1N5246B [CDIL]
Silicon Epitaxial Planar Zener Diodes for Voltage Regulation; 硅外延平面稳压二极管的稳压
| 型号： | 1N5246B |
| 厂家： | 
Continental Device India Limited |
| 描述： | Silicon Epitaxial Planar Zener Diodes for Voltage Regulation |
| 文件： | 总5页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5221B - 1N5263B
0.5W Hermetically Sealed Glass Zener Diodes
DO-35
RoHS
Pb
COMPLIANCE
Features
Zener voltage range 2.4 to 56 volts
DO-35 package (JEDEC)
Through-hole device type mounting
Hemetically sealed glass
Compression bonded construction
All extermal surface are corrosion
resistant and leads are readily solderable
RoHS compliant
Solder hot dip Tin(Sn) lead finish
Cathode indicated by polarity band
Dimensions is inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oCambient temperature unless otherwise specified.
Type Number
Power Dissipation
Forward Voltage
Symbol
Pd
VF
TJ, TSTG
Value
500
1.1
Units
mW
V
@ IF=200mA
Operating and Storage Temperature Range
-65 to + 200
OC
Version: A07
RATINGS AND CHARACTERISTIC CURVES (1N5221B THRU 1N5263B)
1.3
1.2
1.1
500
400
300
VZtn = VZt/VZ (25 °C)
TKVZ = 10 x 10-4/K
8 x 10-4/K
6 x 10-4/K
4 x 10-4/K
2 x 10-4/K
0
l
l
1.0
0.9
0.8
200
100
0
- 2 x 10-4/K
- 4 x 10-4/K
TL = constant
240
0
20
- 60
60
120
180
0
5
10
15
95 9599
Tj - Junction Temperature (°C)
I - Lead Length (mm)
95 9611
Figure 1. Thermal Resistance vs. Lead Length
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
600
500
1000
Tj = 25 °C
100
400
300
200
IZ = 5 mA
10
100
0
1
200
0
80
120
160
40
25
0
10
15
20
5
Tamb - Ambient Temperature (°C)
95 9602
95 9598
VZ - Z-Voltage (V)
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
Figure 4. Total Power Dissipation vs. Ambient Temperature
Version: A07
RATINGS AND CHARACTERISTIC CURVES (1N5221B THRU 1N5263B)
100
80
15
10
Ptot = 500 mW
amb = 25 °C
T
60
5
40
20
0
IZ = 5 mA
0
- 5
12
20
0
4
6
8
50
10
20
Z - Z-Voltage (V)
0
30
40
VZ - Z-Voltage (V)
95 9604
V
95 9600
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
50
200
Ptot = 500 mW
Tamb = 25 °C
40
150
VR = 2 V
30
Tj = 25 °C
100
20
10
0
50
0
35
25
15
20
25
30
0
10
15
20
5
95 9607
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
95 9601
Figure 6. Diode Capacitance vs. Z-Voltage
Figure 9. Z-Current vs. Z-Voltage
100
10
1000
IZ = 1 mA
100
10
Tj = 25 °C
1
5 mA
0.1
10 mA
0.01
Tj = 25 °C
15 20
1
0.001
25
1.0
0
5
10
0
0.2
0.4
0.6
0.8
95 9606
95 9605
VF - Forward Voltage (V)
VZ - Z-Voltage (V)
Figure 7. Forward Current vs. Forward Voltage
Figure 10. Differential Z-Resistance vs. Z-Voltage
Version: A07
RATINGS AND CHARACTERISTIC CURVES (1N5221B THRU 1N5263B)
1000
t /T = 0.5
p
100
10
1
t /T = 0.2
p
Single Pulse
R
T = T
= 300 K/W
–T
jmax amb
thJA
t /T = 0.01
p
t /T = 0.1
p
t /T = 0.02
p
t /T = 0.05
p
2
1/2
x
i
= (–V +(V +4r
T/Z
)
)/(2r )
zj
ZM
Z
Z
zj
thp
10-1
100
101
102
95 9603
t – Pulse Length (ms)
p
Figure 11. Thermal Response
Version: A07
ELECTRICAL CHARACTERISTICS
(Ratings at TA=25oC ambient temperature unless otherwise specified).
Z
ZT @ IZT
Ω
ZZK @IZK=0.25mA
Ω
IR @ VR
Device
Vz @ Izt
Voltage
Nominal
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
Current
IZT
VR
uA
(mA)
20
Max.
30
30
30
30
29
28
24
23
22
19
17
11
7
Max.
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
Max.
100
100
75
(Volts)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
20
20
20
75
20
50.0
25.0
15.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
20
20
20
20
20
20
20
20
20
7
20
5
20
6
500
20
8
500
20
8
600
20
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
600
20
600
11
20
600
8.4
9
12
20
600
13
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
600
10
14
600
10
15
600
11
16
600
12
17
600
13
18
600
14
19
600
14
20
600
15
22
600
17
24
600
18
25
600
19
27
600
21
28
600
21
30
600
23
33
700
25
36
700
27
39
800
30
43
900
33
47
1000
1100
1300
36
51
56
39
43
Notes:
1. The type numbers listed have zener voltage as whown and have a standard
tolerance on the nominal zener voltage of ±5%. Device of ±2% is indicated
by a "C" instead of a "B".
2. Nominal zener voltages between the voltages shown and tighter voltage, for
detalied information on price, availability and delivery.
3. The zener voltage(VZ) is tested under pulse condition. The measured VZ is
guaranteed to be within specification with device junction in thermal equilibrium.
4. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac
current having an RMS value equal to 10% of the dc zener current (IZT) is
superimposed to IZT
.
Version: A07
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