CAT150169MWI-G [CATALYST]

EEPROM,;
CAT150169MWI-G
型号: CAT150169MWI-G
厂家: CATALYST SEMICONDUCTOR    CATALYST SEMICONDUCTOR
描述:

EEPROM,

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟 光电二极管 内存集成电路
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CAT15008, CAT15016  
Voltage Supervisor with 8-Kb and 16-Kb  
SPI Serial CMOS EEPROM  
FEATURES  
DESCRIPTION  
The CAT15008/16 (see table below) are memory and  
supervisory solutions for microcontroller based systems. A  
CMOS serial EEPROM memory and a system power  
supervisor with brown-out protection are integrated  
together. Memory interface is via SPI bus serial  
interface.  
„ Precision Power Supply Voltage Monitor  
ƒ 5V, 3.3V, 3V & 2.5V systems  
ƒ 7 threshold voltage options  
„ Active High or Low Reset  
ƒ Valid reset guaranteed at VCC = 1V  
„ 10MHz SPI compatible  
The CAT15008/16 provides a precision VCC sense  
circuit with two reset output options: CMOS active low  
output or CMOS active high. The RESET output is  
active whenever VCC is below the reset threshold or  
falls below the reset threshold voltage.  
„ 32-byte page write buffer  
„ Low power CMOS technology  
„ 1,000,000 Program/Erase cycles  
„ 100 year data retention  
The power supply monitor and reset circuit protect  
system controllers during power up/down and against  
brownout conditions. Seven reset threshold voltages  
support 5V, 3.3V, 3V and 2.5V systems. If power  
supply voltages are out of tolerance reset signals  
become active, preventing the system microcontroller,  
ASIC or peripherals from operating. Reset signals  
become inactive typically 240ms after the supply  
voltage exceeds the reset threshold level.  
„ Industrial temperature range  
„ RoHS-compliant 8-pin SOIC package  
For Ordering Information details, see page 14.  
PIN CONFIGURATION  
SOIC (W)  
MEMORY SIZE SELECTOR  
¯¯  
CS  
1
2
3
4
8
7
6
5
VCC  
Product  
15008  
Memory density  
8-Kbit  
¯¯¯¯  
SO  
RST/RST  
¯¯¯  
WP  
SCK  
15016  
16-Kbit  
SI  
VSS  
PIN FUNCTION  
THRESHOLD SUFFIX SELECTOR  
Pin Name  
Function  
Nominal Threshold  
Voltage  
Threshold Suffix  
Designation  
¯¯  
CS  
Chip Select  
4.63V  
4.38V  
4.00V  
3.08V  
2.93V  
2.63V  
2.32V  
L
M
J
SO  
Serial Data Output  
Write Protect  
Ground  
¯¯¯  
WP  
VSS  
SI  
T
S
R
Z
Serial Data Input  
Serial Clock Input  
Reset Output  
Power Supply  
SCK  
¯¯¯¯  
RST/RST  
VCC  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
1
Doc. No. 1125 Rev. A  
CAT15008, CAT15016  
BLOCK DIAGRAM  
VCC  
SO  
SCK  
SI  
VOLTAGE  
DETECTOR  
EEPROM  
RST or RST  
CS  
WP  
VSS  
ABSOLUTE MAXIMUM RATINGS(1)  
Parameters  
Ratings  
Units  
°C  
Storage Temperature  
Voltage on Any Pin with Respect to Ground(2)  
-65 to +150  
-0.5 to +6.5  
V
RELIABILITY CHARACTERISTICS(3)  
Symbol Parameter  
NEND(4) Endurance  
Min  
1,000,000  
100  
Units  
Program/ Erase Cycles  
Years  
TDR  
Data Retention  
D.C. OPERATING CHARACTERISTICS  
VCC = +2.5V to +5.5V unless otherwise specified.  
Limits  
Min.  
Typ.  
Max.  
2
Symbol Parameter  
ICC Supply Current  
Test Condition  
Units  
Read or Write at 10MHz, SO open  
mA  
¯¯  
12  
10  
25  
20  
2
VCC < 5.5V; VIN = VSS or VCC, CS = VCC  
ISB  
Standby Current  
μA  
¯¯  
CC < 3.6V; VIN = VSS or VCC, CS = VCC  
V
IL  
I/O Pin Leakage  
Pin at GND or VCC  
μA  
VIL  
Input Low Voltage  
-0.5  
0.3 VCC  
V
VIH  
VOL  
VOH  
Input High Voltage  
Output Low Voltage  
0.7 VCC  
VCC + 0.5  
0.4  
V
V
V
VCC 2.5V, IOL = 3.0mA  
VCC 2.5V, IOH = -1.6mA  
Output High Voltage VCC - 0.8  
Notes:  
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this  
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.  
(2) The DC input voltage on any pin should not be lower than -0.5V or higher than VCC + 0.5V. During transitions, the voltage on any pin may  
undershoot to no less than -1.5V or overshoot to no more than VCC + 1.5V, for periods of less than 20ns.  
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100  
and JEDEC test methods.  
(4) Page Mode, VCC = 5V, 25°C  
Doc. No. 1125 Rev. A  
2
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT15008, CAT15016  
A.C. CHARACTERISTICS (MEMORY)(1)  
VCC = 2.5V to 5.5V, TA = -40°C to 85°C, unless otherwise specified.  
Symbol Parameter  
Min.  
DC  
20  
Max.  
Units  
MHz  
ns  
fSCK  
tSU  
tH  
Clock Frequency  
Data Setup Time  
Data Hold Time  
SCK High Time  
SCK Low Time  
10  
20  
ns  
tWH  
tWL  
tLZ  
40  
ns  
40  
ns  
¯¯¯¯¯  
HOLD to Output Low Z  
25  
2
ns  
(2)  
tRI  
Input Rise Time  
Input Fall Time  
µs  
(2)  
tFI  
2
µs  
¯¯¯¯¯  
tHD  
tCD  
0
ns  
HOLD Setup Time  
¯¯¯¯¯  
HOLD Hold Time  
10  
ns  
tV  
Output Valid from Clock Low  
Output Hold Time  
40  
ns  
tHO  
0
ns  
tDIS  
tHZ  
Output Disable Time  
20  
25  
ns  
¯¯¯¯¯  
HOLD to Output High Z  
ns  
¯¯  
tCS  
15  
15  
15  
10  
10  
ns  
CS High Time  
¯¯  
tCSS  
tCSH  
tWPS  
tWPH  
ns  
CS Setup Time  
¯¯  
ns  
CS Hold Time  
¯¯¯  
ns  
WP Setup Time  
¯¯¯  
WP Hold Time  
ns  
(4)  
tWC  
Write Cycle Time  
5
1
ms  
ms  
(2) (3)  
tPU  
Power-up to Ready Mode  
Notes:  
(1) Test conditions according to “A.C. Test Conditions” table.  
(2) Tested initially and after a design or process change that affects this parameter.  
(3) tPU is the delay between the time VCC is stable and the device is ready to accept commands.  
¯¯  
tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.  
(4)  
A.C. TEST CONDITIONS  
Input Rise and Fall Times  
Input Levels  
10ns  
0.3 VCC to 0.7 VCC  
Timing Reference Levels  
Output Load  
0.5 VCC  
Current Source: IOL max/ IOH max; CL = 50pF  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
3
Doc. No. 1125 Rev. A  
CAT15008, CAT15016  
ELECTRICAL CHARACTERISTICS (SUPERVISORY FUNCTION)  
VCC = Full range, TA = -40ºC to +85ºC unless otherwise noted. Typical values at TA = +25ºC and VCC = 5V for  
L/M/J versions, VCC = 3.3V for T/S versions, VCC = 3V for R version and VCC = 2.5V for Z version.  
Symbol  
Parameter  
Threshold Conditions  
Min  
Typ  
Max Units  
4.70  
VTH  
Reset Threshold Voltage  
TA = +25ºC  
L
4.56  
4.50  
4.31  
4.25  
3.93  
3.89  
3.04  
3.00  
2.89  
2.85  
2.59  
2.55  
2.28  
2.25  
4.63  
TA = -40ºC to +85ºC  
4.75  
TA = +25ºC  
4.38  
4.00  
3.08  
2.93  
2.63  
2.32  
4.45  
M
J
TA = -40ºC to +85ºC  
TA = +25ºC  
4.50  
4.06  
TA = -40ºC to +85ºC  
TA = +25ºC  
4.10  
3.11  
V
T
S
R
Z
TA = -40ºC to +85ºC  
TA = +25ºC  
3.15  
2.96  
3.00  
2.66  
2.70  
2.35  
2.38  
TA = -40ºC to +85ºC  
TA = +25ºC  
TA = -40ºC to +85ºC  
TA = +25ºC  
TA = -40ºC to +85ºC  
Symbol Parameter  
Reset Threshold Tempco  
VCC to Reset Delay(2)  
Conditions  
Min  
Typ(1) Max Units  
30  
20  
ppm/ºC  
µs  
tRPD  
VCC = VTH to (VTH -100mV)  
TA = -40ºC to +85ºC  
tPURST Reset Active Timeout Period  
140  
240  
460  
0.3  
0.4  
0.3  
ms  
V
VCC = VTH min, ISINK = 1.2mA  
R/S/T/Z  
¯¯¯¯¯¯  
RESET Output Voltage Low  
VCC = VTH min, ISINK = 3.2mA  
J/L/M  
(Push-pull, active LOW,  
CAT150xx9)  
VOL  
VCC > 1.0V, ISINK = 50µA  
VCC = VTH max, ISOURCE = -500µA  
R/S/T/Z  
0.8VCC  
¯¯¯¯¯¯  
(Push-pull, active LOW,  
CAT150xx9)  
RESET Output Voltage High  
VOH  
V
VCC = VTH max, ISOURCE = -800µA  
J/L/M  
VCC - 1.5  
VCC > VTH max, ISINK = 1.2mA  
R/S/T/Z  
RESET Output Voltage Low  
0.3  
0.4  
VOL  
V
V
(Push-pull, active HIGH,  
CAT150xx1)  
VCC > VTH max, ISINK = 3.2mA  
J/L/M  
RESET Output Voltage High  
1.8V < VCC VTH min,  
ISOURCE = -150µA  
VOH  
0.8VCC  
(Push-pull, active HIGH,  
CAT150xx1)  
Notes:  
(1) Production testing done at TA = +25ºC; limits over temperature guaranteed by design only.  
(2) RESET output for the CAT150xx9; RESET output for the CAT150xx1.  
Doc. No. 1125 Rev. A  
4
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT15008, CAT15016  
PIN DESCRIPTION  
DEVICE OPERATION  
¯¯¯¯¯¯  
RESET/RESET: Reset output is available in two  
The CAT15008/16 products combine the accurate  
voltage monitoring capabilities of a standalone voltage  
supervisor with the high quality and reliability of  
standard EEPROMs from Catalyst Semiconductor.  
versions: CMOS Active Low (CAT150xx9) and CMOS  
Active High (CAT150xx1). Both versions are push-pull  
outputs for high efficiency.  
SI: The serial data input pin accepts op-codes,  
addresses and data. In SPI modes (0,0) and (1,1)  
input data is latched on the rising edge of the SCK  
clock input.  
RESET CONTROLLER DESCRIPTION  
The reset signal is asserted LOW for the CAT150xx9  
and HIGH for the CAT150xx1 when the power supply  
voltage falls below the threshold trip voltage and  
remains asserted for at least 140ms (tPURST) after the  
power supply voltage has risen above the threshold.  
Reset output timing is shown in Figure 1.  
SO: The serial data output pin is used to transfer data  
out of the device. In SPI modes (0,0) and (1,1) data is  
shifted out on the falling edge of the SCK clock.  
SCK: The serial clock input pin accepts the clock  
provided by the host and used for synchronizing  
communication between host and CAT15008/16.  
The CAT15008/16 devices protect µPs against brown-out  
failure. Short duration VCC transients of 4µsec or less and  
100mV amplitude typically do not generate a Reset pulse.  
¯¯  
CS: The chip select input pin is used to enable/disable  
¯¯  
the CAT15008/16. When CS is high, the SO output is  
tri-stated (high impedance) and the device is in  
Standby Mode (unless an internal write operation is in  
progress). Every communication session between host  
and CAT15008/16 must be preceded by a high to low  
transition and concluded with a low to high transition of  
¯¯  
the CS input.  
¯¯¯  
WP: The write protect input pin will allow all write  
¯¯¯  
operations to the device when held high. When WP  
pin is tied low and the WPEN bit in the Status  
Register (refer to Status Register description, later in  
this Data Sheet) is set to “1”, writing to the Status  
Register is disabled.  
VTH  
VCC  
V
RVALID  
tRPD  
tPURST  
tRPD  
tPURST  
RESET  
RESET  
CAT150xx9  
CAT150xx1  
Figure 1. RESET Output Timing  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
5
Doc. No. 1125 Rev. A  
CAT15008, CAT15016  
Figure 2 shows the maximum pulse duration of  
negative-going VCC transients that do not cause a reset  
condition. As the amplitude of the transient goes further  
below the threshold (increasing VTH - VCC), the  
maximum pulse duration decreases. In this test, the  
VCC starts from an initial voltage of 0.5V above the  
threshold and drops below it by the amplitude of the  
overdrive voltage (VTH - VCC).  
EMBEDDED EEPROM DESCRIPTION  
The CAT15008/16 devices support the Serial Peripheral  
Interface (SPI) bus protocol, modes (0,0) and (1,1). The  
device contains an 8-bit instruction register. The  
instruction set and associated op-codes are listed in  
Table 1.  
Reading data stored in the CAT15008/16 is accom–  
plished by simply providing the READ command and an  
address. Writing to the CAT15008/16, in addition to a  
WRITE command, address and data, also requires  
enabling the device for writing by first setting certain bits  
in a Status Register, as will be explained later.  
T
AMB  
= 25ºC  
¯¯  
After a high to low transition on the CS input pin, the  
CAT15008/16 will accept any one of the six instruction  
op-codes listed in Table 1 and will ignore all other  
possible 8-bit combinations. The communication  
protocol follows the timing from Figure 3.  
CAT150xxZ  
CAT150xxM  
Table 1: Instruction Set  
Instruction  
WREN  
WRDI  
Opcode  
Operation  
0000 0110 Enable Write Operations  
0000 0100 Disable Write Operations  
0000 0101 Read Status Register  
0000 0001 Write Status Register  
0000 0011 Read Data from Memory  
0000 0010 Write Data to Memory  
RESET OVERDRIVE V - V  
[mV]  
TH  
CC  
RDSR  
Figure 2. Maximum Transient Duration without  
Causing a Reset Pulse vs. Overdrive Voltage  
WRSR  
READ  
WRITE  
Figure 3. Synchronous Data Timing  
t
CS  
V
IH  
CS  
V
IL  
t
t
CSH  
CSS  
V
V
IH  
t
t
WL  
SCK  
SI  
WH  
t
IL  
t
H
SU  
V
IH  
VALID IN  
V
IL  
t
RI  
FI  
t
t
V
t
t
HO  
DIS  
V
OH  
HI-Z  
HI-Z  
SO  
V
OL  
Note: Dashed Line = mode (1, 1) - - - - - -  
Doc. No. 1125 Rev. A  
6
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT15008, CAT15016  
STATUS REGISTER  
The Status Register, as shown in Table 2, contains a  
number of status and control bits.  
user is allowed to protect a quarter, one half or the entire  
memory, by setting these bits according to Table 3. The  
protected blocks then become read-only.  
¯¯¯¯  
The RDY (Ready) bit indicates whether the device is  
busy with a write operation. This bit is automatically  
set to 1 during an internal write cycle, and reset to 0  
when the device is ready to accept commands. For  
the host, this bit is read only.  
The WPEN (Write Protect Enable) bit acts as an enable  
¯¯¯  
for the WP pin. Hardware write protection is enabled  
¯¯¯  
when the WP pin is low and the WPEN bit is 1. This  
condition prevents writing to the status register and to  
the block protected sections of memory. While  
hardware write protection is active, only the non-block  
protected memory can be written. Hardware write  
The WEL (Write Enable Latch) bit is set/reset by the  
WREN/WRDI commands. When set to 1, the device is  
in a Write Enable state and when set to 0, the device  
is in a Write Disable state.  
¯¯¯  
protection is disabled when the WP pin is high or the  
¯¯¯  
WPEN bit is 0. The WPEN bit, WP pin and WEL bit  
The BP0 and BP1 (Block Protect) bits determine which  
blocks are currently write protected. They are set by the  
user with the WRSR command and are non-volatile. The  
combine to either permit or inhibit Write operations, as  
detailed in Table 4.  
Table 2. Status Register  
7
6
0
5
0
4
0
3
2
1
0
WPEN  
BP1  
BP0  
WEL  
¯R¯D¯Y¯  
Table 3. Block Protection Bits  
Status Register Bits  
Array Address Protected  
Protection  
BP1  
BP0  
0
0
None  
No Protection  
15008: 0300-03FF  
15016: 0600-07FF  
15008: 0200-03FF  
15016: 0400-07FF  
15008: 0000-03FF  
15016: 0000-07FF  
0
1
1
1
0
1
Quarter Array Protection  
Half Array Protection  
Full Array Protection  
Table 4. Write Protect Enable Operation  
¯¯¯  
WP  
WPEN  
WEL  
Protected Blocks  
Protected  
Unprotected Blocks  
Status Register  
Protected  
Writable  
0
0
1
1
X
X
X
0
1
0
1
0
1
Protected  
Writable  
Protected  
Writable  
Protected  
Writable  
X
Protected  
Low  
Low  
High  
High  
Protected  
Protected  
Protected  
Protected  
Writable  
Protected  
Protected  
Protected  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
7
Doc. No. 1125 Rev. A  
CAT15008, CAT15016  
WRITE OPERATIONS  
¯¯  
The CAT15008/16 device powers up into a write disable  
state. The device contains a Write Enable Latch (WEL)  
which must be set before attempting to write to the  
memory array or to the status register. In addition, the  
address of the memory location(s) to be written must be  
outside the protected area, as defined by BP0 and BP1  
bits from the status register.  
take the CS input high after the WREN instruction, as  
otherwise the Write Enable Latch will not be properly  
set. WREN timing is illustrated in Figure 4. The WREN  
instruction must be sent prior any WRITE or WRSR  
instruction.  
The internal write enable latch is reset by sending the  
WRDI instruction as shown in Figure 5. Disabling write  
operations by resetting the WEL bit, will protect the  
device against inadvertent writes.  
Write Enable and Write Disable  
The internal Write Enable Latch and the corresponding  
Status Register WEL bit are set by sending the WREN  
instruction to the CAT15008/16. Care must be taken to  
Figure 4. WREN Timing  
CS  
SCK  
1
1
0
SI  
0
0
0
0
0
HIGH IMPEDANCE  
SO  
Note: Dashed Line = mode (1, 1) - - - - - -  
Figure 5. WRDI Timing  
CS  
SCK  
SI  
1
0
0
0
0
0
0
0
HIGH IMPEDANCE  
SO  
Note: Dashed Line = mode (1, 1) - - - - - -  
Doc. No. 1125 Rev. A  
8
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT15008, CAT15016  
Byte Write  
Page Write  
Once the WEL bit is set, the user may execute a write  
sequence, by sending a WRITE instruction, a 16-bit  
address and data as shown in Figure 6. Only 10  
significant address bits are used by the CAT15008  
and 11 by the CAT15016. The rest are don’t care bits,  
as shown in Table 5. Internal programming will start  
After sending the first data byte to the CAT15008/16,  
the host may continue sending data, up to a total of 32  
bytes, according to timing shown in Figure 7. After  
each data byte, the lower order address bits are  
automatically incremented, while the higher order  
address bits (page address) remain unchanged. If  
during this process the end of page is exceeded, then  
loading will “roll over” to the first byte in the page, thus  
possibly overwriting previoualy loaded data. Following  
completion of the write cycle, the CAT15008/16 is  
automatically returned to the write disable state.  
¯¯  
after the low to high CS transition. During an internal  
write cycle, all commands, except for RDSR (Read  
¯¯¯¯  
Status Register) will be ignored. The RDY bit will  
¯¯¯¯  
indicate if the internal write cycle is in progress (RDY  
high), or the the device is ready to accept commands  
¯¯¯¯  
(RDY low).  
Table 5. Byte Address  
Device  
Address Significant Bits  
A9 - A0  
Address Don't Care Bits  
A15 - A10  
# Address Clock Pulse  
CAT15008  
CAT15016  
16  
16  
A10 - A0  
A15 - A11  
Figure 6. Byte WRITE Timing  
CS  
0
1
2
3
4
5
6
7
8
21 22 23 24 25 26 27 28 29 30 31  
SCK  
SI  
OPCODE  
BYTE ADDRESS*  
DATA IN  
A
A
0
D7 D6 D5 D4 D3 D2 D1 D0  
0
0
0
0
0
0
1
0
N
HIGH IMPEDANCE  
SO  
* Please check the Byte Address Table (Table 5)  
Note: Dashed Line = mode (1, 1) - - - - - -  
Figure 7. Page WRITE Timing  
CS  
24+(N-1)x8-1..24+(N-1)x8 24+Nx8-1  
0
1
2
3
4
5
6
7
8
21 22 23  
32-39  
24-31  
SCK  
SI  
DATA IN  
Data Data  
Byte 2 Byte 3  
BYTE ADDRESS*  
OPCODE  
Data  
Data Byte N  
0
0
0
0
0
0
1
0
A
A
0
0
Byte 1  
N
7..1  
HIGH IMPEDANCE  
SO  
*Please check the Byte Address Table. (Table 5)  
Note: Dashed Line = mode (1, 1) - - - - - -  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
9
Doc. No. 1125 Rev. A  
CAT15008, CAT15016  
Write Status Register  
Write Protection  
¯¯¯  
The Status Register is written by sending a WRSR  
instruction according to timing shown in Figure 8. Only  
bits 2, 3 and 7 can be written using the WRSR  
command.  
The Write Protect (WP) pin can be used to protect the  
Block Protect bits BP0 and BP1 against being  
inadvertently altered. When WP is low and the WPEN  
bit is set to “1”, write operations to the Status Register  
¯¯¯  
¯¯¯  
¯¯  
are inhibited. WP going low while CS is still low will  
interrupt a write to the status register. If the internal  
¯¯¯  
write cycle has already been initiated, WP going low  
will have no effect on any write operation to the Status  
¯¯¯  
Register. The WP pin function is blocked when the  
¯¯¯  
WPEN bit is set to “0”. The WP input timing is shown  
in Figure 9.  
Figure 8. WRSR Timing  
CS  
0
1
2
3
4
5
6
7
1
8
9
6
10  
5
11  
4
12  
13  
2
14  
1
15  
0
SCK  
OPCODE  
DATA IN  
SI  
0
0
0
0
0
0
0
7
3
MSB  
HIGH IMPEDANCE  
SO  
Note: Dashed Line = mode (1, 1) - - - - - -  
¯¯¯  
Figure 9. WP Timing  
t
t
WPH  
WPS  
CS  
SCK  
WP  
WP  
Note: Dashed Line = mode (1, 1) - - - - - -  
Doc. No. 1125 Rev. A  
10  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT15008, CAT15016  
READ OPERATIONS  
Read Status Register  
Read from Memory Array  
To read the status register, the host simply sends a  
RDSR command. After receiving the last bit of the  
command, the CAT15008/16 will shift out the contents  
of the status register on the SO pin (Figure 11). The  
status register may be read at any time, including  
during an internal write cycle.  
To read from memory, the host sends a READ  
instruction followed by a 16-bit address (see Table 5 for  
the number of significant address bits).  
After receiving the last address bit, the CAT15008/16  
will respond by shifting out data on the SO pin (as  
shown in Figure 10). Sequentially stored data can be  
read out by simply continuing to run the clock. The  
internal address pointer is automatically incremented  
to the next higher address as data is shifted out. After  
reaching the highest memory address, the address  
counter “rolls over” to the lowest memory address, and  
the read cycle can be continued indefinitely. The read  
¯¯  
operation is terminated by taking CS high.  
Figure 10. READ Timing  
CS  
0
1
2
3
4
5
6
7
8
9
10  
20 21 22 23 24 25 26 27 28 29 30  
SCK  
OPCODE  
BYTE ADDRESS*  
A
A
0
SI  
0
0
0
0
0
0
1
1
N
DATA OUT  
HIGH IMPEDANCE  
SO  
7
6
5
4
3
2
1
0
MSB  
* Please check the Byte Address Table (Table 5).  
Note: Dashed Line = mode (1, 1) - - - - - -  
Figure 11. RDSR Timing  
CS  
0
1
2
3
4
5
1
6
0
7
1
8
9
10  
11  
12  
13  
14  
SCK  
OPCODE  
0
0
0
0
0
SI  
DATA OUT  
HIGH IMPEDANCE  
SO  
5
7
6
4
3
2
1
0
MSB  
Note: Dashed Line = mode (1, 1) - - - - - -  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
11  
Doc. No. 1125 Rev. A  
CAT15008, CAT15016  
PACKAGE OUTLINES  
8-LEAD 150 MIL SOIC (W)  
E1  
E
h x 45  
D
C
A
q1  
e
A1  
L
b
SYMBOL  
MIN  
0.10  
1.35  
0.33  
0.19  
4.80  
5.80  
3.80  
NOM  
MAX  
0.25  
1.75  
0.51  
0.25  
5.00  
6.20  
4.00  
A1  
A
b
C
D
E
E1  
e
1.27 BSC  
h
0.25  
0.40  
0°  
0.50  
1.27  
8°  
L
q1  
For current Tape and Reel information, download the PDF file from:  
http://www.catsemi.com/documents/tapeandreel.pdf.  
Notes:  
(1) All dimensions are in millimeters.  
(2) Complies with JEDEC specification MS-012 dimensions.  
Doc. No. 1125 Rev. A  
12  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
CAT15008, CAT15016  
PACKAGE MARKING  
8-LEAD SOIC  
150XXZWI  
4YYWWA  
CSI = Catalyst Semiconductor, Inc.  
XX = Device Code (see Marking Code table below)  
Z = Supervisory Output Code (see Marking Code table below)  
I = Temperature Range  
YY = Production Year  
WW = Production Week  
A = Product Revision  
4 = Lead Finish NiPdAu  
Device Marking Codes  
XX  
15008  
15016  
08  
16  
Supervisory Marking Codes  
Z
output active low  
output active high  
9
1
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
13  
Doc. No. 1125 Rev. A  
CAT15008, CAT15016  
ORDERING INFORMATION  
Prefix  
Device # Suffix  
15008  
CAT  
9
S
W
I
-
G
T3  
Lead Finish  
G: NiPdAu  
Company ID  
Temperature Range  
I = Industrial (-40ºC to 85ºC)  
Tape & Reel  
T: Tape & Reel  
3: 3000 units / Reel  
Product Type with  
Memory Density  
15008: 8-Kb EEPROM  
15016: 16-Kb EEPROM  
Package  
W: SOIC  
Reset Threshold Voltage  
L: 4.50V – 4.75V  
M: 4.25V – 4.50V  
J: 3.89V – 4.10V  
T: 3.00V – 3.15V  
S: 2.85V – 3.00V  
R: 2.55V – 2.70V  
Z: 2.25V – 2.38V  
Supervisor Output Type  
9: CMOS Active Low  
1: CMOS Active High  
Notes:  
(1) All packages are RoHS-compliant (Lead-free, Halogen-free).  
(2) The standard lead finish is NiPdAu pre-plated (PPF) lead frames.  
(3) The device used in the above example is a CAT150089SWI-GT3 (8Kb EEPROM, with Active Low CMOS Reset output, with a reset threshold  
between 2.85V - 3.00V, SOIC package, Industrial Temperature, NiPdAu, Tape and Reel.  
(4) For additional package and temperature options, please contact your nearest Catalyst Semiconductor Sales office.  
Doc. No. 1125 Rev. A  
14  
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
 
REVISION HISTORY  
Date  
Rev. Reason  
Initial Issue  
01/15/07  
A
Copyrights, Trademarks and Patents  
Trademarks and registered trademarks of Catalyst Semiconductor include each of the following:  
Beyond Memory™, DPP™, EZDim™, MiniPot™, and Quad-Mode™  
Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products.  
CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS  
PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE  
RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING  
OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES.  
Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal  
injury or death may occur.  
Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled  
"Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale.  
Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical  
semiconductor applications and may not be complete.  
Catalyst Semiconductor, Inc.  
Corporate Headquarters  
2975 Stender Way  
Santa Clara, CA 95054  
Phone: 408.542.1000  
Fax: 408.542.1200  
www.catsemi.com  
Document No: 1125  
Revision:  
A
Issue date:  
01/15/07  

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