XU444-4 [CALOGIC]
RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET;
| 型号： | XU444-4 |
| 厂家： | 
CALOGIC, LLC |
| 描述： | RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET 放大器 晶体管 |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel JFET
Monolithic Dual
LLC
U443 / U444
FEATURES
DESCRIPTION
High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical
Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical
Low Noise
The U443 Series is an N-Channel Monolithic Dual JFET
designed for high speed amplifier circuits. Featuring high gain
( > 6 mS typical), low leakage (< 1pA typical) and low noise
this device is an excellent choice for high performance test
and measurement, wideband amplifiers and VHF/UHF
circuits.
•
•
•
APPLICATIONS
Differential Wideband Amplifiers
VHF/UHF Amplifiers
Test and Measurement
Multi-Chip/Hybrids
•
•
ORDERING INFORMATION
•
Part
Package
Temperature Range
•
U443-4 Hermetic M0-002AG (TO-78) -55oC to +150oC
XU443-4 Sorted Chips in Carriers
-55oC to +150oC
PIN CONFIGURATION
TO-78
1 SOURCE 1
2 DRAIN 1
3 GATE 1
5
1
4
6
3
7
4 CASE/BODY
5 SOURCE 2
6 DRAIN 2
7 GATE 2
2
BOTTOM VIEW
G2
D2
S2
C
S1
G1
D1
CJ1
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS079 REV A
U443 / U444
LLC
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter/Test Condition
Symbol
Limit
Unit
Gate-Drain Voltage
Gate-Source Voltage
Gate-Gate Voltage
Forward Gate Current
Power Dissipation (per side)
(total)
VGD
VGS
VGG
IG
-25
-25
±50
50
367
500
3
4
V
V
V
mA
PD
mW
mW
mW/ oC
mW/ oC
oC
Power Derating
(per side)
(total)
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
TJ
Tstg
TL
-55 to 150
-65 to 200
300
oC
oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
U443
U444
SYMBOL
CHARACTERISTCS
TYP1
UNIT
TEST CONDITIONS
MIN MAX MIN MAX
STATIC
V(BR)GSS
VGS(OFF
IDSS
Gate-Source Breakdown Voltage
Gate-Source Cut off Voltage
Saturation Drain Current 2
-35
-3.5
15
-25
-1
6
-25
-1
6
IG = -1µA, VDS = 0V
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
V
)
-6
30
-6
30
mA
pA
nA
pA
nA
V
-1
-500
-500
V
GS = -15V, VDS = 0V
TA = 150oC
VDG = 10V, ID = 5mA
IGSS
Gate Reverse Current
-2
-1
-500
-500
IG
Gate Operating Current
-0.3
0.7
TA = 125oC
VGS(F)
Gate-Source Forward Voltage
IG = 1mA, VDS = 0V
DYNAMIC
gfs
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
6
70
3
4.5
9
4.5
9
mS
V
DG = 10V, ID = 5mA
f = 1kHz
gos
200
200
µS
Ciss
VDG = 10V, ID = 5mA
pF
f = 1MHz
Crss
Common-Source Reverse Transfer Capacitance
1
V
DG = 10V, ID = 5mA
en
Equivalent Input Noise Voltage
4
nV/ Hz
f = 10kHz
MATCHING
| VGS1-VGS2
|
Differential Gate-Source Voltage
6
10
20
mV
VDG = 10V, ID = 5mA
T = -55 to 25oC
20
20
∆ | VGS1-VGS2
∆T
|
Gate-Source Voltage Differential Change with
Temperature
V
DG =10V,
µV/ oC
T = 25 to 125oC
ID = 5mA
IDSS1
IDSS2
Saturation Drain Current Ratio
0.97
VDS = 10V, VGS = 0V
gfs1
gfs2
V
DG = 10V, ID = 5mA
Transconductance Ratio
0.97
85
f= 1 kHz
CMRR
Common Mode Rejection Ratio
dB
VDD = 5 to 10V, ID = 5mA
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle ≤ 3%.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS079 REV A
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