BD239 [BOURNS]
NPN SILICON POWER TRANSISTORS; NPN硅功率晶体管
| 型号： | BD239 |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | NPN SILICON POWER TRANSISTORS |
| 文件： | 总5页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD240 Series
TO-220 PACKAGE
(TOP VIEW)
●
●
●
●
30 W at 25°C Case Temperature
2 A Continuous Collector Current
4 A Peak Collector Current
1
2
3
B
C
E
Customer-Specified Selections Available
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
BD239
55
BD239A
BD239B
BD239C
BD239
70
Collector-emitter voltage (RBE = 100 Ω)
VCER
V
90
115
45
BD239A
BD239B
BD239C
60
Collector-emitter voltage (IC = 30 mA)
VCEO
V
80
100
Emitter-base voltage
VEBO
IC
ICM
IB
5
V
A
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
2
4
A
0.6
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Ptot
Ptot
30
W
W
mJ
°C
°C
°C
2
½LIC
32
2
Operating junction temperature range
Tj
Tstg
TL
-65 to +150
-65 to +150
250
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
V
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BD239
45
60
Collector-emitter
BD239A
BD239B
BD239C
BD239
V(BR)CEO
IC
=
30 mA
IB = 0
V
breakdown voltage
80
(see Note 5)
100
VCE
VCE
VCE
=
=
=
55 V
70 V
90 V
V
BE = 0
0.2
0.2
0.2
0.2
0.3
0.3
Collector-emitter
cut-off current
VBE = 0
VBE = 0
VBE = 0
BD239A
BD239B
BD239C
BD239/239A
BD239B/239C
ICES
mA
VCE = 115 V
Collector cut-off
current
VCE
VCE
=
=
30 V
60 V
IB = 0
ICEO
IEBO
hFE
mA
IB = 0
Emitter cut-off
current
VEB
=
5 V
IC = 0
1
µA
Forward current
transfer ratio
VCE
VCE
=
=
4 V
4 V
IC = 0.2 A
40
15
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
IC
=
1 A
Collector-emitter
saturation voltage
Base-emitter
VCE(sat)
VBE
IB
=
0.2 A
4 V
IC
=
1 A
0.7
1.3
V
V
VCE
VCE
VCE
=
=
=
IC
=
1 A
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
hfe
10 V
10 V
IC = 0.2 A
IC = 0.2 A
20
3
|hfe|
f = 1 MHz
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RθJC
RθJA
4.17
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = 200 mA
BE(off) = -3.4 V
IB(on) = 20 mA
I
B(off) = -20 mA
0.3
0.8
µs
µs
V
RL = 150 Ω
tp = 20 µs, dc ≤ 2%
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
2
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
BASE CURRENT
TCS631AG
TCS631AE
1000
100
10
10
VCE = 4 V
TC = 25°C
TC = 80°C
IC = 100 mA
IC = 300 mA
IC = 1 A
tp = 300 µs, duty cycle < 2%
1·0
0·1
0·01
0·01
0·1
1·0
0·1
1·0
10
100
1000
IC - Collector Current - A
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AF
1·0
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS631AE
100
10
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
1·0
0·1
BD239
BD239A
BD239B
BD239C
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AB
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
4
BD239, BD239A, BD239B, BD239C
NPN SILICON POWER TRANSISTORS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
10,4
10,0
1,32
1,23
3,96
3,71
ø
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
12,7
1,70
1,07
0,97
0,61
1
2
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
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