BA-2E2UW [BRTLED]
hi-eff red chips, which are made from GaAsP on GaP substrate.; HI- EFF红筹股，这是对的GaP衬底制成的砷化镓。
| 型号： | BA-2E2UW |
| 厂家： | 
BRTLED |
| 描述： | hi-eff red chips, which are made from GaAsP on GaP substrate. |
| 文件： | 总3页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-2E2UW
●
Package Dimensions :
●
Features :
1. Emitting area : 12.8×6.3（mm）
2. Low power requirement.
6.30(.248)
7.50(.295)
5.08(.200)
3. Excellent characters appearance.
4. Solid state reliability.
12.80(.504)
13.90(.547)
7.80(.307)
5. Categorized for luminous intensity.
3.00(.118) MIN.
0.50(.020)
●
Description :
2.54x2=5.08(.200) NOM.
1. The BA-2E2UW have uniform emitting
light.
2. This product use hi-eff red chips, which
are made from GaAsP on GaP substrate.
3. This product have a white face and
white segments.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
● Internal Circuit Diagram :
2.1
Ver. Page 1 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-2E2UW
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Rating
Unit
mW
mA
mA
V
Power Dissipation Per Segment
Forward Current Per Segment
Peak Forward Current Per Segment
Pd
80
IF
30
150
IFP
(Duty 1/10, 1KHZ)
VR
Reverse Voltage Per Segment
Operating Temperature
Storage Temperature
5
-40℃~80℃
-40℃~85℃
260℃ For 5 Seconds
Topr
Tstg
Tsol
-
-
Soldering Temperature
(1/16" From Body)
-
● Electrical And Optical Characteristics(Ta=25℃)
Parameter
Forward Voltage Per Segment
Luminous Intensity Per Segment
Reverse Current Per Segment
Peak Wave Length
Symbol Condition Min.
Typ.
1.9
9.0
-
Max.
Unit
V
Vf
Iv
IF=10mA
IF=10mA
VR=5V
-
2.5
-
-
100
-
mcd
µA
IR
-
λp
λd
∆λ
IF=10mA
IF=10mA
IF=10mA
-
626
-
640
-
nm
nm
nm
Dominant Wave Length
636
-
Spectral Line Half-width
40
Ver.2.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-2E2UW
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
1.0
0.5
0
560
590
620
650
680
710
740
Wavelength(nm)
Fig.3 Relative Luminous
Intensity VS.
Fig.2 Forward Current VS.
Forward Voltage
Ambient Temperature
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
-40 -20
0
20
40
60
Ambient Temperature Ta( C)
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
Forward Current
50
3.0
2.0
40
30
20
1.0
0.0
10
0
0
20 40 60 80 100 120
0
10
20
30
40
50
Forward Current(mA)
Ambient Temperature Ta( C)
Ver.2.0 Page 3 of 3
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