CAT660ESA-TE13 [CATALYST]
100mA CMOS Charge Pump Inverter/Doubler; 百毫安CMOS电荷泵逆变器/倍增
| 型号： | CAT660ESA-TE13 |
| 厂家： | 
CATALYST SEMICONDUCTOR |
| 描述： | 100mA CMOS Charge Pump Inverter/Doubler |
| 文件： | 总16页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Information
E
CAT660
100mA CMOS Charge Pump Inverter/Doubler
TM
FEATURES
I Replaces MAX660 and LTC®660
I Converts V+ to V- or V+ to 2V+
I Low output resistance, 4Ω typical
I High power efficiency
I Low quiescent current
I Pin-compatible, high-current alternative to
7660/1044
I Industrial temperature range
I Available in 8-pin SOIC, DIP and 0.8mm thin 8-
pad TDFN packages
I Selectable charge pump frequency
- 10kHz or 80kHz
- Lead-free, halogen-free package option
- Optimize capacitor size
APPLICATIONS
I Negative voltage generator
I Voltage doubler
I Low EMI power source
I Instrumentation
I GaAs FET biasing
I LCD contrast bias
I Cellular phones, pagers
I Voltage splitter
I Lithium battery power supply
DESCRIPTION
The CAT660 is a charge-pump voltage converter. It will
inverta1.5Vto5.5Vinputtoa-1.5Vto-5.5Voutput.Only
two external capacitors are needed. With a guaranteed
100mAoutputcurrentcapability,theCAT660canreplace
a switching regulator and its inductor. Lower EMI is
achieved due to the absence of an inductor.
V+. The operating frequency can also be adjusted with
an external capacitor at the OSC pin or by driving OSC
with an external clock.
Both 8-pin DIP and SOIC packages are available in the
industrial temperature range. The TDFN package has a
4x4mmfootprintandfeaturesa0.8mmmaximumheight.
Comparedtothe8-pinSOICtheTDFNpackagefootprint
is nearly 50% less. For die availability, contact Catalyst
Semiconductor marketing.
In addition, the CAT660 can double a voltage supplied
from a battery or power supply. Inputs from 2.5V to 5.5V
will yield a doubled, 5V to 11V output voltage.
A Frequency Control pin (BOOST/FC) is provided to
select either a high (80kHz) or low (10kHz) internal
oscillator frequency, thus allowing quiescent current vs.
capacitor size trade-offs to be made. The 80kHz
frequency is selected when the FC pin is connected to
The CAT660 replaces the MAX660 and the LTC660.
In addition, the CAT660 is pin compatible with the 7660/
1044, offering an easy upgrade for applications with
100mA loads.
TYPICAL APPLICATION
+V
IN
1.5V to 5.5V
Doubled
Positive
1
2
3
4
BOOST/FC
CAP+
V+
OSC
LV
8
7
6
5
1
2
3
4
BOOST/FC
CAP+
V+
OSC
LV
8
7
6
5
Output
Voltage
C1
+
CAT660
CAT660
C1
Inverted
Negative
Output
+
GND
CAP-
GND
CAP-
V
= 2.5V to 5.5V
IN
OUT
OUT
Voltage
POSITIVE
VOLTAGE DOUBLER
VOLTAGE INVERTER
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 5000, Rev. U
1
CAT660
PIN CONFIGURATION
SOIC Package (S, X)
DIP Package (P)
BOOST/FC 1
8 V+
TDFN Package (RD8, ZD8)
BOOST/FC 1
CAP+ 2
8 V+
1
2
3
4
BOOST/FC
CAP+
V+
8
7
6
5
CAT
660
CAT
660
OSC
LV
CAP+ 2
GND 3
CAP- 4
7 OSC
6 LV
7 OSC
6 LV
CAT
660
GND
GND 3
CAP-
OUT
5 OUT
CAP- 4
5 OUT
(Top View)
TDFN Package: 4mm x 4mm
0.8mm maximum height
(Top View)
(Top View)
PIN DESCRIPTIONS
Circuit Configuration
Pin Number
Name
Inverter Mode
Doubler Mode
1
Boost/FC
Frequency Control for the internal oscilla-
tor. With an external oscillator BOOST/FC
has no effect.
Same as inverter.
Boost/FC
Open
Oscillator Frequency
10kHz typical, 5kHz minimum
80kHz typical, 40kHz minimum
V+
Same as inverter.
2
3
4
5
6
CAP+
GND
CAP-
OUT
LV
Charge pump capacitor. Positive terminal.
Power supply ground.
Power supply. Positive voltage input.
Same as inverter.
Charge pump capacitor. Negative terminal.
Output for negative voltage.
Power supply ground.
LV must be tied to OUT for all input
voltages.
Low-Voltage selection pin. When the input
voltage is less than 3V, connect LV to GND.
For input voltages above 3V, LV may be
connected to GND or left open. If OSC is
driven externally, connect LV to GND.
Oscillatorcontrolinput.Anexternalcapacitor
can be connected to lower the oscillator
frequency. An external oscillator can drive
OSC and set the chip operating frequency.
The charge-pump frequency is one-half the
frequency at OSC.
Same as inverter. Do not overdrive
OSCindoublingmode. Standardlogic
levels will not be suitable. See the
applications section for additional
information.
7
OSC
V+
8
Power supply. Positive voltage input.
Positive voltage output.
ORDERING INFORMATION
Part Number
CAT660EPA
Package
8 lead Plastic DIP
Temperature Range
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
CAT660ESA
8-lead SOIC
CAT660ESA-TE13
CAT660ERD8
CAT660EVA
8-lead SOIC, Tape & Reel
8-pad TDFN
8-lead SOIC (Lead-free, Halogen-free)
8-lead SOIC (Lead-free, Halogen-free)
8-pad TDFN (Lead-free, Halogen-free)
CAT660EVA-TE13
CAT660EZD8
Doc. No. 5000, Rev. U
2
CAT660
ABSOLUTE MAXIMUM RATINGS
V+ to GND .............................................................6V
Storage Temperature.........................-65°C to 160°C
Lead Soldering Temperature (10 sec)............. 300°C
Note: TA = Ambient Temperature
Input Voltage (Pins 1, 6 and 7) .. -0.3V to (V+ + 0.3V)
BOOST/FC and OSC Input Voltage ........... The least
negative of (Out - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
These are stress ratings only and functional operation is not
implied. Exposure to absolute maximum ratings for prolongued
time periods may affect device reliability. All voltages are with
respect to ground.
Output Short-circuit Duration to GND .............. 1 sec.
(OUT may be shorted to GND for 1 sec without damage but
shorting OUT to V+ should be avoided.)
Operating Ambient Temperature Range
Continuous Power Dissipation (TA = 70°C)
CAT660E.............. -40°C to 85°C
Plastic DIP................................................730mW
SOIC.........................................................500mW
TDFN ............................................................... 1W
ELECTRICAL CHARACTERISTICS
V+ = 5V, C1 = C2 = 150µF, Boost/FC = Open, COSC = 0pF, inverter mode with test circuit as shown in Figure 1 unless
otherwise noted. Temperature is over operating ambient temperature range unless otherwise noted.
Parameter
Symbol
VS
Conditions
Min
3.0
1.5
2.5
Typ
Max Units
Inverter: LV = Open. RL = 1kΩ
Inverter: LV = GND. RL = 1kΩ
Doubler: LV = OUT. RL = 1kΩ
BOOST/FC = open, LV = Open
BOOST/FC = V+ , LV = Open
OUT is more negative than -4V
IL = 100mA, C1 = C2 = 150 µF (Note 2)
BOOST/FC = V+ (C1, C2 ESR ≤ 0.5Ω)
IL = 100mA, C1 = C2 = 10 µF
BOOST/FC = Open
5.5
5.5
5.5
0.5
3
V
Supply Voltage
Supply Current
IS
0.09
0.3
mA
Output Current
IOUT
RO
100
mA
Ω
Output Resistance
4
7
12
Oscillator Frequency FOSC
(Note 3)
5
10
80
kHz
µA
%
BOOST/FC = V+
40
OSC Input Current
IOSC
BOOST/FC = Open
BOOST/FC = V+
1
5
Power Efficiency
PE
RL = 1kΩ connected between V+ and
OUT, TA = 25°C (Doubler)
RL = 500Ω connected between GND and
OUT, TA = 25°C (Inverter)
96
92
98
96
IL = 100mA to GND, TA = 25°C (Inverter)
No load, TA = 25°C
88
Voltage Conversion VEFF
Efficiency
99
99.9
%
Note 1. In Figure 1, test circuit capacitors C1 and C2 are 150µF and have 0.2Ω maximum ESR. Higher ESR levels may reduce efficiency and output
voltage.
Note2. TheoutputresistanceisacombinationoftheinternalswitchresistanceandtheexternalcapacitorESR. Formaximumvoltageandefficiency
keep external capacitor ESR under 0.2Ω.
Note 3. FOSC is tested with COSC = 100pF to minimize test fixture loading. The test is correlated back to COSC=0pF to simulate the capacitance
at OSC when the device is inserted into a test socket without an external COSC
.
Doc. No. 5000, Rev. U
3
CAT660
Figure 1. Test Circuit
I
S
1
2
3
4
8
7
6
5
+
5V
V
+
V
BOOST/FC
V+
External
Oscillator
CAPC+ AT660
OSC
+
C
1
C
GND
LV
OUT
OSC
150µF
R
CAP-
L
I
L
V
OUT
Voltage Inverter
C2
150µF
+
TYPICAL OPERATING CHARACTERISTICS
Typical characteristic curves are generated using the test circuit in Figure 1. Inverter test conditions are: V+=5V, LV
= GND, BOOST/FC = Open and TA = 25˚C unless otherwise indicated. Note that the charge-pump frequency is one-
half the oscillator frequency.
Supply Current vs. Input Voltage
Supply Current vs. Temperature (no load)
120
150
120
90
60
30
0
VIN = 5V
100
80
60
40
20
0
No Load
VIN = 3V
VIN = 2V
1
2
3
4
INPUT VOLTAGE [V]
5
6
-50 -25
0
25 50 75 100 125
Output Resistance vs. Input Voltage
Output Resistance vs. Temperature (50
Ω
load)
10
8
7
6
8
6
VIN = 2V
100 Load
5
VIN = 3V
4
2
0
4
VIN = 5V
3
2
-50 -25
0
25
50
75 100 125
1
2
3
4
INPUT VOLTAGE [V]
5
6
Doc. No. 5000, Rev. U
4
CAT660
TYPICAL OPERATING CHARACTERISTICS
Inverted Output Voltage vs. Load, V+ = 5V
Output Voltage Drop vs. Load Current
1.0
0.8
0.6
0.4
0.2
0.0
5.0
4.8
4.6
4.4
4.2
4.0
V+ = 3V
V+ = 5V
0
20
40
60
80
100
0
20
40
60
80
100
LOAD CURRENT [mA]
LOAD CURRENT [mA]
Oscillator Frequency vs. Supply Voltage
Oscillator Frequency vs. Supply Voltage
20
18
200
LV = OPEN
16
150
14
12
LV = GND
LV = GND
10
8
100
LV = OPEN
6
50
4
BOOST = OPEN
2
BOOST = +V
0
0
2
3
4
5
SUPPLY VOLTAGE [V]
6
2
3
4
5
SUPPLY VOLTAGE [V]
6
Supply Current vs. Oscillator Frequency
10000
No Load
1000
V+ = 5V
100
10
1
10
100
1000
OSCILLATOR FREQUENCY [kHz]
Doc. No. 5000, Rev. U
5
CAT660
The 1/FC1 term can be modeled as an equivalent
impedance REQ. A simple equivalent circuit is shown in
figure 3. This circuit does not include the switch
resistance nor does it include output voltage ripple. It
does allow one to understand the switch-capacitor
topology and make prudent engineering tradeoffs.
APPLICATION INFORMATION
Circuit Description and Operating Theory
The CAT660 switches capacitors to invert or double an
input voltage.
Figure 2 shows a simple switch capacitor circuit. In
position 1 capacitor C1 is charged to voltage V1. The
total charge on C1 is Q1 = C1V1. When the switch
movestoposition2, theinputcapacitorC1isdischarged
to voltage V2. After discharge, the charge on C1 is Q2 =
C1V2.
For example, power conversion efficiency is set by the
output impedance, which consists of REQ and switch
resistance. As switching frequency is decreased, REQ,
the 1/FC1 term, will dominate the output impedance,
causinghighervoltagelossesanddecreasedefficiency.
As the frequency is increased quiescent current
increases. At high frequency this current becomes
significant and the power efficiency degrades.
The charge transferred is:
∆Q = Q1 - Q2 = C1 × (V1 - V2)
The oscillator is designed to operate where voltage
losses are a minimum. With external 150µF capacitors,
theinternalswitchresistancesandtheEquivalentSeries
Resistance (ESR) of the external capacitors determine
the effective output impedance.
If the switch is cycled "F" times per second, the current
(charge transfer per unit time) is:
I = F × ∆Q = F × C1 (V1 - V2)
Rearranging in terms of impedance:
A block diagram of the CAT660 is shown in figure 4. The
CAT660 is a replacement for the MAX660 and the
LTC660.
(V1-V2)
(1/FC1)
V1-V2
REQ
I=
=
Figure 2. Switched-Capacitor Building Block
Figure 3. Switched-Capacitor Equivalent Circuit
REQ
V1
V2
V1
V2
C1
C2
R
L
C2
R
L
1
FC1
REQ =
Doc. No. 5000, Rev. U
6
CAT660
OSCILLATOR FREQUENCY CONTROL
Theswitchingfrequencycanberaised,loweredordrivenfromanexternalsource.Figure5showsafunctionaldiagram
of the oscillator circuit.
The CAT660 oscillator has four control modes:
BOOST/FC Pin Connection
Open
OSC Pin Connection
Open
Nominal Oscillator Frequency
10kHz
BOOST/FC= V+
Open or BOOST/FC= V+
Open
Open
80kHz
External Capacitor
External Clock
—
Frequency of external clock
If BOOST/FC and OSC are left floating (Open), the
nominal oscillator frequency is 10kHz. The pump
frequency is one-half the oscillator frequency.
an external capacitor at OSC, the operating frequency
can be set.
Note that the frequency appearing at CAP+ or CAP- is
one-half that of the oscillator.
By connecting the BOOST/FC pin to V+, the charge and
discharge currents are increased, and the frequency is
increased by approximately 8 times. Increasing the
frequencywilldecreasetheoutputimpedanceandripple
currents.Thiscanbeanadvantageathighloadcurrents.
Increasing the frequency raises quiescent current but
allows smaller capacitance values for C1 and C2.
Driving the CAT660 from an external frequency source
can be easily achieved by driving Pin 7 and leaving the
BOOST pin open, as shown in Figure 6. The output
current from Pin 7 is small, typically 1µA to 8µA, so a
CMOScandrivetheOSCpin.For5Vapplications,aTTL
logic gate can be used if an external 100kΩ pull-up
If pin 7, OSC, is loaded with an external capacitor the
frequency is lowered. By using the BOOST/FC pin and
resistor is used as shown in figure 6.
Figure 4. CAT660 Block Diagram
+
(8)
V
SW1
SW2
+
CAP
(2)
BOOST/FC
Ο
Ο
8x
(1)
+
C1
2
OSC
-
OSC
(7)
CAP
(4)
VOUT
(5)
C2
+
LV
(6)
GND
(3)
CLOSED WHEN
+
V
> 3.0V
(N) = Pin Number
Doc. No. 5000, Rev. U
7
CAT660
CAPACITOR SELECTION
Output voltage ripple is determined by the value of C2
and the load current. C2 is charged and discharged at a
current roughly equal to the load current. The internal
switching frequency is one-half the oscillator frequency.
Low ESR capacitors are necessary to minimize voltage
losses, especially at high load currents. The exact
values of C1 and C2 are not critical but low ESR
capacitors are necessary.
VRIPPLE = IOUT/(FOSC x C2) + IOUT x ESRC2
The ESR of capacitor C1, the pump capacitor, can have
a pronounced effect on the output. C1 currents are
approximately twice the output current and losses occur
on both the charge and discharge cycle. The ESR
effectsarethusmultipliedbyfour. A0.5Ω ESRforC1will
havethesameeffectasa2Ω increaseinCAT660output
impedance.
For example, with a 10kHz oscillator frequency (5kHz
switchingfrequency),a150µFC2capacitorwithanESR
of0.2Ω anda100mAloadpeak-to-peakripplevoltageis
87mV.
VRIPPLE vs. FOSC
VRIPPLE (mV) IOUT (mA)
FOSC (kHz)
C2 (µF)
150
C2 ESR (Ω)
87
28
100
100
10
80
0.2
0.2
150
Figure 5. Oscillator
Figure 6. External Clocking
+
V
+
V
7.0 I
I
REQUIRED FOR TTL LOGIC
BOOST/FC
(1)
1
2
3
4
8
7
6
5
100k
BOOST/FC
V+
NC
OSC INPUT
CAP+CAT660 OSC
GND
+
LV
C1
OSC
(7)
+
CAP-
OUT
-V
C2
~18pF
+
7.0 I
I
LV
(6)
Doc. No. 5000, Rev. U
8
CAT660
CAPACITOR SUPPLIERS
The following manufacturers supply low-ESR capacitors:
Manufacturer Capacitor Type Phone
AVX/Kyocera TPS/TPS3
Vishay/Sprague 595
WEB
Email
Comments
Tantalum
843-448-9411 www.avxcorp.com
402-563-6866 www.vishay.com
619-661-6835 www.sanyo.com
847-843-7500 www.nichicon-us.com
avx@avxcorp.com
—
Aluminum
Sanyo
MV-AX, UGX
Svcsales@sanyo.com Aluminum
Nichicon
F55
—
Tantalum
Aluminum
HC/HD
Capacitor manufacturers continually introduce new series and offer different package styles. It is recommended
that before a design is finalized capacitor manufacturers should be surveyed for their latest product offerings.
CONTROLLING LOSS IN CAT660 APPLICATIONS
There are three primary sources of voltage loss:
The effective output impedance of a CAT660 circuit is
approximately:
1. Output resistance
VLOSSΩ = ILOAD x ROUT, where ROUT is
the CAT660 output resistance and ILOAD is
the load current.
Rcircuit ≈ Rout 660 + (4 x ESRC1) + ESRC2
2. Charge pump (C1) capacitor ESR:
≈
VLOSSC1 4 x ESRC1 x ILOAD, where
ESRC1 is the ESR of capacitor C1.
3. Output or reservoir (C2) capacitor ESR:
VLOSSC2 = ESRC2 x ILOAD, where ESRC2
is the ESR of capacitor C2.
IncreasingthevalueofC2and/ordecreasingitsESRwill
reduce noise and ripple.
Doc. No. 5000, Rev. U
9
CAT660
TYPICAL APPLICATIONS
VOLTAGE INVERSION POSITIVE-TO-NEGATIVE
The CAT660 easily provides a negative supply voltage from a positive supply in the system. Figure 7 shows a typical
circuit. The LV pin may be left floating for positive input voltages at or above 3.3V.
V
1
2
3
4
8
7
6
5
IN
1.5V to 5.5V
BOOST/FC
V+
NC
+
CAP+CAT660 OSC
GND
LV
C1
CAP-
OUT
V
= -V
OUT
IN
C2
+
Figure 7: Voltage Inverter
POSITIVE VOLTAGE DOUBLER
The voltage doubler circuit shown in figure 8 gives VOUT = 2 x VIN for input voltages from 2.5V to 5.5V.
1N5817*
1
2
3
4
8
7
6
5
V
= 2V
IN
BOOST/FC
V+
OUT
+
CAP+ CAT660OSC
+
GND
LV
V
IN
2.5V to 5.5V
CAP-
OUT
*SCHOTTKY DIODE IS FOR START-UP ONLY
Figure 8: Voltage Doubler
Doc. No. 5000, Rev. U
10
CAT660
PRECISION VOLTAGE DIVIDER
A precision voltage divider is shown in figure 9. With very light load currents under 100nA, the voltage at pin 2 will be
within 0.002% of V+/2 . Output voltage accuracy decreases with increasing load.
+
V
1
2
3
4
8
7
6
5
BOOST/FC
CAP+
V+
OSC
LV
3V to 11V
+
CAT660
GND
CAP-
OUT
+
2
V
+ 0.002%
+
I < 100nA
L
Figure 9: Precision Voltage Divider (Load ≤ 100nA)
BATTERY VOLTAGE SPLITTER
Positive and negative voltages that track each other can be obtained from a battery. Figure 10 shows how a 9V battery
can provide symmetrical positive and negative voltages equal to one-half the battery voltage.
V
BATTERY
1
2
3
4
8
7
6
5
V
BAT
2
BAT
C1
BOOST/FC
CAP+
V+
OSC
LV
+
(4.5V)
9V
+
CAT660
GND
CAP-
3V < V
< 11V
BAT
V
150µF
BAT
2
OUT
-
(-4.5V)
C2
150µF
+
Figure 10: Battery Splitter
Doc. No. 5000, Rev. U
11
CAT660
CASCADE OPERATION FOR HIGHER NEGATIVE VOLTAGES
The CAT660 can be cascaded as shown in figure 11 to generate more negative voltage levels. The output resistance
is approximately the sum of the individual CAT660 output resistance.
VOUT= -N x VIN, where N represents the number of cascaded devices.
+V
IN
8
8
5
2
3
2
3
CAT660
"1"
CAT660
"N"
+
+
+
C1
C1
5
4
4
V
= -NV
IN
OUT
C2
+
C2
Figure 11: Cascading to Increase Output Voltage
PARALLEL OPERATION
Paralleling CAT660 devices will lower output resistance. As shown in figure 12, each device requires its own pump
capacitor, C2, but the output reservoir capacitor is shared with all devices. The value of C2 should be increased by
a factor of N, where N is the number of devices.
The output impedance of the combined CAT660's is:
R
(Of the CAT660)
OUT
N (Number of devices)
R
(Of "N" CAT660’s)=
OUT
+V
IN
8
8
2
3
2
CAT660
"1"
CAT660
+
+
3
C1
"N"
C1
5
4
5
4
C2
+
Figure 12: Paralleling Devices Reduce Output Resistance
Doc. No. 5000, Rev. U
12
CAT660
PACKAGE MECHANICAL DRAWINGS
8-LEAD 150 WIDE SOIC (S, X)
0.0099 (0.25)
0.0196 (0.50)
X 45
˚
0.0075 (0.19)
0.0098 (0.25)
0.149 (3.80)
0.1574 (4.00)
0.2284 (5.80)
0.2440 (6.20)
0˚-8˚
0.016 (0.40)
0.050 (1.27)
D
Dimension D
Min
0.0532 (1.35)
0.0688 (1.75)
Pkg
Max
8L
0.1890(4.80)
0.1968(5.00)
0.050 (1.27) BSC
0.0040 (0.10)
0.0098 (0.25)
0.013 (0.33)
0.020 (0.51)
8-LEAD 300 MIL WIDE PLASTIC DIP (P)
0.300 (7.62)
0.325 (8.26)
0.245 (6.17)
0.295 (7.49)
D
0.310 (7.87)
0.380 (9.65)
0.120 (3.05)
0.180 (4.57) MAX
0.150 (3.81)
Dimension D
Pkg
Min
Max
0.015 (0.38)
0.110 (2.79)
0.150 (3.81)
—
8L
0.355 (9.02)
0.400 (10.16)
0.100 (2.54)
BSC
0.045 (1.14)
0.060 (1.52)
0.014 (0.36)
0.022 (0.56)
Notes:
1. Complies with JEDEC Publication 95 MS001 dimensions; however, some of the dimensions may be more stringent.
2. All linear dimensions are in inches and parenthetically in millimeters.
Doc. No. 5000, Rev. U
13
CAT660
8-PAD TDFN (RD8, ZD8)
0.75+0.05
A
8
5
B
0.0-0.05
1
4
4.00+0.10
(S)
PIN 1
INDEX AREA
0.20 REF.
C
8
5
DAP SIZE 3.5 X 2.4
0.10 MAX TYP.
NOTE:
0.15
0.15
0.20
1. ALL DIMENSIONS ARE IN mm.
ANGLES IN DEGREES.
PIN 1 ID
2. COPLANARITY APPLIES TO THE
EXPOSED PAD AS WELL AS
THE TERMINALS.
0.20
COPLANARITY SHALL NOT
EXCEED 0.08mm.
3. WARPAGE SHALL NOT
EXCEED 0.10mm.
0.50+0.10 (8x)
0.80 TYP. (6x)
0.30+0.05 (8x)
4. PACKAGE LENGTH/PACKAGE
WIDTH ARE CONSIDERED AS
SPECIAL CHARACTERISTIC. (S)
2.40 REF. (2x)
Doc. No. 5000, Rev. U
14
CAT660
REVISION HISTORY
Date
Rev.
Reason
10/6/2003
10/7/2003
R
S
Updated Typical Operating Characteristics data plots
Updated Electrical Characteristics - Output Resistance
and Supply Current
Updated Typical Operating Characteristics data plots
Updated Description - eliminated Commercial temp range
Updated ordering information - eliminated Commercial temp range
Updated operating ambient temperature ranges
Changed ordering information for CAT660EXA to CAT660EVA
10/15/2003
1/20/2005
T
U
Changed ordering information for CAT660EXA-TE13 to CAT660EVA-TE13
Doc. No. 5000, Rev. U
15
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Corporate Headquarters
1250 Borregas Avenue
Sunnyvale, CA 94089
Phone: 408.542.1000
Publication #: 5000
Revison:
Issue date:
Type:
U
1/20/2005
Preliminary
Fax: 408.542.1200
www.catalyst-semiconductor.com
16
相关型号：
CAT660EVA-TE13
SWITCHED CAPACITOR CONVERTER, PDSO8, 0.150 INCH, LEAD AND HALOGEN FREE, SOIC-8
ONSEMI
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