CSA1362 [CDIL]
LOW FREQUENCY POWER AMPLIFIER TRANSISTOR; 低频功率放大晶体管
| 型号： | CSA1362 |
| 厂家： | 
Continental Device India Limited |
| 描述： | LOW FREQUENCY POWER AMPLIFIER TRANSISTOR |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CSA1362
LOW FREQUENCY POWER AMPLIFIER TRANSISTOR
P–N–P transistor
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Marking
CSA1362GR = 62
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
–V
–V
–V
max.
max.
max.
max.
max
15
15
5
V
V
V
CBO
CEO
EBO
–I
800 mA
200 mW
150 ° C
C
Total power dissipation at T
Junction temperature
D.C. current gain
= 25°C
P
amb
tot
T
j
max.
–I = 100 mA; –V
C CE
= 1 V
h
min.
max.
120
400
FE
RATINGS (at T = 25°C unless otherwise specified)
A
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
–V
–V
–V
max.
max.
max.
max.
max
15
15
5
V
V
V
CBO
CEO
EBO
–I
800 mA
200 mW
C
Total power dissipation at T
= 25°C
P
tot
amb
Continental Device India Limited
Data Sheet
Page 1 of 3
CSA1362
Storage temperature
Junction temperature
T
stg
Tj
–55 to +150 ° C
max.
150 ° C
THERMAL CHARACTERISTICS
T = P (R
+ R ) + T
th s–a amb
j
th j–t
Thermal resistance
from junction to ambient
R
556 °C/mW
th j–a
CHARACTERISTICS (at T = 25°C unless otherwise specified)
A
Collector–emitter breakdown voltage
–I = 10 mA
C
–V
min.
15
V
(BR)CEO
Collector cut–off current
–V
CB
= 15 V
–I
max.
max.
100 nA
100 nA
CBO
Emitter cut-off current
= 5 V
V
EB
I
EBO
Saturation voltages
–I = 400 mA; –I
=
8 mA
–V
–V
max.
0.25
V
C
B
CEsat
Base Emitter on voltage
= 10 mA, V = 1 V
I
C
min.
0.5
0.8
V
V
CE
BE(on)
max.
D.C. current gain
I = 100 mA; –V
= 1 V
h
min.
max.
120
400
C CE
FE
Y
min.
max.
120
240
GR
min.
max.
200
400
I
C
= 800 mA; V
CE
= 1 V
min.
typ.
typ.
40
Transition frequency
= 5V, I = 10 mA
V
CE
f
T
120 MHz
13 pF
C
Collector output capacitance
= 10V, I = 0, f = 1 MHz
V
CB
C
ob
E
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3
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