BL-M20B571DUG [BETLUX]
LED DOT MATRIX; LED点阵
| 型号： | BL-M20B571DUG |
| 厂家： | 
BETLUX ELECTRONICS |
| 描述： | LED DOT MATRIX |
| 文件： | 总3页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LED DOT MATRIX
BL-M20A571XX
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Features:
53.10mm (2.0”) Φ5.0 dot matrix LED display, BI-COLOR
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Electrical-optical characteristics: (Ta=25 ) (Test Condition: IF=20mA)
Part No
VF
Unit:V
Chip
Iv
Emitted Color
Row Cathode
Column Anode
Row Anode
Column Cathode
λP
(nm)
Material
TYP.(mcd)
Typ
Max
Super Red
Green
AlGaInP
660
570
635
2.10
2.20
2.10
2.50
2.50
2.50
BL-M20A571SG-XX
BL-M20A571EG-XX
BL-M20B571SG-XX
BL-M20B571EG-XX
120
GaP/GaP
95
90
GaAsP/Ga
P
Orange
Green
Ultra Red
GaP/GaP
AlGaInP
AlGaInP
AlGaInP
AlGaInP
570
660
574
630
574
2.20
2.10
2.20
2.10
2.20
2.50
2.50
2.50
2.50
2.50
95
BL-M20A571DUG-XX BL-M20B571DUG-XX
BL-M20A571UEUG-X BL-M20B571UEUG-X
140
170
130
170
Ultra Green
Ultra Orange
Ultra Green
X
X
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-XX: Surface / Lens color
0
1
2
3
4
5
Number
Ref Surface Color
Epoxy Color
White
Water
clear
Black
White
diffused
Gray
Red
Diffused
Red
Green
Diffused
Green
Yellow
Diffused
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Absolute maximum ratings (Ta=25°C)
U
nit
mA
Parameter
S
G
E
D
UG
UE
30
75
5
30
80
5
30
80
5
30
75
5
30
30
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
mW
V
75
5
65
5
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
mA
150
150
150
150
150
150
-40 to +80
-40 to +85
Lead Soldering Temperature
TSOL
Max.260±5
(1.6mm from the base of the epoxy bulb)
for 3 sec Max.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 1 of 3
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LED DOT MATRIX
BL-M20A571XX
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 2 of 3
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LED DOT MATRIX
BL-M20A571XX
Typical electrical-optical characteristics curves:
(A)
(B)
(C)
(D)
(2) (3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
1.0
0.5
0
350
400
450
500
550
600
650
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p)
700
750
800
850
900
950
1000
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
1
6 4 5
2
3
50
40
30
20
10
0
4.0
50
1
1
40
3.0
2.0
6
2,4,8,A
30
5
3
5
B
20
10
0
1.0
0
1.2
1.6
2.0
2.4
2.6 3.0
20
40
60
80
100
20
40
60
80
)
100
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
FORWARD CURRENT (mA)
AMBIENT TEMPERATURE Ta(
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
300KHz
1KHz 100KHz
3KHz
10KHz
3KHz
10KHz 1KHz
300Hz
100Hz
30KHz
100KHz
F-REFRESH RATE
10
10
9
8
7
9
8
7
6
5
4
3
3
2
1
5
6
5
4
2
1
3
4
3
0.5
0.2
0.1
2
1
2
1
-30 -20
-10
0
10
20
30
40
50
60
70
1
10
100
1000
10,000
10,000
1
10
100
1000
AMBIENT TEMPERATURE Ta(
)
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
tp-PULSE DURATION uS
(5)
NOTE:25 free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
Page 3 of 3
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