JAN1N3030D-1 [CDI-DIODE]
Zener Diode, 27V V(Z), 1%, 1W, Silicon, Unidirectional, DO-41, DO-41, 2 PIN;
| 型号： | JAN1N3030D-1 |
| 厂家： | 
COMPENSATED DEUICES INCORPORATED |
| 描述： | Zener Diode, 27V V(Z), 1%, 1W, Silicon, Unidirectional, DO-41, DO-41, 2 PIN 测试 二极管 |
| 文件： | 总18页 (文件大小：882K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 16 November 2004.
MIL-PRF-19500/115K
16 August 2004
SUPERSEDING
MIL-PRF-19500/115J
10 October 1997
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES
1N3821A THROUGH 1N3828A, 1N3016B THROUGH 1N3051B,
1N3821A-1 THROUGH 1N3828A-1, 1N3016B-1 THROUGH 1N3051B-1,
1N3821AUR-1 THROUGH 1N3828AUR-1, 1N3016BUR-1 THROUGH 1N3051BUR-1,
PLUS C- AND D- TOLERANCE SUFFIX,
JAN, JANTX, JANTXV, AND JANHC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with
voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each
device type as specified in MIL-PRF-19500. One level of product assurance is provided for die.
1.2 Physical dimensions. See figures 1 (DO-13), 2 (DO-41), 3 (DO-213AB), 4, and 5 (for JANHC).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.8) herein and as follows:
-55°C ≤ T
≤ +175°C; -55°C ≤ T
≤ +175°C.
STG
op
Type
P
W
1.0 (1)
1.0 (2)
T
°C
+95
T
°C
T
L
EC
DO-13, DO-41
DO-213AB
+125
(1) L = .375 inch (9.53 mm). Both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate I to
Z
0.0 mA dc at T = +175°C).
L
(2) Derate to 0 at T
= +175°C.
EC
* 1.4 Primary electrical characteristics. Primary electrical characteristic are as shown in primary test ratings (see
3.8) herein and as follows: 3.3 V dc≤ V ≤ 200 V dc. A and B suffix devices are 5 percent voltage tolerance. C suffix
z
devices are 2 percent voltage tolerance. D suffix devices are 1 percent voltage tolerance.
Type
R
R
(1)
(2)
θJEC
θJL
°C/W
°C/W
DO-13
80
DO-41
50
DO-213AB
50
(1) L = .375 inch (9.53 mm).
(2) Junction to end-caps.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/115K
Dimensions
Inches Millimeters
Min
Symbol
Notes
Max
.265
.350
.035
.110
Min
5.46
4.96
0.66
Max
6.73
8.89
0.89
2.79
BD
BL
.215
.195
.026
3
4
LD
LDU
LL
1.000
25.40
LL1
.21
5.33
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. Cathode lead shall be electrically connected to the case. If tubulation is used, it shall
be on the anode end.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions types 1N3821A, C, D through 1N3828A, C, D
and 1N3016B, C, D through 1N3051B, C, D (DO-13).
2
MIL-PRF-19500/115K
Dimensions
Inches Millimeters
Min
Symbol
Notes
Max
.107
.205
.034
Min
2.03
4.06
0.71
25.40
Max
2.72
5.21
0.86
BD
BL
LD
LL
.080
.160
3
3
.028
1.000
LL1
.50
1.27
4
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be
included within this cylinder but shall not be subject to minimum limit of BD.
4. Within this zone lead, diameter may vary to allow for lead finishes and
irregularities other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions types 1N3821A-1, C-1, D-1 through 1N3828A-1, C-1, D-1
and 1N3016B-1, C-1, D-1 through 1N3051B-1, C-1, D-1 (DO-41).
3
MIL-PRF-19500/115K
Dimensions
Inches Millimeters
Symbol
Min
Max
.105
Min
Max
2.67
BD
.094
2.39
.159
4.04
BL1
(Ref.)
(Ref.)
BL
ECT
S
.189
.014
.001
.205
.022
4.80
0.360
0.030
5.21
0.560
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Gap not controlled, shape of body and gap not controlled.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. Physical dimensions of surface mount family types 1N3821AUR-1, CUR-1, and DUR-1
through 1N3828AUR-1, CUR-1, DUR-1 and 1N3016BUR-1, CUR-1 and DUR-1 through
1N3051BUR-1, CUR-1 and DUR-1 (DO-213AB).
4
MIL-PRF-19500/115K
A Version
Dimensions
Symbol
Inches
Millimeters
Min
Max
.039
.033
Min
0.89
0.79
Max
0.99
0.84
A
B
.035
.031
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The physical characteristics of the die thickness are .010 ±002 (0.25 mm).
Metallization is:
Top (anode) - Al, back (cathode) - Au. Al thickness = 25,000Å minimum,
Au thickness = 4,000Å minimum.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 4. Physical dimensions JANHCA die.
5
MIL-PRF-19500/115K
B Version
Dimensions
Symbol
Inches
Millimeters
Min
Max
.039
.031
Min
0.89
0.68
Max
0.99
0.79
A
B
.035
.027
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The physical characteristics of the die thickness are .012 ±002 (0.30 mm).
Metallization is:
Top (anode) - Al, back (cathode) - Au. Al thickness = 40,000Å minimum,
Au thickness = 5,000Å minimum.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 5. Physical dimensions JANHCB die.
6
MIL-PRF-19500/115K
2. APPLICABLE DOCUMENTS
*
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
*
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
*
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
-
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.dap.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA
19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
PRF-19500, and figures 1 (DO-13), 2 (DO-41), 3 (D0-213AB), and figures 4 and 5 for (JANHC).
MIL-
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750 and MIL-PRF-19500 where a
choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Diode construction. All devices shall be in accordance with the requirements of MIL-PRF-19500 and as
follows.
3.4.2.1 Dash one construction. Dash one (-1) diodes shall be of metallurgically bonded double plug construction (I,
II, and III) in accordance with MIL-PRF-19500.
7
MIL-PRF-19500/115K
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5.1 Marking of UR version devices. For UR version devices only, all marking (except polarity) may be omitted
from the body, but shall be retained on the initial container.
3.5.2 Polarity. For dash one or UR dash one, the polarity shall be indicated with a contrasting color band to denote
the cathode end or alternately with a minimum of three contrasting color dots spaced evenly around the periphery at
the cathode end.
3.6 Selection of tight tolerance devices. The C and D suffix devices shall be selected from JAN, JANTX, or
JANTXV devices, which have successfully completed all applicable screening, and groups A, B, and C testing as 5
percent tolerance devices. All sublots of C and D suffix devices shall pass table I, subgroup 2, at tighter tolerances.
Tighter tolerances for mounting clip temperature shall be maintained for reference purpose to establish correlation.
For C and D tolerance levels, T = 30 ±2°C at .375 inches (9.53 mm) from body or equivalent.
L
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3 (see tables I, II, and III).
* 3.9 Maximum and primary test ratings. Maximum and primary test ratings for voltage regulator diodes are
specified in table IV herein.
3.10 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified
herein.
4.2.1 JANHC devices. JANHC devices shall be qualified in accordance with MIL-PRF-19500.
4.2.2 Construction verification. Cross sectional photos from three devices shall be submitted in the qualification
report.
8
MIL-PRF-19500/115K
* 4.3 Screening (JAN, JANTXV and JANTX levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV of
MIL-PRF-19500)
Measurement
JANTX and JANTXV levels
JAN level
3a
Temperature cycling
Temperature cycling (in accordance
with MIL-PRF-19500 JANTX level)
(1) 3c
Thermal impedance (see 4.3.2)
Thermal impedance (see 4.3.2)
9
11
Not applicable
Not applicable
Not applicable
Not applicable
Not applicable
I
R1 and VZ
12
See 4.3.3, t=48 hours
(2) 13
Subgroup 2 of table I herein.
∆IR1 ≤ 100 percent of initial reading or
50nA dc, whichever is greater
∆VZ ≤ ± 2 percent of initial reading.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed
in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (Applicable to –1 and UR-1
devices only).
(2) PDA = 5 percent for screen 13, applies to ∆I , ∆V . Thermal impedance (Z
) is not required in
θJX
R1
Z
screen 13.
4.3.1 Screening (JANHC). Screening of JANHC die shall be in accordance with MIL-PRF-19500.
* 4.3.2 Thermal impedance Z
measurements for screening. The Z
measurements shall be performed in
θJX
θJX
accordance with method 3101 of MIL-STD-750. The maximum limit (not to exceed the table I, subgroup 2 limit) for
Z
in screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical methods.
θJX
* 4.3.2.1 For initial qualification or requalification. Read and record data (Z
) shall be supplied to the qualifying
θJX
activity on one lot (random sample of 500 devices minimum). Twenty-two serialized devices shall be sent to the
qualifying activity for test correlation.
* 4.3.3 Power burn-in conditions. Power burn-in conditions are as follows: IZ = column 10 of table IV minimum; TA
shall be room ambient in accordance with MIL-STD-750, section 4.5. Mounting and test conditions in accordance
with method 1038 of MIL-STD-750, condition B. Adjust IZ or TA to achieve the required TJ. Use method 3100 of MIL-
STD 750 to measure TJ. TJ = 125°C minimum for 96 hours.
9
MIL-PRF-19500/115K
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein. The following test conditions shall be used for ZθJX group A inspection:
a.
b.
c.
d.
I
measurement current .......................................... 1 mA - 10 mA.
forward heating current ........................................ 1.0 A - 2.0 A.
heating time.......................................................... 10 ms.
M
H
H
I
t
t
measurement delay time................................... 70 µs maximum.
MD
* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical
measurements (end-points) shall be in accordance with the applicable footnotes and steps of table III herein.
Subgroup
Method
1051
Condition
B2
B2
B3
-55°C to +175°C, 25 cycles.
See 4.5.1.
4066
1027
I
Z
= I
column 8 of table IV; T = +30°C ± 5°C.
A
ZM
B4
Not applicable.
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in
accordance with the applicable footnotes and steps of table III herein.
Subgroup
C2
Method
2036
Condition
Terminal strength: Test condition A; weight = 4 lbs; t = 15 seconds.
Terminal strength: Test condition E. (Terminal strength not required for UR-1
devices.)
C3
C5
Applies to D0-13 devices only.
See 4.5.5.
3101
or
4081
C6
C7
C7
1026
1018
4071
I = I column 8 of table IV; T = +30°C ±5°C.
Z Z A
Applies to DO-13 devices only.
I
= I column 5 of table IV; T = +25°C ±5°C; T = +125°C ± 5°C;
Z
Z
Z
A
2
αV = column 15 of table IV; 22 devices, c = 0.
10
MIL-PRF-19500/115K
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Surge current (IZSM). The peak currents shown in column 10 of table IV shall be applied in the reverse
direction and these shall be superimposed on the current (IZ = IZ1) (column 5 of table IV) a total of 5 surges at 1
minute intervals. Each individual surge shall be one-half square-wave-pulse of 1/120 second duration or an
equivalent one-half sine wave with the same effective rms current.
4.5.2 Regulator voltage measurements. The test current shall be applied until thermal equilibrium is attained (90
seconds maximum) prior to reading the breakdown voltage. For this test, the surface mount device shall be mounted
at the endcaps and the axial leaded device shall be suspended by its leads with mounting clips whose inside edge is
located at .375 inch (9.53 mm) from the body and the mounting clips shall be maintained at a temperature of +25°C
+8°C,-2°C . This measurement may be performed after a shorter time following application of the test current than
that which provides thermal equilibrium if correlation to stabilized readings can be established to the satisfaction of
the Government.
4.5.3 Temperature coefficient of regulator voltage (α ). The device shall be temperature stabilized with current
V
z
applied prior to reading regulator voltage at the specified ambient temperature as specified in 4.4.3, subgroup C7.
4.5.4 Voltage regulation V (reg). Voltage regulation shall be determined by the difference of the regulator voltage
z
measured at different currents as specified in table I, subgroup 7. Both tests shall be performed at thermal
equilibrium. This ∆V shall not exceed column 9 of table IV.
z
4.5.5 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101 or 4081 of
MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test. The maximum limit for
R
θJEC
under these test conditions shall be R
θJL
(max) = 80°C/W (D0-13), R
θJL
(max) = 50°C/W (D0-41), or
= 50°C/W. The following conditions shall apply when using method 3101:
R
θJL
a. I
M---------------------------------------------1 mA to 10 mA.
b. I --------------------------------------------- 0.5 A to 1.0 A.
H
c. t --------------------------------------------- 25 seconds minimum.
H
d. t
MD
------------------------------------------70 µs maximum.
LS = Lead spacing = .375 inch (9.53 mm) as defined on figure 6 below:
LS = 0 inches for "UR" suffix devices.
FIGURE 6. Mounting conditions.
4.5.6.1 For initial qualifications and requalifications. Read and record data in accordance with table II herein and
shall be included in the qualification report.
11
MIL-PRF-19500/115K
TABLE I. Group A inspection.
MIL-STD-750
Inspection 1/
Subgroup 1
Symbol
Limits 2/
Unit
Method
2071
Conditions
Min
Max
Visual and mechanical
examination
Subgroup 2
Forward voltage
Reverse current
4011
4016
1.2
V dc
IF =200 mA dc
VF
Col.
12
µA dc
DC method; VR = column 11
of table IV.
IR1
Regulator voltage (see
4.5.2)
4022
3101
Col. 3 Col. 4
V dc
VZ
IZ1 = IZ = (column 5 of table
IV).
Thermal impedance
See 4.3.2 and 4.4.1
(-1 device only).
15
°C/W
Z
θJX
Subgroup 3
High-temperature operation
TA = +150°C
Reverse current (-1 device
only)
4016
Col.
14
µA dc
DC method: VR = column 11
of table IV.
IR2
Subgroup 4
Small-signal reverse
4051
4051
Col. 6
Col. 7
ohms
ohms
IZ = (column 5 of table IV).
Isig =10 percent of IZ.
ZZ
breakdown impedance
Small-signal knee
impedance
IZK = (column 16 of table IV).
ZZK
I
sig =10 percent of IZK.
Subgroups 5 and 6
Not applicable
Subgroup 7
Voltage regulation (see
4.5.4)
Col. 9
V dc
IZ = 10 percent of column 8
of table IV (current 1).
VZ(reg)
IZ = 50 percent of column 8
of table IV (current 2).
1/ For sampling plan, see MIL-PRF-19500.
2/ Column references are to table IV herein.
12
MIL-PRF-19500/115K
* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection 1/
MIL-STD-750
Qualification conformance
inspection
Method
Conditions
Subgroup 1
45 devices, c = 0
Temperature cycling
1051
1056
500 cycles.
500 cycles.
Thermal shock
Electrical measurements
Subgroup 2
See table III, steps 1, 2, 3 and 5.
45 devices, c = 0
3 devices, c = 0
Intermittent life
1037
2101
6,000 cycles.
Electrical measurements
See table III, steps 1, 2, 3 and 5.
Subgroup 3
Decap analysis
Cross section or scribe and break.
Separate samples shall be used for each
test.
Subgroup 4
Thermal impedance curves
(-1 devices only)
Each supplier shall submit their (typical)
maximum design thermal impedance curves.
In addition, the optimal test conditions and
Z
θJX limit shall be provided to the qualifying
activity in the qualification report.
Subgroup 5 and 6
Not applicable
Subgroup 8
Resistance to glass
1057
Condition B. Cool down after solder
immersion is permitted. Test until failure
occurs on all devices with the chosen
sample or to a maximum of 25 cycles,
whichever comes first.
45 devices, c = 0
cracking (-1 devices only)
1/ A separate sample may be pulled for each test.
13
MIL-PRF-19500/115K
TABLE III. Group A, B, C, and E electrical end-point measurements. 1/ 2/ 3/
Step
Inspection
MIL-STD-750
Symbol
Limits 1/
Unit
Method
4016
Conditions
Min
Max
1.
2.
3.
Reverse
current
Col. 12
Col. 13
Col. 4
µA dc
µA dc
V dc
DC method; VR = column 11 of table
IV.
IR1
IR3
VZ
Reverse
current
4016
4022
DC method; VR = column 11 of table
IV.
Breakdown
voltage (see
4.5.2)
Col. 3
IZ = (column 5 of table IV).
4.
5.
Small-signal
breakdown
impedance
4051
3101
Col. 6
15
Ohms
IZ = (column 5 of table IV).
ZZ
I
sig =10 percent of IZ.
Thermal
See 4.3.2 and 4.4.1 (-1 devices only)
°C/W
Z
θJX
impedance
1/ Column references are to table IV herein.
2/ The electrical measurements for table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table III herein, steps 1, 3, 4, and 5.
b. Subgroups 3 and 6, see table III herein, steps 2, 3, and 4.
3/ The electrical measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table III herein, steps 1, 3, 4, and 5.
b. Subgroup 3, (DO-13 devices only), see table III herein, steps 1, 3, and 4.
c. Subgroup 6, see table III herein, steps 2, 3, and 4
14
TABLE IV. Test ratings for diodes types 1N3821A through 1N3828A and 1N3016B through 1N3051B (5 percent tolerance).
Col 1
Col 2 Col 3 Col 4 Col 5
Col 6
Col 7
Col 8 Col 9
IZM Vz
Col 10
Col 11
Col 12
Col 13
Col 14
Col 15
Col 16
Voltage
Group
VZ
VZ
VZ
IZ
ZZ
ZZK Knee
IR (Surge)
VR
IR1 Reverse IR3 Reverse
(-1 only)
Izk
α
VZ
Nom
Min
Max
Test Impedance impedance Max dc (reg)
Reverse
voltage
current dc
current dc IR2 Reverse
current dc;
Test
TA = +25°C
Temperatur
e coefficient
current
current
current
1/
2/
2/
2/
2/
TA = +150°C
Volts Volts Volts
mA
ohms
ohms
mA
Volts
mA
Volts
non -1
-1 non-1
-1
mA
µA
%/°C
µA
µA
µA
µA
1N3822A
1N3823A
3.6
3.9
3.42 3.78
3.71 4.09
69
64
10
9
400
400
252
238
0.80
0.75
1260
1190
1
1
150
100
- .070
- .060
1.0
1.0
100
75
200 100
50
25
100
40
± .025
± .030
+ .040
+ .050
1N3825A
4.7
4.47 4.93
53
8
500
194
0.60
970
1
10
5
20
10
50
1.0
1N3826A
1N3827A
1N3828A
5.1
5.6
6.2
4.85 5.35
5.32 5.88
5.89 6.51
49
45
41
7
5
2
550
600
700
178
162
146
0.50
0.40
0.30
890
810
730
1
2
3
10
10
10
3
3
3
20
20
20
6
6
6
50
50
50
1.0
1.0
1.0
1N3016B
1N3017B
1N3018B
1N3019B
1N3020B
1N3021B
1N3022B
1N3023B
1N3024B
1N3025B
1N3026B
1N3027B
1N3028B
1N3029B
1N3030B
1N3031B
1N3032B
1N3033B
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
6.46 7.14
7.13 7.87
7.79 8.61
8.65 9.55
37
34
31
28
25
23
21
19
17
3.5
4.0
4.5
6.0
7
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
140
125
115
105
95
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.75
0.80
0.83
0.95
1.0
740
680
600
540
480
420
400
370
320
300
260
240
210
200
170
160
150
130
5.2
5.7
150
100
50
25
25
10
10
10
10
10
10
10
10
10
10
10
10
10
5.0
5.0
5.0
5.0
5.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
300
200
100
50
50
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
4
50
50
50
50
50
10
10
10
10
10
10
10
10
10
10
10
10
10
+ .057
+ .061
+ .065
+ .068
+ .071
+ .073
+ .076
+ .079
+ .082
+ .083
+ .085
+ .086
+ .087
+ .088
+ .090
+ .092
+ .091
+ .093
1.0
0.5
6.2
0.5
0.5
6.9
9.5
10.5
7.6
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
10.45 11.55
11.40 12.60
12.35 13.65
14.25 15.75
15.20 16.80 15.5
17.10 18.90 14.0
19.0 21.0
20.9 23.1
22.8 25.2
25.7 28.3
28.5 31.5
31.4 34.6
34.2 37.8
8
85
8.4
9
80
9.1
4
10
14
16
20
22
23
25
35
40
45
50
74
9.9
2
63
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
2
60
2
52
2
12.5
11.5
10.5
9.5
47
2
43
2
40
1.1
2
34
1.3
2
8.5
31
1.4
2
7.5
28
1.5
2
7.0
26
1.7
2
See footnotes at end of table.
TABLE IV. Test ratings for diodes types 1N3821A through 1N3828A and 1N3016B through 1N3051B (5 percent tolerance).
Col 1
Col 2 Col 3 Col 4 Col 5
Col 6
Col 7
Col 8 Col 9
IZM Vz
Col 10
Col 11
Col 12
Col 13
Col 14
Col 15
Col 16
Voltage
Group
VZ
VZ
VZ
IZ
ZZ
ZZK Knee
IR (Surge)
VR
IR1 Reverse IR3 Reverse
current dc current dc
(-1 only)
Izk
Test
α
VZ
Nom
Min
Max
Test Impedance impedance Max dc (reg)
Reverse
voltage
IR2 Reverse
current dc;
TA = +150°C
TA = +25°C
Temperature
coefficient
current
current
current
1/
2/
2/
2/
2/
Volts Volts Volts
mA
ohms
ohms
mA
Volts
mA
Volts non -1
-1
non-1
-1
mA
µA
%/°C
µA
µA
µA
µA
1N3035B
43
40.9 45.1
6.0
70
80
95
110
125
150
1500
21
1.9
100
32.7
10
+ .095
0.25
10
0.5
20
2
1N3036B
1N3037B
1N3038B
1N3039B
1N3040B
47
51
56
62
68
44.7 49.3
48.5 53.5
53.2 58.8
58.95 65.1
64.60 71.4
5.5
5.0
4.5
4.0
3.7
1500
1500
2000
2000
2000
19
18
17
15
14
2.1
2.3
2.5
2.7
3.0
95
90
85
75
70
35.8
38.8
32.6
47.1
51.7
10
10
10
10
10
0.5
0.5
0.5
0.5
0.5
20
20
20
20
20
2
2
2
2
2
10
10
10
10
10
+ .095
+ .096
+ .096
+0.097
+0.097
0.25
0.25
0.25
0.25
0.25
1N3041B
1N3042B
75
82
71.35 78.7
77.95 86.1
3.3
3.0
175
200
2000
3000
12
11
3.3
3.6
63
58
56.0
62.2
10
10
0.5
0.5
20
20
2
2
10
10
+0.098
+0.098
0.25
0.25
2.0
550
4500
8.0
5.5
40
91.2
10
0.5
20
2
10
+0.100
0.25
1N3046B 120
114
126
1N3047B 130 123.5 136.5
1N3048B 150 142.5 157.5
1.9
1.7
1.6
1.4
1.2
700
5000
6000
6500
7000
8000
6.9
5.7
5.4
4.9
4.6
6.0
7.0
35
29
27
25
23
98.8
114.0
121.6
136.8
152.0
10
10
10
10
10
0.5
0.5
0.5
0.5
0.5
20
20
20
20
20
2
2
2
2
2
10
10
10
10
10
+0.100
+0.100
+0.100
+0.100
+0.100
0.25
0.25
0.25
0.25
0.25
1000
1100
1200
1500
1N3049B 160
1N3050B 180
1N3051B 200
152
171
190
168
189
210
8.0
10.0
12.0
1/ Ratings also apply to dash one and surface mount devices unless otherwise noted.
2/ For 5 percent voltage tolerances are shown in table.
For 2 percent tolerance (“C” suffix “-1” suffix and JANHC only), column 3 is 2 percent less than column 2, column 4 is 2 percent more than column 2.
For 1 percent tolerance (“D” suffix “-1” suffix and JANHC only), column 3 is 1 percent less than column 2, column 4 is 1 percent more than column 2.
MIL-PRF-19500/115K
*
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel,
these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
*
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML No. 19500) whether
or not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000 or e-mail
vqe.chief@dla.mil.
* 6.4 Substitution information. Device types 1N3821A through 1N3828A and 1N3016B through 1N3051B
(excluding JANHC devices) are inactive for new design as of the date of this specification.
6.4.1 Substitutability of 2 percent and 1 percent tolerance devices. Devices of tighter tolerance are a direct
one way substitute for the looser tolerance devices (example: JANTX1N3821D-1 substitutes for
JANTX1N3821A-1).
17
MIL-PRF-19500/115K
* 6.5 Suppliers of JANHC die. The qualified JANHC suppliers with the applicable letter version (example
JANHCA1N3821A) will be identified on the QML.
JANHC ordering information
PIN
Manufacturer CAGE
43611
12954
1N3821A
through
JANHCA1N3821A
through
JANHCB1N3821A
through
1N3828A
JANHCA1N3828A
JANHCB1N3828A
1N3016B
through
JANHCA1N3016B
through
JANHCB1N3016B
through
1N3051B
JANHCA1N3051B
JANHCB1N3051B
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes no
liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Preparing activity:
DLA - CC
Air Force - 11
NASA - NA
DLA – CC
(Project 5961-2730)
Review activities:
Army - AR, AV, MI, SM
Navy - AS, MC
Air Force -19, 99
* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at http://www.dodssp.daps.mil.
18
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