BD540C-S [BOURNS]
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3;
| 型号： | BD540C-S |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, FM-3 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD539 Series
TO-220 PACKAGE
(TOP VIEW)
45 W at 25°C Case Temperature
5 A Continuous Collector Current
Customer-Specified Selections Available
1
2
3
B
C
E
This series IS OBSOLETE AND
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BD540
-40
BD540A
BD540B
BD54
BD540
-60
Collector-base voltage (IE = 0)
VCBO
V
-80
-100
-40
D540A
BD540B
D540C
-60
Collector-emitter voltage (IB = 0) (see Note 1)
VCEO
V
-80
-100
Emitter-base voltage
VEBO
IC
-5
V
Continuous collector current
-5
45
A
Continuous device dissipation at (or below) 25°C ce tmpere (ee Note 2)
Continuous device dissipation at (or below) 2free ir tperature (see Note 3)
Operating free air temperature range
Ptot
Ptot
TA
W
W
°C
°C
°C
°C
2
-65 to +150
-65 to +150
-65 to +150
260
Operating junction temperaturra
Tj
Storage temperature range
Tstg
TL
Lead temperature 3.2 mm from se fr 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BD540
-40
-60
Collector-emitter
BD540A
BD540B
BD540C
BD540
V(BR)CEO
IC
=
-30 mA
IB = 0
V
breakdown voltage
-80
(see Note 4)
-100
VCE
VCE
VCE
=
=
=
-40 V
-60 V
-80 V
VBE = 0
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
Collector-emitter
cut-off current
VBE = 0
VBE = 0
VBE = 0
BD540A
BD540B
BD540C
BD540/540A
BD540B/540C
ICES
mA
VCE = -100 V
Collector cut-off
current
VCE
VCE
=
=
-30 V
-60 V
IB = 0
B = 0
ICEO
IEBO
mA
mA
I
Emitter cut-off
current
VEB
=
-5 V
IC = 0
-1
VCE
VCE
VCE
=
=
=
-4 V
-4 V
-4 V
IC = -0.5 A
40
30
12
Forward current
transfer ratio
hFE
IC
IC
IC
IC
IC
=
=
=
=
=
-1 A
-3 A
- 1A
-3 A
- 5A
(see Notes 4 and 5)
(see Notes 4 and 5)
I
B = -125 mA
B = -375 mA
-0.25
-0.8
Collector-emitter
saturation voltage
VCE(sat)
I
V
V
IB
=
-1 A
-1.5
Base-emitter
VBE
hfe
VCE
VCE
VCE
=
=
=
-4 V
IC
=
-3 A
(see Noteand 5)
= 1 kHz
-1.25
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
-10 V
-10 V
IC = -0.5 A
IC = -0.5 A
20
3
|hfe|
f = MHz
NOTES: 4. These parameters must be measured using puse tniqutp = 0 µs, duty cycle ≤ 2%.
5. These parameters must be measured usinvoltage-sing ntacts, separate from the current carrying contacts.
thermal characteristics
RAETER
Junction to case therresince
Junction to free air therresistance
MIN
MIN
TYP
MAX
UNIT
RθJC
RθJA
2.78
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = -1 A
BE(off) = 4.3 V
IB(on) = -0.1 A
IB(off) = 0.1 A
0.3
1
µs
µs
V
RL = 30 Ω
tp = 20 µs, dc ≤ 2%
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
2
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
BASE CURRENT
TCS632AH
TCS632AB
1000
100
10
-10
VCE = -4 V
TC = 25°C
TC = 80°C
tp = 300 µs, duty cycle < 2%
-1·0
-0·1
IC = -100 mA
IC = -300 mA
IC = -1 A
IC = -A
-0·01
-0·01
-0·1
-1·0
-10
-1
-10
-100
-1000
IC - Collector Current - A
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS632AC
-1
VCE = -4 V
TC = 25°C
-0·9
-0·8
-0·7
-0·6
-0·5
-0·01
-0·1
-1
-10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS632AE
-10
-1·0
-0·1
BD540
BD540A
BD540B
BD540C
-0·01
-1·0
-10
-10
0
VCE - Collector-Emier Volta- V
Figre 4
THERMAINFRMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AC
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
4
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