2SC3356W [BILIN]

Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
2SC3356W
型号: 2SC3356W
厂家: GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED    GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED
描述:

Silicon Epitaxial Planar Transistor
硅外延平面晶体管

晶体 晶体管
文件: 总4页 (文件大小:165K)
下载:  下载PDF数据表文档文件

2SC3356-X-AE3-R

HIGH FREQUENCY LOW NOISE AMPLIFIER

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25 UTC-IC

2SC3357

NPN Silicon RF Transistor

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108 KEXIN

2SC3357

isc Silicon NPN RF Transistor

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301 ISC

2SC3357

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD

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531 RENESAS

2SC3357

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

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2396 NEC

2SC3357

Low Noise and High Gain High power gain : MAG = 10 dB TYP. IC = 40 mA, f = 1 GHz

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241 TYSEMI

2SC3357

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3

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42 RENESAS

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400 ETC

2SC3357-A

暂无描述

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2 NEC

2SC3357-A

2SC3357-A

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2 RENESAS

2SC3357-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3

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3 NEC

2SC3357-E-HF

NPN Transistors

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0 KEXIN

2SC3357-F-HF

NPN Transistors

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0 KEXIN

2SC3357-HF

NPN Transistors

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0 KEXIN

2SC3357-H-HF

NPN Transistors

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0 KEXIN