概述
数据手册XU310 概述
N-Channel JFET High Frequency Amplifier N沟道JFET高频放大器
XU310 数据手册
通过下载XU310数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载N-Channel JFET
High Frequency Amplifier
CORPORATION
U308 – U310
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
High Power Gain
Low Noise
Dynamic Range Greater The 100dB
Easily Matched to 75Ω Input
•
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Temperature. . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 4mW/oC
•
•
•
PIN CONFIGURATION
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
(TO-52)
ORDERING INFORMATION
Part
Package
Temperature Range
U308-10
Hermetic TO-52
-55oC to +150oC
XU308-10 Sorted Chips in Carriers
-55oC to +150oC
G, C
S
D
5021
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
U308
U309
U310
SYMBOL
PARAMETER
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
V
GS = -15V
-150
-150
-150
-150
-150
-150
pA
nA
IGSS
Gate Reverse Current
VGS = 0
TA = 125oC
BVGSS
VGS(off)
IDSS
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
IG = -1µA, VDS = 0
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0
IG = 10mA, VDS = 0
-25
-1.0
12
-25
-6.0 -1.0
-25
-4.0 -2.5
V
-6.0
60
Saturation Drain Current (Note 1)
Gate-Source Forward Voltage
60
12
30
24
mA
V
VGS(f)
1.0
1.0
1.0
Common-Gate Forward
Transconductance (Note 1)
gfg
10
17
10
10
17
10
10
17
10
mS
V
DS = 10V,
f = 1kHz
ID = 10mA
gogs
Cgd
Cgs
Common Gate Output Conductance
Drain-Gate Capacitance
250
2.5
5.0
250
2.5
5.0
250
2.5
5.0
µS
VGS = -10V, f = 1MHz
pF
VDS = 10V
(Note 2)
Gate-Source Capacitance
nV
√Hz
Equivalent Short Circuit
Input Noise Voltage
VDS = 10V,
D = 10mA
f = 100Hz
(Note 2)
en
I
U308 – U310
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
U308
U309
U310
SYMBOL
PARAMETER
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
15
15
15
f = 100MHz
f = 450MHz
f = 100MHz
Common-Gate Forward
Transconductance
gfg
14
14
14
µS
0.18
0.18
0.18
VDS = 10V,
Common-Gate Output
Conductance
gogs
Gpg
NF
ID = 10mA
f = 450MHz
f = 100MHz
f = 450MHz
f = 100MHz
f = 450MHz
0.32
0.32
0.32
(Note 2)
14
10
16
14
10
16
14
10
16
Common-Gate Power Gain
Noise Figure
11
11
11
dB
1.5 2.0
2.7 3.5
1.5 2.0
2.7 3.5
1.5 2.0
2.7 3.5
NOTES: 1. Pulse test duration = 2ms.
2. For design reference only, not 100% tested.
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