BL-BF331 [BRTLED]

Chip material: AlGaAs/ AlGaAs; 芯片材料:铝镓砷/铝镓砷
BL-BF331
型号: BL-BF331
厂家: BRTLED    BRTLED
描述:

Chip material: AlGaAs/ AlGaAs
芯片材料:铝镓砷/铝镓砷

文件: 总3页 (文件大小:150K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BL-BF331-AT  
Features:  
Package dimensions:  
1. Chip material: AlGaAs/ AlGaAs  
2. Emitted color : Super Red  
3. Lens Appearance : Water Clear  
4. Low power consumption.  
5. High efficiency.  
6. Versatile mounting on P.C. Board or panel.  
7. Low current requirement.  
8. 3mm diameter package.  
9. This product don’t contained restriction  
substance, compliance ROHS standard.  
Applications:  
1. TV set  
Notes:  
2. Monitor  
1. All dimensions are in millimeters (inches).  
3. Telephone  
2. Tolerance is ±0.25mm (0.01”) unless otherwise specified.  
3. Lead spacing is measured where the leads emerge from  
the package.  
4. Computer  
5. Circuit board  
4. Specifications are subject to change without notice.  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Power Dissipation  
Symbol  
Pd  
Rating  
Unit  
mW  
mA  
mA  
V
80  
Forward Current  
IF  
30  
150  
Peak Forward Current*1  
IFP  
Reverse Voltage  
VR  
5
-40~80℃  
-40~85℃  
260(for 5 seconds)  
Operating Temperature  
Storage Temperature  
Soldering Temperature  
Topr  
Tstg  
Tsol  
*1Condition for IFP is pulse of 1/10 duty and 0.1msec width.  
Ver.1.0 Page: 1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BL-BF331-AT  
Electrical and optical characteristics(Ta=25)  
Parameter  
Symbol  
VF  
Condition  
IF=20mA  
IF=20mA  
VR=5V  
Min.  
Typ.  
2.1  
500  
-
Max.  
Unit  
V
Forward Voltage  
-
-
-
-
-
-
-
2.6  
Luminous Intensity  
Reverse Current  
Peak Wave Length  
Dominant Wave Length  
Spectral Line Half-width  
Viewing Angle  
Iv  
-
mcd  
µA  
nm  
nm  
nm  
deg  
IR  
100  
λp  
λd  
λ  
2θ1/2  
IF=20mA  
IF=20mA  
IF=20mA  
IF=20mA  
660  
643  
20  
-
-
-
-
25  
Typical electro-optical characteristics curves  
Fig.1 Relative intensity vs. Wavelength  
Fig.2 Forward current derating curve  
vs. Ambient temperature  
1.0  
0.5  
0
60  
50  
40  
30  
20  
10  
0
610  
660  
710  
20  
40  
60  
80  
100  
Wavelength λ (nm)  
Ambient temperature Ta()  
Fig.3 Forward current vs. Forward voltage  
Fig.4 Relative luminous intensity  
vs. Ambient temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
1
2
3
4
5
-40  
-20  
0
20  
40  
60  
Forward voltage(V)  
Ambient temperature Ta()  
Fig.5 Relative luminous intensity  
vs. Forward current  
Fig.6 Radiation diagram  
0
10  
20  
2.0  
30  
1.5  
1.0  
40  
50  
1.0  
0.9  
0.8  
60  
70  
0.5  
0
0.7  
80  
90  
10  
20  
30  
40  
50  
0.5  
0.3  
0.1  
0.2  
0.4  
0.6  
Forward current (mA)  
Ver.1.0 Page: 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BL-BF331-AT  
Bin Limits  
1. Intensity Bin Limits (At IF= 20mA)  
Bin Code  
Min. (mcd)  
Max. (mcd)  
S
T
180  
250  
410  
620  
930  
360  
550  
U
V
820  
1230  
1840  
W
Binx  
Intensity bin code  
Ver.1.0 Page: 3 of 3  

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