TISP4350T3BJ [BOURNS]
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS; 双向晶闸管过电压保护
| 型号： | TISP4350T3BJ |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 文件： | 总9页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4290T3BJ, TISP4350T3BJ
T
N
A
I
L
P
S
M
N
E
O
O
L
I
C
B
S
S
A
R
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
H
L
E
I
o
V
A
V
*R
A
TISP4xx0T3BJ Overvoltage Protector Series
MODEM Protection against:
SMB Package (Top View)
-TIA/EIA-IS-968 Type A & B surge
-UL 60950, Clause 6. power cross
-CSA 22.2 No. 60950, Clause 6. power cross
R
1
2 T
Low Differential Capacitance .................................. 23 pF typ.
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
MDXXCM
-Low Voltage Overshoot Under Surge
VDRM
V(BO)
Device Symbol
Device
V
V
T
‘4290T3
‘4350T3
220
275
290
350
Rated for International Surge Wave Shapes
IPPSM
Wave Shape
Standard
SD4XAA
A
R
2/10
8/20
GR-1089-CORE
IEC 61000-4-5
TIA/EIA-IS-968
250
250
150
10/160
10/700
9/720
ITU-T K.20/.21/.45 120
.............................................. UL Recognized Component
TIA/EIA-IS-968
TIA/EIA-IS-968
GR-1089-CORE
120
100
80
10/560
10/1000
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities.
After a TIA/EIA-IS-968 (replaces FCC Part 68) Type A surge the equipment can be faulty, provided that the fault mode causes the equipment to
be unusable. There are two wave shapes used: 10/160 for longitudinal surges and 10/560 for metallic surges. For modems with a
TISP4350T3BJ connected between the Ring and Tip wires (and without overvoltage protection to ground), the longitudinal 10/160 applied to
both Ring and Tip will not activate the TISP4350T3BJ, giving an operational pass. The metallic 10/560 is applied between Ring and Tip wires
and will operate the TISP4350T3BJ. As the TISP4350T3BJ has a current rating of 100 A, 10/560 it will survive the FCC Part Type A 100 A,
10/560 metallic surge giving an operational pass.
How to Order
For Standard
For Lead Free
Termination Finish Termination Finish
Device
Package
Carrier
Order As
Order As
TISP4290T3BJ
TISP4350T3BJ
TISP4290T3BJR
TISP4350T3BJR
TISP4290T3BJR-S
TISP4350T3BJR-S
BJ (SMB/DO-214AA J-Bend)
R (Embossed Tape Reeled)
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0T3BJ Overvoltage Protector Series
Description (Continued)
After a TIA/EIA-IS-968 Type B surge the equipment must be operational. As the TISP4350T3BJ has a current rating of 120 A, it will survive both
Type B surges, metallic (25 A, 9/720) and longitudinal (37.5 A, 9/720), giving an operational pass to FCC Part 68 Type B surges.
The TIA/EIA-IS-968 B type ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V. The TISP4350T3BJ will
not clip the B type ringing voltage as it has a high impedance up to 275 V.
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
’4290T3
’4350T3
±220
±275
Repetitive peak off-state voltage (see Note 1)
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
250
250
150
120
120
100
80
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 voltage wave shape)
5/310 (ITU-T K.44, 10/700 voltage wave shape used in K.20/45/21)
5/320 (TIA/EIA-IS-968 (replaces FCC Part68), 9/720 voltage wave shape)
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
IPPSM
A
25
30
20 ms (50 Hz), full sine wave
16.7 ms (60 Hz), full sine wave
1000 s 50 Hz/60 Hz
ITSM
A
2.1
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A
Junction temperature
diT/dt
TJ
500
A/µs
°C
-40 to +150
-65 to +150
Storage temperature range
T
°C
stg
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.
Overload Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
See Figure 4
for current
versus time
Peak overload on-state current, a.c. power line cross tests UL 60950 (see Note 4)
IT(OV)M
A rms
NOTE 4: These electrical stress levels may damage the device silicon chip. After test, the pass criterion is either that the device is
functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected
as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0T3BJ Overvoltage Protector Series
Recommended Operating Conditions
Component
Min
Typ
Max
Unit
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 type A surge survival
(T-G or R-G connection)
2.5
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 type A surge survival
0
0
5
0
6
Ω
RS
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 type B surge survival
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min
Typ
Max
Unit
TA = 25 °C
TA = 85 °C
±5
±10
IDRM Repetitive peak off-
state current
VD = VDRM
µA
‘4290T3
‘4350T3
±290
±350
V
AC breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
V
(BO)
I(BO) AC breakover current
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
±0.8
±3
A
V
V
On-state voltage
Holding current
T
IH
dv/dt
ID
IT = ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85 VDRM
VD = ±50 V
±0.15
±5
A
kV/µs
µA
Critical rate of rise of
off-state voltage
Off-state current
TA = 85 °C
±10
54
48
43
20
16
65
58
52
24
19
f = 1 MHz, V = 1 V rms, VD = 0,
d
f = 1 MHz, V = 1 V rms, VD = -1 V
d
f = 1 MHz, V = 1 V rms, VD = -2 V
Coff Off-state capacitance
pF
d
f = 1 MHz, V = 1 V rms, VD = -50 V
d
f = 1 MHz, V = 1 V rms, VD = -100 V
d
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB,
TA = 25 °C, (see Note 5)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000)
Min
Typ
Max
Unit
115
°C/W
RθJA Junction to free air thermal resistance
52
,
TA = 25 °C
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0T3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
IPPSM
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
IDRM
ID
VDRM
VD
-v
+v
ID
VD
VDRM
IDRM
IH
I(BO)
VT
V(BO)
IT
ITSM
I
Quadrant III
Switching
IPPSM
Characteristic
-i
PM4XAG
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0T3BJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE
vs
TYPICAL CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
OFF-STATE VOLTAGE
TC4TAB
TC4TAA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0.9
TJ = 25 °C
0.8
0.7
Vd = 1 Vrms
0.6
0.5
V = 10 mV rms, 1 MH
z
d
0.4
0.3
Vd = 1 V rms, 1 MHz
0.2
0.5
1
2
3
4
5 1 7
0
20 30 40 50
1
2
3
5
10
20 30 50
100150
VD - Off-state Voltage - V
VD — Off-state Voltage - V
Figure 2.
Figure 3.
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0T3BJ Overvoltage Protector Series
Rating and Thermal Information
PEAK OVERLOAD ON-STATE CURRENT
vs
CURRENT DURATION
TI4MAM
40
35
DEVICE WILL
30
CARRY CURRENT
OF TESTS 1 THRU 5
CLAUSE 6.4, UL 60950,
FOR FULLTEST TIME
25
100 A2s
40 A
20
15
7 A
10
9
8
7
6
5
4
3.5
2.2 A
WIRING
3
SIMULATOR
2.5
2
0·01
0·1
1
10
100
1000
t - Current Duration - s
Figure 4. Peak Overload On-state Current against Duration
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0T3BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
2.54
(.100)
SMB Land Pattern
2.40
(.095)
2.16
(.085)
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MDXXBID
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
Symbolization Code
4290T3
TISP4290T3BJ
TISP4350T3BJ
4350T3
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Package
Carrier
Standard Quantity
SMB
Embossed Tape Reel Pack
3000
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0T3BJ Overvoltage Protector Series
MECHANICAL DATA
SMB (DO-214AA) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB02
4.06 - 4.57
(.160 - .180)
3.30 - 3.94
(.130 - .155)
1
2
Index
Mark
2.00 - 2.40
(.079 - .094)
0.10 - 0.20
(.004 - .008)
1.90 - 2.10
(.075 - .083)
1.96 - 2.32
(.077 - .091)
0.76 - 1.52
(.030 - .060)
5.21 - 5.59
(.205 - .220)
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MDXXBHG
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xx0T3BJ Overvoltage Protector Series
MECHANICAL DATA
Tape Dimensions
SMB02 Package Single-Sprocket Tape
3.90 - 4.10
(.154 - .161 )
1.50
(.059)
MIN.
ø
1.95 - 2.05
(.077 - .081)
1.55 -
1.65
ø(.061 - .065 )
0.40
(.016)
MAX .
1.65 -
1.85
(.065 - .073 )
5.45 -
(.215 - .219 )
5.55
11.70 -
12.30
(.461 - .484 )
8.20
(.323)
MAX .
e
0 MIN.
7.90 - 8.10
(.311 - .319 )
Cover
Ta pe
Carrier Tape
Embossment
Direction of Feed
4.50
(.177)
MAX .
Maximium component
rotation
20 °
Ty pical component
cavity center line
Typical component
center line
MILLIMETERS
(INCHES)
DIMENSIONS ARE:
MDXXBHH
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in)
MAX. so that the component cannot rotate more than 20 ° within the determined cavity.
B. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter:
330 mm ± 3.0 mm (12.99 in ± .118 in)
Reel hub diameter 75 mm (2.95 in) MIN.
Reel axial hole:
13.0 mm ± 0.5 mm (.512 in ± .020 in)
C. 3000 devices are on a reel.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
DECEMBER 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关型号：
©2020 ICPDF网 联系我们和版权申明