3
52.4
40.7
27.4
0.493
0.432
0.412
0.381
0.362
0.359
0.364
0.97
1.07
1.09
1.08
1.03
0.99
0.95
0.91
0.92
79.7
71.1
0.350 -113.5
0.246 -138.8
-1.8
2.0
VCE = -8 V, IC = -10 mA
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
0.252
0.240
0.243
0.272
0.316
0.369
0.418
0.479
0.503
-140.2
-171.6
173.7
145.9
125.3
109.0
96.4
6.426
4.270
3.496
2.445
1.911
1.582
1.353
1.076
0.950
98.5
83.5
76.0
60.5
47.2
35.6
25.5
10.7
-0.4
0.060
0.089
0.109
0.162
0.219
0.276
0.333
0.445
0.563
68.7
70.6
70.9
60.5
65.0
59.8
54.2
42.9
30.2
0.523 -29.0
0.463 -30.1
0.443 -32.3
0.515 -43.9
0.393 -55.2
0.388 -70.6
0.392 -85.0
0.379 -106.3
0.278 -127.3
0.95
1.05
1.08
1.11
1.02
0.98
0.94
0.90
0.90
20.3
15.4
13.4
9.8
8.4
7.6
6.1
3.8
2.3
79.9
71.7
VCE = -10 V, IC = -15 mA
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
0.555
0.399
0.348
0.314
0.342
0.393
0.446
0.515
0.529
-80.8
-121.8
-143.5
173.5
142.8
120.2
103.4
81.7
4.097
3.325
2.864
2.107
1.669
1.382
1.179
0.934
0.844
116.8
94.8
84.2
64.5
49.0
36.0
25.6
11.9
3.0
0.076
0.094
0.106
0.140
0.186
0.241
0.302
0.433
0.575
55.1
53.5
55.4
69.0
62.8
61.5
57.9
47.8
34.3
0.697 -28.4
0.600 -32.6
0.564 -35.2
0.411 -39.4
0.494 -56.1
0.490 -70.2
0.496 -83.7
0.484 -105.8
0.382 -128.7
0.65
0.89
1.00
1.07
1.08
1.00
0.93
0.87
0.90
17.3
15.5
14.3
10.2
7.8
7.4
5.9
3.3
1.7
69.6
VCE = -10 V, IC = -3 mA
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
0.214
0.215
0.221
0.254
0.300
0.352
0.402
0.463
0.489
-153.1
179.7
166.8
141.5
122.3
107.1
95.0
6.846
4.489
3.664
2.554
1.992
1.648
1.410
1.121
0.984
96.2
82.4
75.4
60.6
47.7
36.2
26.3
11.3
-0.2
0.058
0.087
0.108
0.163
0.220
0.276
0.331
0.440
0.555
73.2
74.0
73.7
70.6
66.0
60.4
54.6
43.4
31.0
0.506 -27.0
0.456 -27.9
0.439 -30.1
0.441 -41.8
0.393 -52.7
0.387 -68.0
0.389 -82.1
0.377 -102.6
0.277 -121.3
0.99
1.06
1.07
1.05
1.01
0.97
0.94
0.89
0.89
20.7
15.6
13.7
10.6
8.9
7.8
6.3
4.1
2.5
79.5
72.1
Note:
1. Gain Calculation:
2
1 + | ∆ |2 - |S11
|
2 - |S22
|
|S21
|S12
|
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.
∆ = S11 S22 - S21 S12
|S21
|
|
(
K
MAG =
MSG =
, K =
,
|S12
2 |S12
S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE97833
OUTLINE DIMENSIONS (Units in mm)
OUTLINE 33
RECOMMENDED P.C.B. LAYOUT
PACKAGE OUTLINE 33
(SOT-23)
+0.2
-0.3
2.4
2.8
2
2
0.95
2.9 ± 0.2
3
+0.10
-0.05
0.4
1.9
3
(ALL LEADS)
1.9
0.95
1
+0.2
-0.1
+0.10
-0.15
1.5
0.65
0.8
PIN CONNECTIONS
1
1. Emitter
2. Base
3. Collector
1.0
1.1 to 1.4
0.8
+0.10
-0.06
0 to 0.1
0.16
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKAGING
NE97833-T1B-A
3000
Tape & Reel
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
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RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -7/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
3-174
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
Mercury
< 1000 PPM
< 1000 PPM
< 100 PPM
< 1000 PPM
< 1000 PPM
< 1000 PPM
Not Detected
(*)
Not Detected
Cadmium
Hexavalent Chromium
PBB
Not Detected
Not Detected
Not Detected
Not Detected
PBDE
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
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suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
3-175
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