BA-3D12UW [BRTLED]

super red chips, which are made from AlGaAs on GaAs substrate; 超级红筹股,这是在GaAs衬底制成的铝镓砷
BA-3D12UW
型号: BA-3D12UW
厂家: BRTLED    BRTLED
描述:

super red chips, which are made from AlGaAs on GaAs substrate
超级红筹股,这是在GaAs衬底制成的铝镓砷

文件: 总3页 (文件大小:144K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-3D12UW  
Package Dimensions :  
Features :  
1. Emitting area : 18.78×5.85mm)  
2. Low power requirement.  
19.80(.780)  
18.78(.739)  
0.50(.020)  
3. Excellent characters appearance.  
4. Solid state reliability.  
5.85(.230)  
6.80(.268)  
2.20(.087)  
5. Categorized for luminous intensity.  
6.40(.252)  
3.0(.118)MIN.  
0.5(.020)  
Description :  
2.54(.100)  
1. The BA-3D12UW have uniform  
emitting light.  
12.70(.500)  
2. This product use super red chips,  
which are made from AlGaAs on  
GaAs substrate.  
Notes:  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
specified.  
3. Specifications are subject to change without  
notice.  
3. This product have a white face and  
white segments.  
4. This product doesn't contain restriction  
substance, comply ROHS standard.  
Internal Circuit Diagram :  
佰鴻工業股份有限公司  
http://www.brtled.com  
Ver.1.0 Page 1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-3D12UW  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Symbol  
Rating  
Unit  
mW  
mA  
mA  
V
Power Dissipation Per Segment  
Forward Current Per Segment  
Peak Forward Current Per Segment  
Pd  
80  
IF  
30  
150  
IFP  
(Duty 1/10, 1KHZ)  
Reverse Voltage Per Segment  
Operating Temperature  
Storage Temperature  
VR  
5
-40~80℃  
-40~85℃  
260For 5 Seconds  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
-
Electrical And Optical Characteristics(Ta=25)  
Parameter  
Symbol Condition Min.  
Typ.  
1.7  
14.0  
-
Max.  
2.5  
-
Unit  
V
Forward Voltage Per Segment  
Luminous Intensity Per Segment  
Reverse Current Per Segment  
Peak Wave Length  
Vf  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
-
mcd  
µA  
IR  
-
-
100  
-
λp  
λd  
IF=10mA  
IF=10mA  
660  
-
nm  
nm  
nm  
Dominant Wave Length  
638  
648  
佰鴻工業股份有限公司  
λ  
Spectral Line Half-width  
IF=10mA  
-
20  
-
http://www.brtled.com  
Ver.1.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-3D12UW  
Typical Electro-Optical Characteristics Curves  
(25Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
1.0  
0.5  
0
570  
600  
630  
660  
690  
720  
750  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
1
2
3
4
5
-40 -20  
0
20  
40  
60  
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
50  
40  
3.0  
佰鴻工業股份有限公司  
20  
2.0  
30  
1.0  
http://www.brtled.com  
10  
0
0.0  
20 40 60 80 100 120  
10  
20  
30  
40  
50  
Forward Current(mA)  
Ambient Temperature Ta( C)  
Ver.1.0 Page 3 of 3  

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