BDW54B-S [BOURNS]
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3;![BDW54B-S](http://pdffile.icpdf.com/pdf2/p00306/img/icpdf/BDW54B-S_1845315_icpdf.jpg)
型号: | BDW54B-S |
厂家: | ![]() |
描述: | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3 局域网 开关 晶体管 |
文件: | 总4页 (文件大小:102K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDW53, BDW53A, BDW53B, BDW53C and
BDW53D
TO-220 PACKAGE
(TOP VIEW)
●
●
●
40 W at 25°C Case Temperature
4 A Continuous Collector Current
1
2
3
B
C
E
Minimum h of 750 at 3V, 1.5 A
FE
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BDW54
-45
BDW54A
BDW54B
BDW
BDW54
DW54
-60
Collector-base voltage (IE = 0)
VCBO
-80
V
-100
-120
-45
BDW54A
DW54B
BDW54C
BDW54D
-60
Collector-emitter voltage (IB = 0) (see Note 1)
VCEO
-80
V
-100
-120
Emitter-base voltage
VEBO
IC
-5
V
A
Continuous collector current
-4
Continuous base current
IB
-50
40
mA
W
Continuous device dissipation at (low°C ase temperature (see Note 2)
Continuous device dissipatio(or ow) °C free air temperature (see Note 3)
Unclamped inductive load enesee Note 4)
Operating junction temperature range
Ptot
Ptot
2
W
2
½LIC
25
mJ
°C
°C
°C
Tj
Tstg
TA
-65 to +150
-65 to +150
-65 to +150
Operating temperature range
Operating free-air temperature range
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BDW54
-45
-60
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
Collector-emitter
V(BR)CEO
IC
=
-30 mA
IB = 0
(see Note 5)
-80
V
breakdown voltage
-100
-120
VCE
VCE
VCE
VCE
VCE
VCB
VCB
VCB
=
-30 V
-30 V
-40 V
-50 V
-60 V
-45 V
-60 V
-80 V
I
I
I
I
I
B = 0
B = 0
B = 0
B = 0
B = 0
-0.5
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-0.2
-5
=
=
=
=
=
=
=
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
Collector-emitter
cut-off current
ICEO
mA
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
V
CB = -100 V
CB = -120 V
Collector cut-off
current
V
ICBO
mA
mA
VCB
VCB
VCB
=
=
=
-45 V
-60 V
-80 V
T
T
T
T
T
C = 150°C
C = 150°C
C = 150°C
C = 150°C
C = 150°C
BDW54A
W54B
BD4C
BDWD
-5
-5
V
CB = -100 V
CB = -120 V
-5
V
-5
Emitter cut-off
current
IEBO
hFE
VEB
=
-5 V
IC = 0
-2
Forward current
transfer ratio
Base-emitter
voltage
VCE
VCE
=
=
-3 V
-3 V
IC = -1.5
750
100
20000
No5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
IC
=
-4
VBE(on)
VCE(sat)
VEC
VCE
=
-3
A
-2.5
V
V
V
Collector-emitter
saturation voltage
Parallel diode
forward voltage
I
IB
=
-mA
-4A
IC -1.5 A
-2.5
-4
IC
=
-4 A
E
=
-4 A
IB = 0
-3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RθJC
RθJA
3.125
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = -2 A
BE(off) = 5 V
IB(on) = -8 mA
IB(off) = 8 mA
1
µs
µs
V
RL = 15 Ω
tp = 20 µs, dc ≤ 2%
4.5
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
2
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS115AB
TCS115AD
20000
10000
-2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
TC = -40°C
TC = 25°C
TC = 100°C
-1·5
-1·0
1000
-0·5
TC = -40°C
TC = 25°C
TC = 100°C
VCE
=
-3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
0
-0·5
-1·0
-5·0
-1·0
-5·0
IC - Collector Current - A
C - Collector Current - A
Figure 1.
Figure 2.
ASE-EMTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS115AC
-3·
-2·5
-2·0
-1·5
-1·0
-0·5
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-1·0
-5·0
IC - Collector Current - A
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS115AC
-10
-1·0
-0·1
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
-0.01
-1·0
-10
-10
-0
VCE - Collector-Emer VoltaV
Fige 4.
TERMANFRMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AB
0
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
4
相关型号:
![](http://pdffile.icpdf.com/pdf1/p00116/img/page/BDW54_632191_files/BDW54_632191_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00116/img/page/BDW54_632191_files/BDW54_632191_2.jpg)
BDW54C-S
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3
BOURNS
©2020 ICPDF网 联系我们和版权申明