CHF8838CNF_08 [BOURNS]
150 W Power RF Flanged Chip Termination; 150 W功率RF法兰片上端接
| 型号： | CHF8838CNF_08 |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | 150 W Power RF Flanged Chip Termination |
| 文件： | 总1页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
Applications
■ High power RF transmission
■ DC to 3.0 GHz
■ Flanged model
■ Low VSWR
■ Aluminium Nitride ceramic
CHF8838xNF Series 150 W Power RF Flanged Chip Termination
General Specifications
Characteristic Curve
Substrate...........................................ALN
Resistive Film...........................Thick Film
Tab.......................................................Ag
Tab Attachment
Version C .................Brazed with epoxy
encapsulation
Version G.....Brazed with alumina cover
Mounting Flange ..........Cu plated with Ni
Resistance........................................50 Ω
Tolerance......................................... 5 ꢀ
Packaging.............................60 pcs./tray
160
140
120
100
80
60
40
20
0
Absolute Ratings
Power.............................................150 W
Frequency ...................................3.0 GHz
VSWR
-55
0
100
150
Heat Sink Temperature (°C)
Version C .........................1.2 maximum
Version G .........................1.1 maximum
Product Dimensions
22.1
(0.870)
14.22
(0.560)
VERSION C:
2.77
(0.1089)
6.35
(0.25)
1.57
(0.062)
VERSION G:
3.10
(0.122)
9.53
(0.375)
VERSION C:
3.5
(0.14)
DIA.
6.5
(0.256)
MILLIMETERS
DIMENSIONS =
VERSION G:
4.3
(INCHES)
DIA.
(0.17)
1.5
(0.059)
0.1
(0.004)
2.57
(0.101)
How To Order
CHF 8838 C N F 500 L
Model
Size
Asia-Pacific:
Version (See Product Dimensions)
C = Without Alumina Cover
G = With Alumina Cover
Tel: +886-2 2562-4117
Fax: +886-2 2562-4116
Europe:
Tel: +41-41 768 5555
Fax: +41-41 768 5510
The Americas:
Tel: +1-951 781-5500
Fax: +1-951 781-5700
www.bourns.com
Substrate
Mount
F = Flange
Value
500 = 50 Ohms
Function
L = Termination
*RoHS Directive 2002/95/EC Jan 27 2003, including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
REV. 09/08
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