TISP7125F3D [BOURNS]
MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS; MEDIUM ＆ HIGH- VOLTAGE TRIPLE元的双向晶闸管过电压保护
| 型号： | TISP7125F3D |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 文件： | 总19页 (文件大小：550K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T
TISP7125F3 THRU TISP7180F3,
TISP7240F3 THRU TISP7380F3
N
A
I
L
P
S
M
V
N
O
E
O
I
L
C
B
S
S
A
R
H
L
E
I
o
V
A
R
*
A
MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Patented Ion-Implanted Breakdown Region
- Precise DC and Dynamic Voltages
D Package (Top View)
G
T
NC
NC
R
1
8
7
6
5
V
V
DRM
V
(BO)
V
Device
2
NU
NU
G
3
4
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3†
100
120
145
180
200
220
240
275
270
125
150
180
240
260
290
320
350
380
NC - No internal connection.
NU - Non-usable; no external electrical connection should be
made to these pins.
Specified ratings require connection of pins 5 and 8.
SL Package (Top View)
† For new designs use ‘7350F3 instead of ‘7380F3
1
2
3
T
G
R
Planar Passivated Junctions
- Low Off-State Current.................................<10 µA
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
MD1XAB
I
TSP
A
Device Symbol
Waveshape
Standard
R
T
2/10
8/20
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
190
175
110
10/160
FCC Part 68
ITU-T K.20/21
FCC Part 68
10/700
70
10/560
50
45
10/1000
GR-1089-CORE
SD7XAB
............................................... UL Recognized Component
Description
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
The TISP7xxxF3 series are 3-point overvoltage protectors
designed for protecting against metallic (differential mode) and
simultaneous longitudinal (common mode) surges. Each terminal
pair has the same voltage limiting values and surge current
capability. This terminal pair surge capability ensures that the
protector can meet the simultaneous longitudinal surge require-
ment which is typically twice the metallic surge requirement.
How To Order
For Standard
For Lead Free
Termination Finish Termination Finish
Order As
TISP7xxxF3DR
TISP7xxxF3D
Order As
Device
Package
Carrier
Tape and Reel
Tube
TISP7xxxF3DR-S
TISP7xxxF3D-S
TISP7xxxF3
D, Small-outline
TISP7xxxF3
SL, Single-in-line
Tube
TISP7xxxF3SL
TISP7xxxF3SL-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Description (continued)
Each terminal pair has a symmetrical voltage-triggered thyristor characteristic. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
These medium and high voltage devices are offered in nine voltage variants to meet a range of battery and ringing voltage requirements. They
are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. Similar devices with working voltages of
58 V and 66 V are detailed in the TISP7072F3, TISP7082F3 data sheet.
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0 °C < T < 70 °C
A
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
100
120
145
180
200
220
240
275
270
V
V
DRM
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
330
190
100
175
110
95
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
I
A
PPSM
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
70
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
70
70
50
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
45
Non-repetitive peak on-state current, 0 °C < T < 70 °C (see Notes 1 and 3)
A
50 Hz, 1 s
D Package
SL Package
4.3
7.1
I
A
TSM
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
di /dt
250
A/µs
°C
T
Junction temperature
T
-65 to +150
-65 to +150
J
Storage temperature range
T
°C
stg
Initially, the TISP® device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP ® device
A
NOTES: 1.
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
2. See Thermal Information for derated I
values 0 °C < T < 70 °C and Applications Information for details on wave shapes.
PPSM
A
3. Above 70 °C, derate I
linearly to zero at 150 °C lead temperature.
TSM
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Electrical Characteristics for all Terminal Pairs, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
, 0 °C < T < 70 °C
Min
Typ
Max
Unit
Repetitive peak off-
state current
I
V
= V
±10
µA
DRM
D
DRM
A
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
±125
±150
±180
±240
±260
±290
±320
±350
±380
±143
±168
±198
±269
±289
±319
±349
±379
±409
±0.8
±5
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300 Ω
SOURCE
V
(BO)
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
Impulse breakover
voltage
V
V
(BO)
I
Breakover current
On-state voltage
Holding current
dv/dt = ±250 V/ms,
R
= 300 Ω
±0.1
A
V
A
(BO)
SOURCE
V
I = ±5 A, t = 100 µs
T
T
W
I
I = ±5 A, di/dt = - /+30 mA/ms
±0.15
±5
H
T
Critical rate of rise of
off-state voltage
Off-state current
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
kV/µs
µA
DRM
I
V
= ±50 V
±10
48
41
52
44
47
39
40
31
23
17
18
13
27
23
D
D
f = 1 MHz, V = 1 V rms, V = 0
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
37
31
40
34
36
30
31
24
17
13
14
10
20
17
d
D
f = 1 MHz, V = 1 V rms, V = -1 V
d
D
f = 1 MHz, V = 1 V rms, V = -2 V
d
D
f = 1 MHz, V = 1 V rms, V = -5 V
d
D
C
Off-state capacitance
pF
off
f = 1 MHz, V = 1 V rms, V = -50 V
d
D
f = 1 MHz, V = 1 V rms, V = -100 V
d
D
f = 1 MHz, V = 1 V rms, V
d
(see Note 4)
= 0
DTR
NOTE 4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias V , are
D
for the R-G and T-G terminals only. The last capacitance value, with bias V
, is for the T-R terminals.
DTR
Thermal Characteristics
Parameter
Junction to free air thermal resistance
Test Conditions
= 0.8 W, T = 25 °C
Min
Typ
Max
Unit
D Package
160
P
tot
A
Rθ
°C/W
JA
2
5 cm , FR4 PCB
SL Package
135
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
ITSP
Characteristic
ITSM
V(BO)
I(BO)
IH
IDRM
ID
VDRM
VD
+v
-v
ID
VD
VDRM
IDRM
IH
I(BO)
V(BO)
ITSM
Quadrant III
ITSP
Switching
Characteristic
PMXXAAA
-i
Figure 1. Voltage-Current Characteristic for T and R Terminals
T and G and R and G Measurements are Referenced to the G Terminal
T and R Measurements are Referenced to the R Terminal
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and G, or T and G Terminals
TISP7125F3 THRU TISP7180F3
TISP7240F3 THRU TISP7380F3
OFF-STATE CURRENT
vs
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC7MAC
TC7HAC
100
10
100
10
VD = 50 V
VD = 50 V
1
1
0·1
VD = -50 V
0·1
VD = -50 V
0·01
0·001
0·01
0·001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALIZED BREAKDOWN VOLTAGES
NORMALIZED BREAKDOWN VOLTAGES
vs
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC7HAE
TC7MAE
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
V(BO)
V(BR)M
V(BR)
V(BO)
V(BR)M
V(BR)
Normalized to V(BR)
Normalized to V(BR)
I(BR)
Positive Polarity
I(BR)
=
1 mA and 25 °C
=
1 mA and 25 °C
Positive Polarity
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 4.
Figure 5.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and G, or T and G Terminals
TISP7240F3 THRU TISP7380F3
NORMALIZED BREAKDOWN VOLTAGES
TISP7125F3 THRU TISP7180F3
NORMALIZED BREAKDOWN VOLTAGES
vs
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC7MAF
TC7HAF
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
V(BR)M
V(BO)
V(BO)
V(BR)M
Normalized to V(BR)
(BR) = 1 mA and 25 °C
Negative Polarity
Normalized to V(BR)
V(BR)
V(BR)
I
I
(BR) = 1 mA and 25 °C
Negative Polarity
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 6.
Figure 7.
ON-STATE CURRENT
vs
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
ON-STATE VOLTAGE
TC7HAL
TC7MAL
100
100
10
1
Positive Polarity
Positive Polarity
10
150 °C
25 °C
-40 °C
150 °C
25 °C
-40 °C
1
1
2
3
4
5
6
7 8 9
10
1
2
3
4
5
6
7
8 9 10
VT - On-State Voltage - V
Figure 9.
VT - On-State Voltage - V
Figure 8.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and G, or T and G Terminals
TISP7240F3 THRU TISP7380F3
TISP7125F3 THRU TISP7180F3
ON-STATE CURRENT
vs
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
ON-STATE VOLTAGE
TC7MAM
TC7HAM
100
10
1
100
10
1
Negative Polarity
Negative Polarity
150 °C
25 °C
150 °C
25 °C
-40 °C
-40 °C
1
2
3
4
5
6
7
8 9 10
1
2
3
4
5
6
7
8 9 10
VT - On-State Voltage - V
Figure 10.
VT - On-State Voltage - V
Figure 11.
HOLDING CURRENT & BREAKOVER CURRENT
vs
HOLDING CURRENT & BREAKOVER CURRENT
JUNCTION TEMPERATURE
TC7HAH
1.0
0.9
0.8
1·0
0·9
0·8
0·7
0·6
0.7
0.6
0·5
0·4
0.5
0.4
0·3
0·2
+I(BO)
0.3
0.2
IH
-I(BO)
0·1
0·09
0·08
0·07
0·06
0.1
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
T
T
J - Junction Temperature - °C
J - Junction Temperature - °C
Figure 12.
Figure 13.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and G, or T and G Terminals
TISP7125F3 THRU TISP7180F3
NORMALIZED BREAKOVER VOLTAGE
vs
TISP7240F3 THRU TISP7380F3
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
RATE OF RISE OF PRINCIPLE CURRENT
TC7MAU
TC7HAU
1.2
1.1
1.0
1.2
1.1
1.0
Positive
Positive
Negative
Negative
0·001
0·01
0·1
1
10
100
0·001
0·01
0·1
1
10
100
di/dt - Rate of Rise of Principle Current - A/µs
di/dt - Rate of Rise of Principle Current - A/µs
Figure 14.
Figure 15.
SURGE CURRENT
vs
SURGE CURRENT
vs
DECAY TIME
DECAY TIME
TC7MAA
TC7HAA
1000
100
10
1000
100
10
2
2
10
100
Decay Time - µs
Figure 16.
1000
10
100
Decay Time - µs
Figure 17.
1000
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
TISP7240F3 THRU TISP7380F3
TISP7125F3 THRU TISP7180F3
OFF-STATE CURRENT
vs
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC7MAD
TC7HAD
100
10
100
10
1
1
0·1
0·1
0·01
0·001
0·01
0·001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 18.
Figure 19.
NORMALIZED BREAKDOWN VOLTAGES
vs
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC7HAG
JUNCTION TEMPERATURE
TC7MAG
1.2
1.1
1.2
1.1
V(BO)
V(BO)
V(BR)M
V(BR)M
1.0
0.9
1.0
0.9
V(BR)
V(BR)
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 20.
Figure 21.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
TISP7125F3 THRU TISP7180F3
ON-STATE CURRENT
vs
TISP7240F3 THRU TISP7380F3
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
TC7MAK
ON-STATE VOLTAGE
TC7HAK
100
10
1
100
10
1
150 °C
25 °C
150 °C
25 °C
-40 °C
-40 °C
1
2
3
4
5
6
7
8 9 10
1
2
3
4
5
6
7
8 9 10
VT - On-State Voltage - V
Figure 22.
VT - On-State Voltage - V
Figure 23.
HOLDING CURRENT & BREAKOVER CURRENT
vs
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC7MAJ
TC7HAJ
1.0
0.9
0.8
1·0
0·9
0·8
0·7
0·6
0.7
0.6
0·5
0·4
0.5
0.4
0·3
0·2
I(BO)
0.3
0.2
IH
IH
I(BO)
0·1
0·09
0·08
0·07
0·06
0.1
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
- Junction Temperature - °C
- Junction Temperature - °C
TJ
TJ
Figure 24.
Figure 25.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
TISP7125F3 THRU TISP7180F3
NORMALIZED BREAKOVER VOLTAGE
vs
TISP7240F3 THRU TISP7380F3
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
RATE OF RISE OF PRINCIPLE CURRENT
TC7MAV
TC7HAV
1.2
1.1
1.0
1.2
1.1
1.0
0·001
0·01
0·1
1
10
100
0·001
0·01
0·1
1
10
100
di/dt - Rate of Rise of Principle Current - A/µs
di/dt - Rate of Rise of Principle Current - A/µs
Figure 26.
Figure 27.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Thermal Information
TISP7125F3 THRU TISP7180F3
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
TISP7240F3 THRU TISP7380F3
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION
CURRENT DURATION
TI7MAA
TI7HAA
VGEN = 350 Vrms
VGEN = 250 Vrms
GEN = 10 to 150 Ω
Ω
RGEN = 20 to 250
R
10
10
SL Package
SL Package
D Package
10
D Package
10
1
0·1
1
0·1
1
100
1000
1
100
1000
t - Current Duration - s
Figure 28.
t - Current Duration - s
Figure 29.
THERMAL RESPONSE
THERMAL RESPONSE
TI7MAB
TI7MAB
100
10
1
100
10
1
D Package
D Package
SL Package
SL Package
0·0001 0·001 0·01
0·1
1
10
100 1000
0·0001 0·001 0·01
0·1
1
10
100 1000
t - Power Pulse Duration - s
Figure 31.
t - Power Pulse Duration - s
Figure 30.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Thermal Information
Rating
Symbol
Value
Unit
Non-repetitive peak on-state pulse current, 0 °C < T < 70 °C (see Notes 5, 6 and 7)
A
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
320
175
90
150
90
I
A
PPSM
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, dual)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
70
65
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape)
65
65
10/560 (FCC Part 68, 10/560 voltage wave shape)
45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
40
Initially, the TISP® device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP® device
A
NOTES: 5.
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
6. See Applications Information for details on wave shapes.
7. Above 70 °C, derate I linearly to zero at 150 °C lead temperature.
PPSM
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Deployment
These devices are three terminal overvoltage protectors. They limit the voltage between three points in the circuit. Typically, this would be the
two line conductors and protective ground (Figure 32).
Th3
Th1
Th2
Figure 32. MULTI-POINT PROTECTION
In Figure 32, protective functions Th2 and Th3 limit the maximum voltage between each conductor and ground to their respective ±V
(BO)
values. Protective function Th1 limits the maximum voltage between the two conductors to its ±V
value.
(BO)
Lightning Surge
Wave Shape Notation
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of rise time in microseconds and a decay time in microseconds to 50 % of the maximum
amplitude. The notation used for the wave shape is rise time/decay time, without the microseconds quantity and the “/” between the two values
has no mathematical significance. A 50 A, 5/310 waveform would have a peak current value of 50 A, a rise time of 5 µs and a decay time of
®
310 µs. The TISP surge current graph comprehends the wave shapes of commonly used surges.
Generators
There are three categories of surge generator type: single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 open circuit voltage and
short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current
(e.g. 1.2/50 open circuit voltage and 8/20 short circuit current). Circuit specified generators usually equate to a combination generator,
although typically only the open circuit voltage wave shape is referenced (e.g. a 10/700 open circuit voltage generator typically produces a 5/
310 short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape produced is interme-
diate between the open circuit and short circuit values.
ITU-T 10/700 Generator
This circuit defined generator is specified in many standards. The descriptions and values are not consistent between standards and it is
important to realize that it is always the same generator being used.
Figure 33 shows the 10/700 generator circuit defined in ITU-T recommendation K.20 (10/96) “Resistibility of telecommunication switching
equipment to overvoltages and overcurrents”. The basic generator comprises of:
Capacitor C , charged to voltage V , which is the energy storage element
1
C
Switch SW to discharge the capacitor into the output shaping network
Shunt resistor R , series resistor R and shunt capacitor C form the output shaping network
1
2
2
Series feed resistor R to connect to one line conductor for single surge
3
Series feed resistor R to connect to the other line conductor for dual surging
4
In the normal single surge equipment test configuration, the unsurged line is grounded. This is shown by the dotted lines in the top drawing of
Figure 33. However, doing this at device test places one terminal pair in parallel with another terminal pair. To check the individual terminal
pairs of the TISP7xxxF3, without any paralleled operation, the unsurged terminal is left unconnected.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Lightning Surge (continued)
ITU-T 10/700 Generator (continued)
VC
2.8 kV
R2
15 Ω
R3
25 Ω
70 A
5/310
SW
R
T
T
R
R
T
G
R1
50 Ω
C1
20 µF
C2
200 nF
70 A
5/310
G
G
T AND G
TEST
R AND G
TEST
R AND T
TEST
10/700 GENERATOR - SINGLE TERMINAL PAIR TEST
95 A
4/250
R4
25 Ω
VC
5.2 kV
95 A
4/250
R2
15 Ω
R3
25 Ω
SW
T
R
C1
20 µF
R1
50 Ω
C2
200 nF
190 A
4/250
G
DUAL
10/700 GENERATOR - DUAL TERMINAL PAIR TEST
T AND G,
R AND G
TEST
Figure 33.
With the generator output open circuit, when SW closes, C discharges through R . The decay time constant will be C R , or 20 x 50 =
1
1
1 1
1000 µs. For the 50 % voltage decay time, the time constant needs to be multiplied by 0.697, giving 0.697 x 1000 = 697 µs which is rounded to
700 µs.
The output rise time is controlled by the time constant of R and C , which is 15 x 200 = 3000 ns or 3 µs. Virtual voltage rise times are given
2
2
by straight line extrapolation through the 30 % and 90 % points of the voltage waveform to zero and 100 %. Mathematically, this is equivalent to
3.24 times the time constant, which gives 3.24 x 3 = 9.73 which is rounded to 10 µs. Thus, the open circuit voltage rises in 10 µs and decays in
700 µs, giving the 10/700 generator its name.
When the overvoltage protector switches, it effectively shorts the generator output via the series 25 Ω resistor. Two short circuit conditions
need to be considered: single output using R only (top circuit of Figure 33) and dual output using R and R (bottom circuit of Figure 33).
3
3
4
For the single test, the series combination of R and R (15 + 25 = 40 Ω) is in shunt with R . This lowers the discharge resistance from 50 Ω to
2
3
1
22.2 Ω, giving a discharge time constant of 444 µs and a 50% current decay time of 309.7 µs, which is rounded to 310 µs.
For the rise time, R and R are in parallel, reducing the effective source resistance from 15 Ω to 9.38 Ω, giving a time constant of 1.88 µs.
2
3
Virtual current rise times are given by straight line extrapolation through the 10 % and 90 % points of the current waveform to zero and 100 %.
Mathematically, this is equivalent to 2.75 times the time constant, which gives 2.75 x 1.88 = 5.15, which is rounded to 5 µs. Thus, the short
circuit current rises in 5 µs and decays in 310 µs, giving the 5/310 wave shape.
The series resistance from C to the output is 40 Ω, giving an output conductance of 25 A/kV. For each 1 kV of capacitor charge voltage, 25 A
1
of output current will result.
For the dual test, the series combination of R plus R and R in parallel (15 + 12.5 = 27.5 Ω) is in shunt with R . This lowers the discharge
2
3
4
1
resistance from 50 Ω to 17.7 Ω, giving a discharge time constant of 355 µs and a 50% current decay time of 247 µs, which is rounded to
250 µs.
For the rise time, R , R and R are in parallel, reducing the effective source resistance from 15 Ω to 6.82 Ω, giving a time constant of 1.36 µs,
2
3
4
which gives a current rise time of 2.75 x 1.36 = 3.75, which is rounded to 4 µs. Thus, the short circuit current rises in 4 µs and decays in 250
µs, giving the 4/250 wave shape.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Lightning Surge (continued)
ITU-T 10/700 Generator (continued)
The series resistance from C to an individual output is 2 x 27.5 = 55 Ω, giving an output conductance of 18 A/kV. For each 1 kV of capacitor
1
charge voltage, 18 A of output current will result.
At 25 °C, these protectors are rated at 70 A for the single terminal pair condition and 95 A for the dual condition (R and G terminals and T and
G terminals). In terms of generator voltage, this gives a maximum generator setting of 70 x 40 = 2.8 kV for the single condition and 2 x 95 x
27.5 = 5.2 kV for the dual condition. The higher generator voltage setting for the dual condition is due to the current waveform decay being
shorter at 250 µs compared to the 310 µs value of the single condition.
Other ITU-T recommendations use the 10/700 generator: K.17 (11/88) “Tests on power-fed repeaters using solid-state devices in order to
check the arrangements for protection from external interference” and K.21(10/96) “Resistibility of subscriber’s terminal to overvoltages and
overcurrents”, K.30 (03/93) “Positive temperature coefficient (PTC) thermistors”.
Several IEC publications use the 10/700 generator; common ones are IEC 6100-4-5 (03/95) “Electromagnetic compatibility (EMC) - Part 4:
Testing and measurement techniques - Section 5: Surge immunity test” and IEC 60950 (04/ 99) “Safety of information technology equipment”.
The IEC 60950 10/700 generator is carried through into other “950” derivatives. Europe is harmonized by CENELEC (Comité Européen de
Normalization Electro-technique) under EN 60950 (included in the Low Voltage Directive, CE mark). US has UL (Underwriters Laboratories)
1950 and Canada CSA (Canadian Standards Authority) C22.2 No. 950.
FCC Part 68 “Connection of terminal equipment to the telephone network” (47 CFR 68) uses the 10/700 generator for Type B surge testing.
Part 68 defines the open circuit voltage wave shape as 9/720 and the short circuit current wave shape as 5/320 for a single output. The current
wave shape in the dual (longitudinal) test condition is not defined, but it can be assumed to be 4/250.
Several VDE publications use the 10/700 generator, for example: VDE 0878 Part 200 (12/92) ”Electromagnetic compatibility of information
technology equipment and telecommunications equipment; Immunity of analogue subscriber equipment”.
1.2/50 Generators
The 1.2/50 open circuit voltage and 8/20 short circuit current combination generator is defined in IEC 61000-4-5 (03/95) “Electromagnetic
compatibility (EMC) - Part 4: Testing and measurement techniques - Section 5: Surge immunity test”. This generator has a fictive output
resistance of 2 Ω, meaning that dividing the open circuit output voltage by the short circuit output current gives a value of 2 Ω(500 A/kV).
The combination generator has three testing configurations; directly applied for testing between equipment a.c. supply connections, applied
via an external 10 Ω resistor for testing between the a.c. supply connections and ground, and applied via an external 40 Ω resistor for testing
all other lines. For unshielded unsymmetrical data or signalling lines, the combination generator is applied via a 40 Ω resistor either between
lines or line to ground. For unshielded symmetrical telecommunication lines, the combination generator is applied to all lines via a resistor of
n x 40 Ω, where n is the number of conductors and the maximum value of external feed resistance is 250 Ω. Thus, for four conductors, n = 4
and the series resistance is 4 x 40 = 160 Ω. For ten conductors, the resistance cannot be 10 x 40 = 400 Ω and must be 250 Ω. The combina-
tion generator is used for short distance lines; long distance lines are tested with the 10/700 generator.
When the combination generator is used with a 40 Ω, or more, external resistor, the current wave shape is not 8/20, but becomes closer to the
open circuit voltage wave shape of 1.2/50. For example, a commercial generator when used with 40 Ω produced an 1.4/50 wave shape.
The wave shapes of 1.2/50 and 8/20 occur in other generators as well. British Telecommunication has a combination generator with 1.2/50
voltage and 8/20 current wave shapes, but it has a fictive resistance of 1 Ω. ITU-T recommendation K.22 “Overvoltage resistibility of equip-
ment connected to an ISDN T/S BUS” (05/95) has a 1.2/50 generator option using only resistive and capacitive elements, Figure 34.
The K.22 generator produces a 1.4/53 open circuit voltage wave. Using 25 Ω output resistors, gives a single short circuit current output wave
shape of 0.8/18 with 26 A/kV and a dual of 0.6/13 with 20 A/kV. These current wave shapes are often rounded to 1/20 and 0.8/14.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Lightning Surge (continued)
1.2/50 Generators (continued)
C4
8 nF
VC
1 kV
R2
13 Ω
C3
8 nF
SW
NOTE: SOME STANDARDS
REPLACE OUTPUT
CAPACITORS WITH
25 RESISTORS
Ω
R1
76 Ω
C1
1 µF
C2
30 nF
K.22 1.2/50 GENERATOR
Figure 34.
There are 8/20 short circuit current defined generators. These are usually very high current, 10 kA or more and are used for testing a.c.
protectors, primary protection modules and some Gas Discharge Tubes.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table in this section shows some common test values.
Manufacturers are being increasingly required to design in protection coordination. This means that each protector is operated at its design
level and currents are diverted through the appropriate protector, e.g. the primary level current through the primary protector and lower levels
of current may be diverted through the secondary or inherent equipment protection. Without coordination, primary level currents could pass
through the equipment only designed to pass secondary level currents. To ensure coordination happens with fixed voltage protectors, some
resistance is normally used between the primary and secondary protection (R1a and R1b, Figure 36). The values given in this data sheet apply
to a 400 V (d.c. sparkover) gas discharge tube primary protector and the appropriate test voltage when the equipment is tested with a primary
protector.
Voltage
Peak Voltage
Peak Current
Current
Waveform
µs
TISP7xxxF3
25 °C Rating
A
Series
Resistance
Ω
Coordination
Resistance
Ω (Min.)
Standard
Setting
V
Va lue
A
Waveform
µs
2500
1000
1500
800
2/10
2 x 500
2 x 100
200
2/10
10/1000
10/160
10/560
5/320 †
5/320 †
4/250
2 x 190
2 x 45
110
50
GR-1089-CORE
12
NA
10/1000
10/160
10/560
9/720 †
(SINGLE)
(DUAL)
0.5/700
10/700
(SINGLE)
(SINGLE)
(DUAL)
6
8
100
FCC Part 68
(March 1998)
NA
1000
1500
1500
1500
1000
1500
4000
4000
25
70
70
2 x 95
70
37.5
2 x 27
37.5
25
37.5
100
0
I 31-24
0.2/310
5/310
5/310
5/310
4/250
0
0
0
17
0
NA
NA
NA
6
70
70
70
2 x 95
ITU-T K.20/K.21
2 x 72
6
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
NA = Not Applicable, primary protection removed or not specified.
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a
temperature range. By using the derated waveform values from the thermal information section, the appropriate series resistor value can be
calculated for ambient temperatures in the range of 0 °C to 70 °C.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Protection Voltage
The protection voltage, (V
), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
(BO)
rate of current rise, di/dt, when the TISP device is clamping the voltage in its breakdown region. The V
®
value under surge conditions can
(BO)
(250 V/ms) value by the normalized increase at the surge’s di/dt. An estimate of the di/dt can
be estimated by multiplying the 50 Hz rate V
be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
(BO)
As an example, the ITU-T recommendation K.21 1.5 kV, 10/700 surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the
initial dv/dt is three times higher, being 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional
series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP
breakdown region.
®
Capacitance
Off-State Capacitance
®
The off-state capacitance of a TISP device is sensitive to junction temperature, T , and the bias voltage, comprising of the dc voltage, V ,
J
D
and the ac voltage, V . All the capacitance values in this data sheet are measured with an ac voltage of 1 Vrms. When V >> V , the capaci-
d
D
d
tance value is independent on the value of V . Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the
d
effective capacitance is strongly dependent on connection inductance. For example, a printed wiring (PW) trace of 10 cm could create a circuit
resonance with the device capacitance in the region of 80 MHz.
Longitudinal Balance
®
Figure 35 shows a three terminal TISP device with its equivalent “delta” capacitance. Each capacitance, C , C
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
and C , is the true
TR
TG RG
then C
> C
. Capacitance C
is equivalent to a capacitance of C
in parallel with the capacitive difference of (C ). The line
-C
TG
RG
TG
capacitive unbalance is due to (CTG -C
RG
TG RG
) and the capacitance shunting the line is C
+C /2 .
TR RG
RG
Figure 35.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP7xxxF3 (MV, HV) Overvoltage Protector Series
Typical Circuits
TIP
WIRE
F1a
F1b
R1a
Th3
Th1
GDTa
GDTb
PROTECTED
EQUIPMENT
Th2
R1b
AI7XBP
RING
WIRE
TISP7xxxF3
Figure 36. Protection Module
R1a
R1b
Th3
SIGNAL
Th1
Th2
AI7XBM
TISP7150F3
D.C.
Figure 37. ISDN Protection
OVER-
CURRENT
PROTECTION
SLIC
PROTECTION
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
TIP
WIRE
S3a
R1a
Th4
Th5
Th3
S1a
S2a
COORDI-
NATION
RESISTANCE
Th1
Th2
SLIC
R1b
RING
WIRE
S3b
TISP7xxxF3
TISP6xxxx,
TISPPBLx,
1/2TISP6NTP2
S1b
S2b
VBAT
C1
220 nF
TEST
EQUIP-
MENT
RING
GENERATOR
AI7XBN
Figure 38. Line Card Ring/Test Protection
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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