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CGH702T250W4L [CDE]

Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors; 逆变器级螺丝端子铝电解85 ⅹC ，螺丝端子电容器

CGH702T250W4L


元器件型号：	CGH702T250W4L
生产厂家：	CORNELL DUBILIER ELECTRONICS
描述和应用：	Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors 逆变器级螺丝端子铝电解85 ⅹC ，螺丝端子电容器电容器
PDF文件：	总2页 (文件大小：234K)
下载文档：	下载PDF数据表文档文件
型号参数：CGH702T250W4L参数

CGH711T500V3-C

Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors

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9 CDE

CGH732T350X5L

Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors

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6 CDE

CGH742T250X3L

Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors

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3 CDE

CGH772T450X8L

Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors

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11 CDE

CGH782T350X5L

Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors

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6 CDE

CGH80030D

30 W, 8.0 GHz, GaN HEMT Die

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3 CREE

CGH901T500V3L

Inverter Grade Screw Terminal Aluminum Electrolytic 85 ˚C, Screw Terminal Capacitors

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12 CDE

CGH902T250W5L

Inverter Grade Screw Terminal Aluminum Electrolytic 85 ⅹC, Screw Terminal Capacitors

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10 CDE

CGHJ5L2X7R1A106KTXXXX

CGJ Series Extended Life Capacitors

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7 TDK

CGHV141K0F

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET,

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1 CREE

CGHV14250

250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

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1 CREE

CGHV14250F

250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

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1 CREE

CGHV14250F-AMP

250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

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0 CREE

CGHV14250P

RF Power Field-Effect Transistor,

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1 CREE

CGHV14250P-AMP

250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

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1 CREE

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