NE800296 [CEL]

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET;
NE800296
型号: NE800296
厂家: CALIFORNIA EASTERN LABS    CALIFORNIA EASTERN LABS
描述:

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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文件: 总4页 (文件大小:174K)
中文:  中文翻译
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