NE651R479A [CEL]

MEDIUM POWER GaAs HJ-FET; 中功率的GaAs HJ- FET

NE651R479A


型号：	NE651R479A
厂家：	CALIFORNIA EASTERN LABS
描述：	MEDIUM POWER GaAs HJ-FET 中功率的GaAs HJ- FET 晶体小信号场效应晶体管射频小信号场效应晶体管放大器
文件：	总11页 (文件大小：502K)
下载：	下载PDF数据表文档文件

NE651R479A-A

MEDIUM POWER GaAs HJ-FET

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27 CEL

NE651R479A-T1

0.4 W L-BAND POWER GaAs HJ-FET

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39 NEC

NE651R479A-T1-A

MEDIUM POWER GaAs HJ-FET

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32 CEL

NE661M04

NPN SILICON HIGH FREQUENCY TRANSISTOR

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31 CEL

NE661M04

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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78 NEC

NE661M04

NPN SILICON HIGH FREQUENCY TRANSISTOR

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31 CEL

NE661M04-T2

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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45 NEC

NE661M04-T2-A

NPN SILICON HIGH FREQUENCY TRANSISTOR

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11 CEL

NE661M04-T2-A

NPN SILICON HIGH FREQUENCY TRANSISTOR

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24 CEL

NE661M04-T2-A

TRANSISTOR,BJT,NPN,3.3V V(BR)CEO,12MA I(C),SOT-343VAR

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0 RENESAS

NE661M05

RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SUPER MINI MOLD, M05, 4 PIN

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0 NEC

NE661M05

RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SUPER MINI MOLD, M05, 4 PIN

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0 NEC

NE661M05

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINI MOLD, M05, 4 PIN

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0 RENESAS

NE661M05FB

RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SUPER MINI MOLD, M05, 4 PIN

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0 NEC

NE661M05FB

RF Small Signal Bipolar Transistor, 0.012A I(C), 1-Element, L Band, Silicon, NPN, THIN, SUPER MINI MOLD, M05, 4 PIN

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0 NEC

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