TIP121 [BOCA]
Power Darlingtons for Linear and Switching Applications; 达林顿功率线性和开关应用
| 型号： | TIP121 |
| 厂家： | 
BOCA SEMICONDUCTOR CORPORATION |
| 描述： | Power Darlingtons for Linear and Switching Applications |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TO-220 Plastic Package
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
Boca Semiconductor Corp.
TIP120, 121, 122
TIP125, 126, 127
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
PIN CONFIGURATION
1. BASE
4
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
C
E
DIM
MIN.
MAX.
B
F
A
B
C
D
E
14.42
9.63
3.56
16.51
10.67
4.83
0.90
1.40
3.88
2.79
3.43
0.56
14.73
4.07
2.92
31.24
1.15
3.75
2.29
2.54
1
2
3
F
G
H
J
K
L
M
N
O
12.70
2.80
2.03
J
D
G
M
DEG 7
ABSOLUTE MAXIMUM RATINGS
120 121 122
125 126 127
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
V
V
max. 60
max. 60
max.
80 100
80 100
5.0
V
V
A
CBO
CEO
I
C
Total power dissipation up to T = 25°C
Junction temperature
P
T
j
max.
max.
65
150
W
°C
C
tot
Collector-emitter saturation voltage
I
= 3 A; I = 12 mA
V
CEsat
max.
min.
2.0
1.0
V
C
B
D.C. current gain
I
C
= 0.5 A; V
= 3 V
h
FE
CE
RATINGS (at T =25°C unless otherwise specified)
120 121 122
125 126 127
A
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
V
CBO
V
CEO
V
EBO
max. 60
max. 60
max.
80 100
80 100
5.0
V
V
V
http://www.bocasemi.com
page: 1
Boca Semiconductor Corp.
BSC
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
Collector current
Collector current (peak)
Base current
Total power dissipation up to T = 25°C
Derate above 25°C
I
I
I
max.
max.
max.
max.
max
max.
max
max.
5.0
8
120
65
0.52
A
A
mA
W
W/
W
W/
°C
C
CM
B
P
C
tot
tot
°
C
Total power dissipation up to T = 25°C
P
2
A
Derate above 25°C
Junction temperature
Storage temperature
0.016
150
–65 to +150
°
C
T
T
j
ºC
stg
THERMAL RESISTANCE
From junction to ambient
From junction to case
R
R
62.5
1.92
°
°
C/W
C/W
th j–a
th j–c
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
120 121 122
125 126 127
Collector cutoff current
I
= 0; V = 60 V
I
I
I
I
I
I
max. 0.2
–
0.2
–
–
0.5
–
–
–
mA
mA
E
CB
= 0; V = 80 V
CBO
CBO
CBO
CEO
CEO
CEO
I
max.
max.
–
–
E
CB
I
= 0; V
= 0; V
= 0; V
= 0; V
= 100 V
= 30V
= 40V
= 50V
0.2 mA
–
–
E
CB
CE
CE
CE
I
max. 0.5
mA
mA
B
I
max.
max.
–
–
B
I
B
0.5 mA
Emitter cut-off current
I
= 0; V = 5 V
I
max.
2.0
mA
C
EB
Breakdown voltages
= 100 mA; I = 0
EBO
I
V
V
V
*
min. 60
min. 60
min.
80 100
80 100
5.0
V
V
V
C
B
CEO(sus)
CBO
I
= 1 mA; I = 0
C
E
I
E
= 1 mA; I = 0
C
EBO
Saturation voltages
I
I
C
= 3.0 A; I = 12 mA
V
CEsat
V
CEsat
*
*
max.
max.
2.0
4.0
V
V
C
B
= 5.0 A; I = 20 mA
B
Base-emitter on voltage
I
= 3A; V = 3V
V
*
max.
2.5
V
C
CE
D.C. current gain
= 0.5A; V
BE(on)
I
= 3V
CE
= 3A; V = 3V
h *
FE
min.
min.
1.0
1.0
C
I
C
CE
Small signal current gain
= 3A; V = 4V; f = 1 MHz
I
C
| h |
fe
min.
4.0
CE
Output capacitance at f = 0.1 MHz
I
E
= 0; V
= 10V
PNP
NPN
C
C
max.
max.
300
200
pF
pF
CB
o
o
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
http://www.bocasemi.com
page: 2
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